Abstract: A device may include a substrate. A device may include a first semiconductor region of a first conductivity type having a first doping concentration, the first semiconductor region including a base surface, a buffer region positioned between the substrate and the first semiconductor region. A device may include a second semiconductor region of the first conductivity type and having a second doping concentration that is less than the first doping concentration, the second semiconductor region positioned over the base surface of the first semiconductor region. A device may include at least one first device terminal positioned over the base surface of the first semiconductor region. A device may include a third semiconductor region of a second conductivity type disposed over at least one sidewall of the second semiconductor region.

Abstract: Template-based tuning is performed on a generative machine learning model where a shared template is used to tune the generative machine learning model across multiple natural language tasks. When a natural language request to perform a natural language task is received, portions of a shared template to complete are identified as part of generating a prompt. The generative machine learning model is instructed according to the generated prompt and a response to the request is returned based on a result of the generative machine learning model.

Abstract: The present disclosure provides a display substrate and a display device. The display substrate comprises: a base substrate having a first display area and a second display area located on at least one side of the first display area, the transmittance of the first display area being greater than that of the second display area; a plurality of light-emitting components arranged in an array on the base substrate, the plurality of light-emitting components comprising a plurality of first light-emitting components located in the first display area and a plurality of second light-emitting components located in the second display area, the gap between each two adjacent first light-emitting components being greater than the gap between each two adjacent second light-emitting components.

Abstract: A power tool, including: a housing, extending in a longitudinal direction; and a fan, a motor, and a circuit board that are received in the housing. The housing defines an air outlet, a first air inlet, and a second air inlet. The first air inlet is adjacent to the motor, and the second air inlet is adjacent to the circuit board; the first air inlet is disposed between the air outlet and the second air inlet. The power tool includes a first heat dissipation air path that flows through the motor and a second heat dissipation air path that flows through the circuit board. The motor includes an output shaft extending along the longitudinal direction. The output shaft is connected to the fan; the air outlet, the fan, the first air inlet, and the second air inlet are arranged sequentially in an axis direction of the output shaft.

Abstract: A diode includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge; a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the semiconductor region, the material of the second conductivity type having a net-charge in a depletion region that is substantially equal to the net-charge of the at least one two-dimensional channel in the semiconductor region when the diode is under reverse bias; an anode material in contact with at least a portion of the at least one two-dimensional channel and at least a portion of the material of the second conductivity type; and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: Provided are an in situ bifunctional catalyst for deep desulfurization and increasing octane number of gasoline, and its preparation method and application. The bifunctional catalyst includes a modified catalyst carrier and a loaded active metal, where the modified catalyst carrier is a composite carrier prepared through mixing ?-Al2O3 and an acidic molecular sieve by a binder and calcining. When the bifunctional catalyst provided by the present application is used for hydrodesulfurization of gasolines, deep desulfurization, olefin reduction and octane number preservation can be realized simultaneously, thereby obtaining a high-quality oil product.

Abstract: A method for establishing a biological model on joint toxicity of Caenorhabditis elegans and an application thereof are provided. The method for establishing the biological model includes adding the L1-stage Caenorhabditis elegans to a mixed system of working solution of mycotoxins containing tenuazonic acid and penicillin, K-medium solution and E. coli OP50 to obtain L1-stage Caenorhabditis elegans. The biological model indicates that TeA and PAT have a synergistic effect on the growth, development and reproductive ability of Caenorhabditis elegans, and their toxicity mechanism is related to inducing nematodes and stimulating transcriptional factors of Daf-16 genes. The biological model and detection method are simple to operate and its test period is short.

Abstract: A device may include a substrate of a first conductivity type, the first conductivity type being one of a n-type conductivity and a p-type conductivity, the substrate having a base surface. A device may include a first terminal coupled with the base surface of the substrate, a first semiconductor region disposed over the substrate, the substrate positioned between the first semiconductor region and the first terminal, the first semiconductor region including a top surface, which defines a plurality of trenches having sidewalls, the plurality of trenches separated by a plurality of pillars, the first semiconductor region formed of a first material with the first conductivity type, a second semiconductor region disposed over the sidewalls of the first semiconductor region to form a superjunction with the first semiconductor region, the second semiconductor region formed of a second material different from the first material and having a second conductivity type.

