Abstract: In a solid-state imaging device and an electronic camera, a first substrate of the solid-state imaging device includes first and second photoelectric converting units, a transfer unit that transfers signal charges of the first and second photoelectric converting units to a connector, and a microlens that causes light to be incident on the first and second photoelectric converting unit. A second substrate of the solid-state imaging device includes first and second memory units that hold signal charges transferred from one or the other of the first and second photoelectric converting unit to the connector and an averaging unit that averages the signal charges held in the first memory unit and the signal charge held in the second memory unit.

Abstract: This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

Abstract: A semiconductor substrate according to the present invention includes: a substrate; an electrode array which is provided on the surface on one side in a thickness direction of the substrate and in which a plurality of electrodes is two-dimensionally arranged in a plan view; and a resin layer which is provided on the surface on one side and seals peripheries of the plurality of electrodes. The plurality of electrodes protrudes by greater than or equal to 5% of its own height on the resin layer and is capable of being accommodated in the resin layer by being compressed in the thickness direction.

Abstract: A solid-state imaging device having within a pixel region where pixels containing photoelectric conversion device are two-dimensionally arranged, a plurality of noise extracting pixels for outputting a noise signal not depending on incident light amount provided in an effective pixel region from which image signal associated with object image is outputted, disposed in a manner scattered into two dimensions so that, taking N×N (N being an integer of 2 or more) pixels within the effective pixel region as unit block, at least one is provided in each row and in each column within that unit block.

Abstract: A substrate includes a base member having a predetermined thickness, and an electrode array provided in one surface in a thickness direction of the base member and having a plurality of electrodes arranged two-dimensionally in a plan view, and the electrode array includes a central portion and an incremental region provided around the central portion in the planar view and is formed so that a height of the electrodes in the incremental region gradually increase as approaching toward the central portion.

Abstract: An A/D conversion section (11) counts clocks whose frequency corresponds to the size of output signals from pixels (10a), and digitalizes the result so as to create count values, and also calculates a difference between a first count value that relates to the output signal during a reset period of a pixel, and a second count value that relates to the output signal during an exposure period of the pixel, and then outputs this difference as an imaging signal for this pixel. A control unit (12) controls the A/D conversion section such that the length of the counting period of the first count value is equal to the length of the counting period of the second count value.

Abstract: A solid-state image pickup device includes a pixel unit in which pixels are arranged in a two-dimensional manner, the pixels including a photoelectric conversion element, a charge holding unit, a transmission unit, and a first output unit and a second output unit; a second processing unit; and a control unit configured to control exposure of the pixels such that exposure periods for still images of all pixels constituting an area to be read are equal to one another, and control reading of the still image signal and reading of the moving image signal in units of fields, the all pixels constituting the area to be read being divided into a plurality of fields, in such a manner that the still image signal is to be read from both the first output unit and the second output unit in units of fields.

Abstract: According to a manufacturing method for a fuel cell, an insulating member having a plurality of communication holes therein is disposed on a side of a gas diffusion layer, which is formed by stacking a layer made of a carbon fiber and a water-repellent layer, where the water-repellent layer is provided, the gas diffusion layer and the insulating member are sandwiched by a pair of electrodes, and a pair of contact pressure plates are disposed on respective rear surfaces of the pair of electrodes so as to sandwich the pair of electrodes so that the gas diffusion layer is pressurized by the pair of contact pressure plates. When a voltage is applied to the pair of electrodes while maintaining the pressurized state, an electric current flows through a protrusion portion of a carbon fiber which comes in contact with the electrode on the water-repellent layer side via the communication holes of the insulating member, so that the protrusion portion of the carbon fiber is burned and removed by Joule heat.

Abstract: The present invention is an image pickup apparatus including a pixel section in which pixels each including a photoelectric conversion section are two-dimensionally arrayed, a transistor that collectively resets the photoelectric conversion sections, an exposure control section that performs control so as to perform exposure for a predetermined time after reset, a signal charge storage section that is light-shielded and stores signal charge generated by the photoelectric conversion sections, a transistor that collectively transfers signal charge from the photoelectric conversion sections to the signal storage section, and a selection transistor that reads still image signal charge for an LV pixel group before signal charge of other pixel groups, then reads signal charge for a live view generated by the LV pixel group one or more times within a time segment during which the still image signal charge of the other pixel groups is read.

Abstract: A solid state imaging device comprises a pixel unit, a first controller, and a second controller. The pixel unit has a two dimensional matrix of pixels and each of the pixels is arrayed in the matrix. The first controller independently controls the output unit row by row. The second controller independently controls the first reset unit row by row. The each of pixels comprises a photoelectric conversion element, a first reset unit, a charge retention unit, a transmitter, a second reset unit, and an output unit. The element converts incident light into a signal charge and accumulates the converted signal charge. The first reset unit resets the signal charge. The charge retention unit retains a signal charge output from the photoelectric conversion element. The transmitter transmits the signal charge to the charge retention unit. The second reset unit resets the signal charge. The output unit outputs a pixel signal in response to the signal charge to a vertical signal line.

Abstract: A solid-state image pickup device includes a pixel unit in which pixels are arranged in a two-dimensional manner, the pixels including a photoelectric conversion element, a charge holding unit, a transmission unit, and a first output unit and a second output unit; a second processing unit; and a control unit configured to control exposure of the pixels such that exposure periods for still images of all pixels constituting an area to be read are equal to one another, and control reading of the still image signal and reading of the moving image signal in units of fields, the all pixels constituting the area to be read being divided into a plurality of fields, in such a manner that the still image signal is to be read from both the first output unit and the second output unit in units of fields.

