Abstract: The disclosure provides a liquid taking device and a liquid taking method. The liquid taking device comprises a liquid taking bottle, a heavy ball and liquid taking ropes. The liquid taking bottle has a first mouth and a bottom opposite to the first mouth. The heavy ball is arranged in the liquid taking bottle. The liquid taking device can be controlled to reach different depths under the ground by the action of two liquid ropes. When the first mouth of the bottle is placed facing downward, the heavy ball blocks the first mouth of the bottle under its own gravity to prevent liquid leakage; when the first mouth of the bottle is turned upwards under the action of the liquid taking rope, the heavy ball falls onto the bottom of the bottle, such that an external liquid can flow into the liquid taking device, which has a good practical utility.

Abstract: Provided are a bifunctional catalyst for deep desulfurization and gasoline quality improvement and a preparation method therefore and a use thereof. The bifunctional catalyst includes a modified catalyst and a loaded active metal, where the modified catalyst carrier is a ?-Al2O3 modified with a rare earth element, or the modified catalyst carrier is a composite carrier prepared by mixing and calcinating ?-Al2O3 and an acid molecular sieve through a binder, and then modifying with the rare earth element. The bifunctional catalyst for deep desulfurization and gasoline quality improvement can achieve deep desulfurization of high-sulfur fluid catalytic cracking gasoline, and ensure no significant loss of octane number under relatively mild conditions.

Abstract: Provided are an in situ bifunctional catalyst for deep desulfurization and increasing octane number of gasoline, and its preparation method and application. The bifunctional catalyst includes a modified catalyst carrier and a loaded active metal, where the modified catalyst carrier is a composite carrier prepared through mixing ?-Al2O3 and an acidic molecular sieve by a binder and calcining. When the bifunctional catalyst provided by the present application is used for hydrodesulfurization of gasolines, deep desulfurization, olefin reduction and octane number preservation can be realized simultaneously, thereby obtaining a high-quality oil product.

Abstract: A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the gate electrode through the barrier layer and at least partially through the III-V semiconductor layer. The charge compensation regions include a p-type semiconductor or oxide. In some aspects, the charge compensation regions extend vertically through said barrier layer into said channel layer, wherein said charge-compensation regions are doped with p-type dopants and are placed aside the 2DEG channel and do not overlap vertically with the 2DEG channel. In some aspects, at least a portion of the charge compensation regions extend from below the gate electrode to make Ohmic contact with the source electrode. In some aspects, by extending the charge compensation regions from below the gate electrode and closer to the source and drain electrodes, the HEFTs can demonstrate avalanche characteristics.

Abstract: Techniques for optimizing network-transferred multi-card content items are provided. In one technique, a first content item selection event is initiated that involves a set of content delivery campaigns that includes a content delivery campaign that includes a content item that comprises multiple cards. The content delivery campaign is selected and the content item is transmitted to a first computing device, where the multiple cards have a first card configuration. One or more events that are associated with the first computing device displaying at least one card of the plurality of cards is identified. Based on the events, a second card configuration is determined. Another content item selection event that involves the content delivery campaign is initiated and the content delivery campaign is selected. The content item is transmitted to a second computing device, where the multiple cards have the second card configuration.

Abstract: The present invention relates to salt caverns with an inner container for storing electrical energy as a flow battery. The salt caverns with a inner container for storing electrical energy as a flow battery comprises an air bag, a second pipeline and a first pipeline. The airbag is located in an underground salt cavern, the salt cavern is full of brine, and a liquid electrolyte is stored in the airbag. One end of the second pipeline is connected with the airbag while the other end thereof is located on the ground, and the second pipeline is used for filling the liquid electrolyte into the airbag. The first pipeline sleeves the second pipeline, one end of the first pipeline is connected with a shaft inlet of the salt cavern while the other end thereof is located on the ground, and the first pipeline is used for discharging the brine from the salt cavern.

Abstract: The disclosure provides a liquid taking device and a liquid taking method. The liquid taking device comprises a liquid taking bottle, a heavy ball and liquid taking ropes. The liquid taking bottle has a first mouth and a bottom opposite to the first mouth. The heavy ball is arranged in the liquid taking bottle. The liquid taking device can be controlled to reach different depths under the ground by the action of two liquid ropes. When the first mouth of the bottle is placed facing downward, the heavy ball blocks the first mouth of the bottle under its own gravity to prevent liquid leakage; when the first mouth of the bottle is turned upwards under the action of the liquid taking rope, the heavy ball falls onto the bottom of the bottle, such that an external liquid can flow into the liquid taking device, which has a good practical utility.

Abstract: A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the gate electrode through the barrier layer and at least partially through the III-V semiconductor layer. The charge compensation regions include a p-type semiconductor or oxide. In some aspects, the charge compensation regions extend vertically through said barrier layer into said channel layer, wherein said charge-compensation regions are doped with p-type dopants and are placed aside the 2DEG channel and do not overlap vertically with the 2DEG channel. In some aspects, at least a portion of the charge compensation regions extend from below the gate electrode to make Ohmic contact with the source electrode. In some aspects, by extending the charge compensation regions from below the gate electrode and closer to the source and drain electrodes, the HEFTs can demonstrate avalanche characteristics.

