Abstract: One aspect of the present disclosure provides a first bearing including an inner ring, an outer ring, and cylindrical rollers. The inner ring includes: an insertion groove formed in a lower surface for inserting the cylindrical rollers between an inner raceway surface and an outer raceway surface; a blocking plug configured to block the insertion groove, the blocking plug having a part of the inner raceway surface formed thereon; and a bolt for securing the blocking plug in the insertion groove. In the mating surface of the blocking plug contacted with the bottom surface of the insertion groove, when the shortest length between the bolt insertion hole and the inner raceway surface is shown as La, and the shortest length between the bolt insertion hole and the inner peripheral surface is shown as Lb, the shortest lengths La and Lb satisfy the following formula: La/Lb>0.65.

Abstract: An electronic component includes a glass substrate having a glass body and a protruding crystallized portion, the glass body including a top surface, a bottom surface, and a first side surface connecting the bottom surface and the top surface to each other, and the first side surface having the crystallized portion; a colored insulation layer on the first side surface; and a through-conductor within the glass body and extending through the top surface and the bottom surface. The crystallized portion extends in a first direction that is parallel to the bottom surface, as viewed from a direction orthogonal to the first side surface. As viewed from the direction orthogonal to the first side surface, at least a portion of the colored insulation layer extends in the first direction and is disposed adjacent to the crystallized portion in a second direction that is orthogonal to the first direction.

Abstract: A semiconductor light-emitting device includes: a substrate having a wiring electrode; a semiconductor light-emitting element mounted on the wiring electrode and having a light-emitting functional layer with an upper surface exposed; a wavelength conversion plate mounted on the light-emitting functional layer and being made of a sintered body including fluorescent material particles and binder particles; and an adhesive layer including a resin medium for adhering a light-incident surface of the wavelength conversion plate to a light output surface of the light-emitting functional layer, and resin particles dispersed in the resin medium. The light-incident surface can expose a sintered surface of the sintered body with a concave portion, and the resin particles are fitted in the concave portion and compressively deformed. The semiconductor light-emitting device is capable of reducing the heat generated from the wavelength conversion plate and of maintaining the high light output.

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction, a memory cell provided between the first wiring line and the second wiring line, including a bottom surface connected to the first wiring line and a top surface connected to the second wiring line, and including a magnetoresistance effect element and a switching element stacked in a third direction, and a contact including a top surface connected to the second wiring line, the top surface of the contact being located higher than the top surface of the memory cell.

Abstract: In an information reader, a first relationship information, which defines the two-dimensional area of a first information code (e.g., the position coordinates of the four corner points), is detected from a first information code image. The first information code is subjected to reading information, based on the detected first relationship information. Parameters of a learning model are then adjusted based on training data including multiple successful cases of a reading process using the first relationship information. A second information code image captured by a camera is inputted to the learning model. A second relationship information, which is an estimated value of the information that defines the two-dimensional region of the second information code, is obtained from the learning model. The information recorded in the second information code is read based on the acquired second relationship information, thus reading results being outputted.

Abstract: According to one embodiment, a memory device includes: a switching element including first and second conductive layers, and a variable resistive layer between the first and second conductive layers. The first or second conductive layers includes a first layer, a second layer between the first layer and the variable resistive layer, and a third layer between the first layer and the second layer. Each of the first and second layers is selected from a layer including carbon, a layer including nitrogen and carbon, a layer including nitrogen and titanium, a layer including nitrogen and tantalum, a layer including tungsten, a layer including nitrogen and tungsten, and a layer including platinum. The third layer includes at least one selected from lithium, sodium, magnesium, calcium, titanium, or lanthanum.

Abstract: An information processing apparatus includes a display, controls switching between a first display mode in which display is controlled using the entire screen area of the display as one display area, and a second display mode in which display is controlled by splitting the screen area of the display into multiple display areas, and when switching from the first display mode to the second display mode, one window among windows of applications running in the first display mode is displayed in a first display area among the multiple display areas, and it is controlled whether or not to display, in a second display area except the first display area among the multiple display areas, thumbnail images corresponding to windows except the one window among the windows in the first window mode based on the number of display areas in the second display mode.

