Abstract: A device may include a substrate of a first conductivity type, the first conductivity type being one of a n-type conductivity and a p-type conductivity, the substrate having a base surface. A device may include a first terminal coupled with the base surface of the substrate, a first semiconductor region disposed over the substrate, the substrate positioned between the first semiconductor region and the first terminal, the first semiconductor region including a top surface, which defines a plurality of trenches having sidewalls, the plurality of trenches separated by a plurality of pillars, the first semiconductor region formed of a first material with the first conductivity type, a second semiconductor region disposed over the sidewalls of the first semiconductor region to form a superjunction with the first semiconductor region, the second semiconductor region formed of a second material different from the first material and having a second conductivity type.

Abstract: Provided are a bifunctional catalyst for deep desulfurization and gasoline quality improvement and a preparation method therefore and a use thereof. The bifunctional catalyst includes a modified catalyst and a loaded active metal, where the modified catalyst carrier is a ?-Al2O3 modified with a rare earth element, or the modified catalyst carrier is a composite carrier prepared by mixing and calcinating ?-Al2O3 and an acid molecular sieve through a binder, and then modifying with the rare earth element. The bifunctional catalyst for deep desulfurization and gasoline quality improvement can achieve deep desulfurization of high-sulfur fluid catalytic cracking gasoline, and ensure no significant loss of octane number under relatively mild conditions.

Abstract: A method for establishing a biological model on joint toxicity of Caenorhabditis elegans and an application thereof are provided. The method for establishing the biological model includes adding the L1-stage Caenorhabditis elegans to a mixed system of working solution of mycotoxins containing tenuazonic acid and penicillin, K-medium solution and E. coli OP50 to obtain L1-stage Caenorhabditis elegans. The biological model indicates that TeA and PAT have a synergistic effect on the growth, development and reproductive ability of Caenorhabditis elegans, and their toxicity mechanism is related to inducing nematodes and stimulating transcriptional factors of Daf-16 genes. The biological model and detection method are simple to operate and its test period is short.

Abstract: A method and a system for recommending a target garment matching an inputted garment. The method includes: extracting attributes from text description and image of the inputted garment to obtain extracted attributes; querying a knowledge graph using the extracted attributes to obtain matched attributes; retrieving candidate products from a garment pool using the matched attributes; extracting features from the inputted garment and the candidate products; determining the target garment from the candidate products based on grading scores between the features of the inputted garment and the features of the candidate products; and recommending the target garment. The knowledge graph includes nodes corresponding to type of clothes, category of clothes, attribute keys, values of attribute keys, context keys, values of context keys, combination of the values of the attribute keys and the type of clothes, and combination of the value of the attribute keys and the category of clothes.

Abstract: This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the first drain terminal, the first transistor being a depletion mode transistor and including a plurality of two-dimensional carrier channels of a conductivity type being one of a n-type or a p-type conductivity. The semiconductor device also includes a second transistor with a second gate terminal, a second source terminal, and a second drain terminal, the second transistor being an enhancement mode transistor, a gate-source interconnect forming an electrical connection between the first gate terminal and the second source terminal, and a drain-source interconnect forming an electrical connection between the first source terminal and the second drain terminal. The first transistor and the second transistor are fabricated on the same wafer or substrate.

Abstract: A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge, the semiconductor region including a first semiconductor region coupled with a drain terminal and a second semiconductor region coupled with a source terminal; and a third semiconductor region of a second conductivity type electrically coupled with a gate terminal, having a gate region and a net charge region, the net charge region disposed over the first semiconductor region and having a net charge in a depletion region that is substantially equal to the net charge of the at least one two-dimensional channel in the first semiconductor region when the semiconductor device is in an off-state.

Abstract: This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: A mower includes a cutter, a deck, a power unit, and a rotary unit. The deck includes a housing formed with a cutting cavity that connects with a grass discharge passage through a first outlet. The rotary unit includes a rotary body that includes a blocking portion and a connecting portion connected to each other. The rotary unit is capable of rotating to a first position or a second position. When the rotary unit is at the first position, the blocking portion blocks the first outlet. When the rotary unit is at the second position, the first outlet is opened. The deck further includes a first base plate. The first base plate is at least partially located below the rotary unit. The blocking portion mates with the first base plate, and the first base plate limits the downward movement of the blocking portion.

Abstract: A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 ?m) feature sizes is eliminated.

Abstract: Ga2O3-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type ?-Ga2O3 drift layer on a ?-Ga2O3 substrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.