Abstract: The present invention is an image pickup apparatus provided with a pixel section in which pixels each including a photoelectric conversion section and a signal storage section that temporarily stores a signal charge of the photoelectric conversion section are two-dimensionally arrayed, that resets the signal storage sections before exposing a still image and reads reset data used to remove reset noise of a still image, configured to divide the pixel section into a plurality of pixel groups and sequentially reset the signal storage sections of the respective pixel groups by a transistor, sequentially read reset signals by a selection transistor and cause the selection transistor to read one or more times an LV signal charge generated by exposure of a predetermined pixel group within a time segment during which the signal storage sections are sequentially reset before the signal storage sections of the predetermined pixel group are reset.

Abstract: A solid-state imaging apparatus including: a pixel section having unit pixels arranged into a two-dimensional matrix, each unit pixel containing a photoelectric conversion section for effecting a photoelectric conversion and an amplification section for amplifying and reading signal charges generated at the photoelectric conversion section; a current supply provided for each column for flowing a bias current to the amplification section; a column processing section provided for each column for processing a signal from the amplification section column by column; an output section for sequentially reading signals processed column by column at the column processing section and outputting them to an external signal processing circuit; and a bias current controlling section for controlling the bias current of the current supply in accordance with a gain setting at the external signal processing circuit.

Abstract: A plurality of pixels arranged into two dimensions; a differential processing means for effecting a differential processing between a reset level of the pixel and a signal level changing correspondingly to a light signal incident on the pixel so as to produce an imaging signal of the pixel; a reset level detection means for detecting and outputting a result as to whether the reset level is within a predetermined range or outside the predetermined range; an extraction means for extracting pixels to be corrected based on a result of the differential processing by the differential processing means and the result of detection by the reset level detection means; and a correction means for replacing the result of the differential processing by the differential processing means of the pixels to be corrected extracted by the extraction means with an imaging signal corresponding to a saturation level.

Abstract: A solid-state imaging device including: pixel section having two-dimensionally arranged pixels, each pixel containing photoelectric conversion device, charge retaining section, amplification section, and reset section controlled by reset control signal applied on control terminal, pixel section having vertical signal line and constant current supply; CDS circuit for outputting pixel signal corresponding to light signal by computing difference between first signal outputted from the pixel immediately after applying first potential to control terminal and second signal outputted from pixel corresponding to signal charges; and reset section control section taking potential of reset control signal at the time of cutting off connection between the one end and the other end of reset section as second potential, for applying third potential being intermediate potential between first potential and second potential to control terminal between a timing of outputting the first signal and a timing of outputting the secon

Abstract: A solid-state imaging apparatus including: a solid-state imaging device having a pixel section formed of a plurality of pixels in a two-dimensional array each containing a photoelectric conversion section for generating a signal corresponding to a quantity of incident light, a read drive section for setting one or more pixels in the pixel section as a read unit group to effect read operation by the unit of the read unit group, and a global shutter function setting section for obtaining an imaging signal where an exposure start timing and an exposure period of all subject pixels in the pixel section are the same; a light quantity distribution detecting means for detecting a distribution of said quantity of incident light to the pixel section of the solid-state imaging device; and a drive control means for setting to the read drive section an order of read sequence of the read unit groups based on a light quantity distribution information of the pixel section detected at the light quantity distribution detectin

Abstract: A solid-state imaging apparatus including: a pixel section having pixels arranged into a matrix, each pixel containing an electric charge retaining section with a first accumulation capacitance for retaining a signal electric charge, a photoelectric conversion device with a second accumulation capacitance greater than the first accumulation capacitance where a light signal is converted into signal electric charges and then accumulated, a transfer means for controlling a transfer of the signal electric charges from the photoelectric conversion device to the electric charge retaining section, a signal amplification means for amplifying the signal electric charges retained at the electric charge retaining section and outputting them as a pixel signal, and a reset means for controlling a connection between the photoelectric conversion device and a pixel power supply; a horizontal and vertical scanning means for outputting the pixel signal; and a control section for, after transfer of the signal electric charges b

Abstract: An A/D conversion section (11) counts clocks whose frequency corresponds to the size of output signals from pixels (10a), and digitalizes the result so as to create count values, and also calculates a difference between a first count value that relates to the output signal during a reset period of a pixel, and a second count value that relates to the output signal during an exposure period of the pixel, and then outputs this difference as an imaging signal for this pixel. A control unit (12) controls the A/D conversion section such that the length of the counting period of the first count value is equal to the length of the counting period of the second count value.

Abstract: In an XY address type solid-state imager apparatus comprising a solid-state imager having a plurality of pixels two-dimensionally arranged, and horizontal and vertical scanning circuits to read signals of the pixels, the scanning circuits each have a progressive scanning circuit to progressively read pixel signals by a first scanning control signal, and an interlace scanning circuit to read pixel signals with an interlaced manner by a second scanning control signal different from the first scanning control signal, and arbitrarily carries out combining of progressive reading and interlace reading in one frame in accordance with a combination of the respective scanning control signals, and reads pixel signals.

Abstract: A solid-state imaging apparatus including a pixel section having a plurality of pixels arrayed in two dimensions, each having a photoelectric conversion device, a means for resetting signal accumulated at the photoelectric conversion device, a memory means for retaining signal accumulated at the photoelectric conversion device, and a transfer means for transferring signal accumulated at the photoelectric conversion device to the memory means, the signal retained at the memory means being outputted as signal of the pixel, and further including: a global control means, the pixel section having a plurality of pixel regions divided in row direction, for concurrently effecting the reset operation and the transfer operation, respectively, with treating the divided pixel region as a unit; a vertical scanning means for controlling sequence in outputting signals of the pixels with treating the divided pixel region as a unit; and a first and a second horizontal read means for outputting signals of the pixels of two pix