Abstract: Provided are a bifunctional catalyst for deep desulfurization and gasoline quality improvement and a preparation method therefore and a use thereof. The bifunctional catalyst includes a modified catalyst and a loaded active metal, where the modified catalyst carrier is a ?-Al2O3 modified with a rare earth element, or the modified catalyst carrier is a composite carrier prepared by mixing and calcinating ?-Al2O3 and an acid molecular sieve through a binder, and then modifying with the rare earth element. The bifunctional catalyst for deep desulfurization and gasoline quality improvement can achieve deep desulfurization of high-sulfur fluid catalytic cracking gasoline, and ensure no significant loss of octane number under relatively mild conditions.

Abstract: A method for establishing a biological model on joint toxicity of Caenorhabditis elegans and an application thereof are provided. The method for establishing the biological model includes adding the L1-stage Caenorhabditis elegans to a mixed system of working solution of mycotoxins containing tenuazonic acid and penicillin, K-medium solution and E. coli OP50 to obtain L1-stage Caenorhabditis elegans. The biological model indicates that TeA and PAT have a synergistic effect on the growth, development and reproductive ability of Caenorhabditis elegans, and their toxicity mechanism is related to inducing nematodes and stimulating transcriptional factors of Daf-16 genes. The biological model and detection method are simple to operate and its test period is short.

Abstract: A method and a system for recommending a target garment matching an inputted garment. The method includes: extracting attributes from text description and image of the inputted garment to obtain extracted attributes; querying a knowledge graph using the extracted attributes to obtain matched attributes; retrieving candidate products from a garment pool using the matched attributes; extracting features from the inputted garment and the candidate products; determining the target garment from the candidate products based on grading scores between the features of the inputted garment and the features of the candidate products; and recommending the target garment. The knowledge graph includes nodes corresponding to type of clothes, category of clothes, attribute keys, values of attribute keys, context keys, values of context keys, combination of the values of the attribute keys and the type of clothes, and combination of the value of the attribute keys and the category of clothes.

Abstract: This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the first drain terminal, the first transistor being a depletion mode transistor and including a plurality of two-dimensional carrier channels of a conductivity type being one of a n-type or a p-type conductivity. The semiconductor device also includes a second transistor with a second gate terminal, a second source terminal, and a second drain terminal, the second transistor being an enhancement mode transistor, a gate-source interconnect forming an electrical connection between the first gate terminal and the second source terminal, and a drain-source interconnect forming an electrical connection between the first source terminal and the second drain terminal. The first transistor and the second transistor are fabricated on the same wafer or substrate.

Abstract: A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge, the semiconductor region including a first semiconductor region coupled with a drain terminal and a second semiconductor region coupled with a source terminal; and a third semiconductor region of a second conductivity type electrically coupled with a gate terminal, having a gate region and a net charge region, the net charge region disposed over the first semiconductor region and having a net charge in a depletion region that is substantially equal to the net charge of the at least one two-dimensional channel in the first semiconductor region when the semiconductor device is in an off-state.

Abstract: This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: A mower includes a cutter, a deck, a power unit, and a rotary unit. The deck includes a housing formed with a cutting cavity that connects with a grass discharge passage through a first outlet. The rotary unit includes a rotary body that includes a blocking portion and a connecting portion connected to each other. The rotary unit is capable of rotating to a first position or a second position. When the rotary unit is at the first position, the blocking portion blocks the first outlet. When the rotary unit is at the second position, the first outlet is opened. The deck further includes a first base plate. The first base plate is at least partially located below the rotary unit. The blocking portion mates with the first base plate, and the first base plate limits the downward movement of the blocking portion.

Abstract: A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 ?m) feature sizes is eliminated.