Abstract: The disclosure discloses a microwave processing equipment for continuous flow liquids, and belongs to the technical field of microwave processing. The microwave processing equipment includes a feed preheating section, a microwave heating section and a cooling section. The microwave heating section includes a microwave generation system, a waveguide system, tuners, and a microwave absorption cavity. The waveguide system includes at least two waveguides. Each waveguide is installed at the microwave feed port formed in the outer wall of the microwave absorption cavity according to a predetermined angle greater than or equal to 15° and less than 90°.

Abstract: A diode includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge; a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the semiconductor region, the material of the second conductivity type having a net-charge in a depletion region that is substantially equal to the net-charge of the at least one two-dimensional channel in the semiconductor region when the diode is under reverse bias; an anode material in contact with at least a portion of the at least one two-dimensional channel and at least a portion of the material of the second conductivity type; and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: The present invention relates to a synchronous sampling and measuring system and a method thereof for flue gas partition. The system includes a detection device arranged at an SCR outlet for simultaneous detection of flue gas from the pipelines in different areas, wherein the detection device is connected to a speed measurement device for measuring the speed of flue gas, the speed measurement device is connected to a central control unit and one end of a valve group, respectively, the other end of the valve group is connected to an air extracting device and a dilution unit, respectively, the control end of the valve group and the control end of the air extracting device are connected to a central control unit, respectively, the dilution unit is connected to a CEMS analyzer.

Abstract: This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: A method and a system for recommending a target garment matching an inputted garment. The method includes: extracting attributes from text description and image of the inputted garment to obtain extracted attributes; querying a knowledge graph using the extracted attributes to obtain matched attributes; retrieving candidate products from a garment pool using the matched attributes; extracting features from the inputted garment and the candidate products; determining the target garment from the candidate products based on grading scores between the features of the inputted garment and the features of the candidate products; and recommending the target garment. The knowledge graph includes nodes corresponding to type of clothes, category of clothes, attribute keys, values of attribute keys, context keys, values of context keys, combination of the values of the attribute keys and the type of clothes, and combination of the value of the attribute keys and the category of clothes.

Abstract: Salt caverns with an inner container for storing electrical energy as a flow battery are provided. The salt caverns with an inner container for storing electrical energy as a flow battery comprises an air bag, a second pipeline and a first pipeline. The airbag is located in an underground salt cavern, the salt cavern is full of brine, and a liquid electrolyte is stored in the airbag. One end of the second pipeline is connected with the airbag while the other end thereof is located on the ground, and the second pipeline is used for filling the liquid electrolyte into the airbag. The first pipeline sleeves the second pipeline, one end of the first pipeline is connected with a shaft inlet of the salt cavern while the other end thereof is located on the ground, and the first pipeline is used for discharging the brine from the salt cavern.

Abstract: The disclosure provides a liquid taking device and a liquid taking method. The liquid taking device comprises a liquid taking bottle, a heavy ball and liquid taking ropes. The liquid taking bottle has a first mouth and a bottom opposite to the first mouth. The heavy ball is arranged in the liquid taking bottle. The liquid taking device can be controlled to reach different depths under the ground by the action of two liquid ropes. When the first mouth of the bottle is placed facing downward, the heavy ball blocks the first mouth of the bottle under its own gravity to prevent liquid leakage; when the first mouth of the bottle is turned upwards under the action of the liquid taking rope, the heavy ball falls onto the bottom of the bottle, such that an external liquid can flow into the liquid taking device, which has a good practical utility.

Abstract: Provided are a bifunctional catalyst for deep desulfurization and gasoline quality improvement and a preparation method therefore and a use thereof. The bifunctional catalyst includes a modified catalyst and a loaded active metal, where the modified catalyst carrier is a ?-Al2O3 modified with a rare earth element, or the modified catalyst carrier is a composite carrier prepared by mixing and calcinating ?-Al2O3 and an acid molecular sieve through a binder, and then modifying with the rare earth element. The bifunctional catalyst for deep desulfurization and gasoline quality improvement can achieve deep desulfurization of high-sulfur fluid catalytic cracking gasoline, and ensure no significant loss of octane number under relatively mild conditions.

Abstract: Provided are an in situ bifunctional catalyst for deep desulfurization and increasing octane number of gasoline, and its preparation method and application. The bifunctional catalyst includes a modified catalyst carrier and a loaded active metal, where the modified catalyst carrier is a composite carrier prepared through mixing ?-Al2O3 and an acidic molecular sieve by a binder and calcining. When the bifunctional catalyst provided by the present application is used for hydrodesulfurization of gasolines, deep desulfurization, olefin reduction and octane number preservation can be realized simultaneously, thereby obtaining a high-quality oil product.