Abstract: In a solid-state imaging device, first electric charge is generated by at least two first photoelectric conversion elements in a first exposure period. At least two pieces of the first electric charge are added in a floating diffusion. A first memory stores a first pixel signal that is based on the first electric charge. Second electric charge is generated by at least one second photoelectric conversion element in a second exposure period. At least part of the second exposure period overlaps at least part of the first exposure period. The second electric charge is held in the floating diffusion. A second memory stores a second pixel signal that is based on the second electric charge.

Abstract: In a solid-state imaging device, first electric charge is generated by at least two first photoelectric conversion elements in a first exposure period. At least two pieces of the first electric charge are added in a floating diffusion. A first memory stores a first pixel signal that is based on the first electric charge. Second electric charge is generated by at least one second photoelectric conversion element in a second exposure period. At least part of the second exposure period overlaps at least part of the first exposure period. The second electric charge is held in the floating diffusion. A second memory stores a second pixel signal that is based on the second electric charge.

Abstract: This solid-state imaging device has a plurality of pixels formed by circuit elements distributed in a first and a second semiconductor substrates configured in a stacked structure. The solid-state imaging device has the first and the second semiconductor substrates and a plurality of connection electrodes formed between the first semiconductor substrate and the second semiconductor substrate to electrically connect signal lines of a plurality of photoelectric conversion circuits and signal lines of a plurality of signal processing circuits included in the first and second semiconductor substrates respectively. A plurality of pixel sets are defined to have at least one of the plurality of photoelectric conversion circuits, respectively, and the photoelectric conversion circuits included in the plurality of pixel sets adjacent to each other are connected to the corresponding signal processing circuits via the different connection electrodes which are formed at positions not adjacent to each other, respectively.

Abstract: A solid-state imaging device includes a plurality of pixels and a pixel control circuit. The pixel control circuit is configured to control the signal transfer circuit so that an imaging operation is performed simultaneously in the plurality of pixel group units and a plurality of imaging operations are performed in each of the plurality of pixel group units. In each of the plurality of imaging operations, an imaging signal output from at least one of two or more photoelectric conversion elements included in each of the plurality of pixel group units is transferred to one of two or more memories included in each of the plurality of pixel group units. Each of the two or more memories included in each of the plurality of pixel group units holds the imaging signal in a predetermined order.

Abstract: This solid-state imaging device has a plurality of pixels formed by circuit elements distributed in a first and a second semiconductor substrates configured in a stacked structure. The solid-state imaging device has the first and the second semiconductor substrates and a plurality of connection electrodes formed between the first semiconductor substrate and the second semiconductor substrate to electrically connect signal lines of a plurality of photoelectric conversion circuits and signal lines of a plurality of signal processing circuits included in the first and second semiconductor substrates respectively. A plurality of pixel sets are defined to have at least one of the plurality of photoelectric conversion circuits, respectively, and the photoelectric conversion circuits included in the plurality of pixel sets adjacent to each other are connected to the corresponding signal processing circuits via the different connection electrodes which are formed at positions not adjacent to each other, respectively.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: In an imaging device, a plurality of first photoelectric conversion units generate a first signal based on first visible light and infrared light. A plurality of second photoelectric conversion units generate a second signal based on only second visible light. An infrared absorption layer absorbs the infrared light and transmits only the second visible light. A plurality of third photoelectric conversion units generate a third signal based on the infrared light. A signal processing circuit generates a fourth signal by correcting the first signal using the third signal. The signal processing circuit generates a visible light image signal on the basis of the second signal and the fourth signal. The signal processing circuit generates an infrared light image signal on the basis of the third signal.

Abstract: A solid-state imaging device includes a plurality of pixels and a pixel control circuit. The pixel control circuit is configured to control the signal transfer circuit so that an imaging operation is performed simultaneously in the plurality of pixel group units and a plurality of imaging operations are performed in each of the plurality of pixel group units. In each of the plurality of imaging operations, an imaging signal output from at least one of two or more photoelectric conversion elements included in each of the plurality of pixel group units is transferred to one of two or more memories included in each of the plurality of pixel group units. Each of the two or more memories included in each of the plurality of pixel group units holds the imaging signal in a predetermined order.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: In an imaging device, a plurality of first photoelectric conversion units generate a first signal based on first visible light and infrared light. A plurality of second photoelectric conversion units generate a second signal based on only second visible light. An infrared absorption layer absorbs the infrared light and transmits only the second visible light. A plurality of third photoelectric conversion units generate a third signal based on the infrared light. A signal processing circuit generates a fourth signal by correcting the first signal using the third signal. The signal processing circuit generates a visible light image signal on the basis of the second signal and the fourth signal. The signal processing circuit generates an infrared light image signal on the basis of the third signal.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: A method of manufacturing a fuel cell. An insulating member has a plurality of communication holes disposed on a side of a gas diffusion layer, which is formed by stacking a layer made of a carbon fiber and a water-repellent layer, where the water-repellent layer is provided. The gas diffusion layer and the insulating member are sandwiched by a pair of electrodes, and a pair of contact pressure plates are disposed on respective rear surfaces of the pair of electrodes so as to sandwich the pair of electrodes so that the gas diffusion layer is pressurized by the pair of contact pressure plates. When a voltage is applied to the pair of electrodes while maintaining the pressurized state, the protrusion portion of the carbon fiber is burned and removed by Joule heat.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A solid-state imaging device includes a plurality of substrates provided to be overlapped and a connection structure. Each of the substrates includes a semiconductor layer in which a photoelectric conversion unit configured to convert incident light to a signal is formed, and an interconnection layer in which an interconnection configured to transmit the signal is formed and which overlaps the semiconductor layer. The semiconductor layer of a first substrate and the interconnection layer of a second substrate in two adjacent substrates among the plurality of substrates are disposed to face each other. The connection structure electrically connects the interconnection layer of the first substrate and the interconnection layer of the second substrate, and passes through only the semiconductor layer of the first substrate out of the semiconductor layer of the first substrate and the interconnection layer of the second substrate.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: In a solid-state imaging device and an electronic camera, a first substrate of the solid-state imaging device includes first and second photoelectric converting units, a transfer unit that transfers signal charges of the first and second photoelectric converting units to a connector, and a microlens that causes light to be incident on the first and second photoelectric converting unit. A second substrate of the solid-state imaging device includes first and second memory units that hold signal charges transferred from one or the other of the first and second photoelectric converting unit to the connector and an averaging unit that averages the signal charges held in the first memory unit and the signal charge held in the second memory unit.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: A substrate includes a base member having a predetermined thickness, and an electrode array provided in one surface in a thickness direction of the base member and having a plurality of electrodes arranged two-dimensionally in a plan view, and the electrode array includes a central portion and an incremental region provided around the central portion in the planar view and is formed so that a height of the electrodes in the incremental region gradually increase as approaching toward the central portion.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.