Abstract: The disclosure discloses a microwave processing equipment for continuous flow liquids, and belongs to the technical field of microwave processing. The microwave processing equipment for continuous flow liquids of the disclosure includes a feed preheating section, a microwave heating section and a cooling section. The microwave heating section includes a microwave generation system, a waveguide system, tuners, and a microwave absorption cavity. The waveguide system includes at least two waveguides. Each waveguide is installed at the microwave feed port formed in the outer wall of the microwave absorption cavity according to a predetermined angle. The predetermined angle is greater than or equal to 15° and less than 90°. The disclosure provides a specific implementation scheme for microwave processing of flow liquids. In consideration of the reflection action of microwaves, the safety of equipment operation process and the utilization rate of energy are improved by a special waveguide arrangement mode.

Abstract: The present invention discloses a device, system and method triaxial compression test with/without jacket by gas confining pressure on rock, and belongs to the technical field of rock mechanics tests. The device includes a container, wherein an accommodating cavity is disposed in the container for placing a core sample, a first through hole and a second through hole are respectively disposed at an upper end of the container, the first through hole is used for penetration of an end cap for loading an axial pressure to the core sample, the second through hole is used for injecting a gas into the accommodating cavity so as to apply a gas confining pressure on the core sample, a third through hole is disposed at a lower end of a side wall of the container, and the third through hole is used for communicating the accommodating cavity with the triaxial cell so as to achieve pressure transfer and balance between the accommodating cavity and the triaxial cell.

Abstract: Techniques for optimizing network-transferred multi-card content items are provided. In one technique, a first content item selection event is initiated that involves a set of content delivery campaigns that includes a content delivery campaign that includes a content item that comprises multiple cards. The content delivery campaign is selected and the content item is transmitted to a first computing device, where the multiple cards have a first card configuration. One or more events that are associated with the first computing device displaying at least one card of the plurality of cards is identified. Based on the events, a second card configuration is determined. Another content item selection event that involves the content delivery campaign is initiated and the content delivery campaign is selected. The content item is transmitted to a second computing device, where the multiple cards have the second card configuration.

Abstract: The present invention discloses a device, system and method triaxial compression test with/without jacket by gas confining pressure on rock, and belongs to the technical field of rock mechanics tests. The device includes a container, wherein an accommodating cavity is disposed in the container for placing a core sample, a first through hole and a second through hole are respectively disposed at an upper end of the container, the first through hole is used for penetration of an end cap for loading an axial pressure to the core sample, the second through hole is used for injecting a gas into the accommodating cavity so as to apply a gas confining pressure on the core sample, a third through hole is disposed at a lower end of a side wall of the container, and the third through hole is used for communicating the accommodating cavity with the triaxial cell so as to achieve pressure transfer and balance between the accommodating cavity and the triaxial cell.

Abstract: A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material and a set of electrodes for providing and controlling carrier charge in the carrier channels. The first material is different than the second material, and the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability.

Abstract: A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is located between the semiconductor region and the gate. Negatively charged ions are located within the dielectric layer underneath the gate.

Abstract: A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the semiconductor structure, and a set of electrodes for providing and controlling carrier charge in the carrier channel. The barrier layer is at least partially doped by impurities having a conductivity type opposite to a conductivity type of the carrier channel. The material of the barrier layer has a bandgap and thermal conductivity larger than a bandgap and thermal conductivity of material in the semiconductor structure.

Abstract: A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the semiconductor structure, and a set of electrodes for providing and controlling carrier charge in the carrier channel. The barrier layer is at least partially doped by impurities having a conductivity type opposite to a conductivity type of the carrier channel. The material of the barrier layer has a bandgap and thermal conductivity larger than a bandgap and thermal conductivity of material in the semiconductor structure.

Abstract: A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material and a set of electrodes for providing and controlling carrier charge in the carrier channels. The first material is different than the second material, and the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability.

Abstract: A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the semiconductor device and a gate electrode having multiple gate fingers of different lengths penetrating the layered structure to reach and control corresponding carrier channels at the different depths. The semiconductor device also includes a carrier electrode having multiple carrier fingers of different lengths penetrating the layered structure to access the corresponding carrier channels. The carrier fingers are interdigitated with the gate fingers.

Abstract: A vertical semiconductor device and a method of forming the same. A vertical semiconductor device has a substrate that includes a first material, a first electrode below the substrate, and at least one semiconductor region. The at least one semiconductor region includes a second material different from the first material. The second material is a III-nitride semiconductor material. The at least one semiconductor region is formed over the substrate. The vertical semiconductor device also has a second electrode over the at least one semiconductor region.

Abstract: A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is located between the semiconductor region and the gate. Negatively charged ions are located within the dielectric layer underneath the gate.