Abstract: An information processing apparatus controls switching between a first display mode to control display using the entire screen area of a display as one display area, and a second display mode to control display by splitting the screen area of the display into multiple display areas, and when switching from the first display mode to the second display mode, one window among windows of applications running in the first display mode is displayed in a first display area among the display areas, and thumbnail images corresponding to windows except the one window among the windows in the first display mode are displayed in a second display area among the display areas, and due to the fact that a predetermined operation by a user is detected, the thumbnail images are displayed in a display area specified by the predetermined operation among the display areas inside the screen area.

Abstract: Provided are: cellulose porous particles which have large surface areas on which cells can be attached, and on which cells can be adhered easily, and which rarely undergo the detachment of cells when the cells are cultured at a high density; and a microcarrier for culture use, which comprises the cellulose porous particles. The cellulose porous particles according to the present invention are composed of cellulose, in which the cellulose constituting the cellulose porous particles is modified by a cationic substituent and the cellulose constituting the celluose porous particles has a polypeptide bound thereto.

Abstract: The present disclosure provides a thermosetting resin composition and the like, from which is obtained a cured product that excels in dielectric properties with respect to high-frequency radio waves. The thermosetting resin composition and the like of the present disclosure contain a thermosetting resin having a plurality of ethylenically unsaturated groups per molecule. The ethylenically unsaturated groups are carbon-carbon double bonds each containing two carbon atoms. A percentage of a number of ethylenically unsaturated groups in which both of the two carbon atoms are bonded to one or two atoms other than a hydrogen atom by single bonds is 50% or greater, with proviso that the total number of the ethylenically unsaturated groups is 100%. Alternatively, a dielectric loss tangent at 40 GHz of a cured product of the thermosetting resin composition is smaller than a dielectric loss tangent at 10 GHz of the cured product.

Abstract: A customer service system for providing customer service using a robot for customer service is provided. A first acquisition unit acquires first information regarding a topic provided by a person in charge of response in a negotiation between a visitor and the person in charge of response. A second acquisition unit acquires a detection result regarding speech and behavior of the visitor by the robot. An estimation unit estimates a reaction of the visitor on a basis of the detection result acquired by the second acquisition unit. An output unit outputs second information regarding the reaction estimated by the estimation unit.

Abstract: To provide a simply-structured multilayer electrostatic actuator that exhibits a sufficient stroke and a sufficient contraction force in a specific drive range, and rapidly hardens upon an attempt to widen the interval between electrodes beyond the drive range. A multilayer electrostatic actuator (1) is configured by a plurality of actuator parts (2a, 2b, 2c) each including: a first film (3a1, 3b1, 3c1) having a plurality of first connection regions (7a1, 7b1, 7c1) formed on one surface in a predetermined pattern; and a second film (3a2, 3b2, 3c2) connected to the first film via the first connection regions, and having a plurality of second connection regions (7a2, 7b2, 7c2) formed on a surface opposite to the first film in the identical pattern. The actuator parts are connected and layered via the second connection regions.

Abstract: According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.

Abstract: A switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

Abstract: An integrated circuit includes a Wheatstone bridge and a bias voltage circuit. The Wheatstone bridge includes a first resistor connected between a first node on a high potential side at which a predetermined voltage is generated and a second node, a second resistor connected between the second node and a third node on a low potential side, a third resistor connected between the first node and a fourth node, and a fourth resistor connected between the fourth node and the third node. The bias voltage circuit includes a fifth resistor having a first end connected to the third node and a second end, and a first operational amplifier circuit having an inverting input terminal to which the second end of the fifth resistor is connected, a non-inverting input terminal configured to receive a reference voltage lower than the predetermined voltage, and an output terminal connected to the third node.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

Abstract: In an information reader, a first relationship information, which defines the two-dimensional area of a first information code (e.g., the position coordinates of the four corner points), is detected from a first information code image. The first information code is subjected to reading information, based on the detected first relationship information. Parameters of a learning model are then adjusted based on training data including multiple successful cases of a reading process using the first relationship information. A second information code image captured by a camera is inputted to the learning model. A second relationship information, which is an estimated value of the information that defines the two-dimensional region of the second information code, is obtained from the learning model. The information recorded in the second information code is read based on the acquired second relationship information, thus reading results being outputted.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.

Abstract: A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.