Abstract: An information processing apparatus controls switching between a first display mode to control display using the entire screen area of a display as one display area, and a second display mode to control display by splitting the screen area of the display into multiple display areas, and when switching from the first display mode to the second display mode, one window among windows of applications running in the first display mode is displayed in a first display area among the display areas, and thumbnail images corresponding to windows except the one window among the windows in the first display mode are displayed in a second display area among the display areas, and due to the fact that a predetermined operation by a user is detected, the thumbnail images are displayed in a display area specified by the predetermined operation among the display areas inside the screen area.

Abstract: An information processing apparatus includes a display, controls switching between a first display mode in which display is controlled using the entire screen area of the display as one display area, and a second display mode in which display is controlled by splitting the screen area of the display into multiple display areas, and when switching from the first display mode to the second display mode, one window among windows of applications running in the first display mode is displayed in a first display area among the multiple display areas, and it is controlled whether or not to display, in a second display area except the first display area among the multiple display areas, thumbnail images corresponding to windows except the one window among the windows in the first window mode based on the number of display areas in the second display mode.

Abstract: The present disclosure provides a thermosetting resin composition and the like, from which is obtained a cured product that excels in dielectric properties with respect to high-frequency radio waves. The thermosetting resin composition and the like of the present disclosure contain a thermosetting resin having a plurality of ethylenically unsaturated groups per molecule. The ethylenically unsaturated groups are carbon-carbon double bonds each containing two carbon atoms. A percentage of a number of ethylenically unsaturated groups in which both of the two carbon atoms are bonded to one or two atoms other than a hydrogen atom by single bonds is 50% or greater, with proviso that the total number of the ethylenically unsaturated groups is 100%. Alternatively, a dielectric loss tangent at 40 GHz of a cured product of the thermosetting resin composition is smaller than a dielectric loss tangent at 10 GHz of the cured product.

Abstract: Provided are: cellulose porous particles which have large surface areas on which cells can be attached, and on which cells can be adhered easily, and which rarely undergo the detachment of cells when the cells are cultured at a high density; and a microcarrier for culture use, which comprises the cellulose porous particles. The cellulose porous particles according to the present invention are composed of cellulose, in which the cellulose constituting the cellulose porous particles is modified by a cationic substituent and the cellulose constituting the celluose porous particles has a polypeptide bound thereto.

Abstract: To provide a simply-structured multilayer electrostatic actuator that exhibits a sufficient stroke and a sufficient contraction force in a specific drive range, and rapidly hardens upon an attempt to widen the interval between electrodes beyond the drive range. A multilayer electrostatic actuator (1) is configured by a plurality of actuator parts (2a, 2b, 2c) each including: a first film (3a1, 3b1, 3c1) having a plurality of first connection regions (7a1, 7b1, 7c1) formed on one surface in a predetermined pattern; and a second film (3a2, 3b2, 3c2) connected to the first film via the first connection regions, and having a plurality of second connection regions (7a2, 7b2, 7c2) formed on a surface opposite to the first film in the identical pattern. The actuator parts are connected and layered via the second connection regions.

Abstract: A customer service system for providing customer service using a robot for customer service is provided. A first acquisition unit acquires first information regarding a topic provided by a person in charge of response in a negotiation between a visitor and the person in charge of response. A second acquisition unit acquires a detection result regarding speech and behavior of the visitor by the robot. An estimation unit estimates a reaction of the visitor on a basis of the detection result acquired by the second acquisition unit. An output unit outputs second information regarding the reaction estimated by the estimation unit.

Abstract: According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.

Abstract: A switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

Abstract: An integrated circuit includes a Wheatstone bridge and a bias voltage circuit. The Wheatstone bridge includes a first resistor connected between a first node on a high potential side at which a predetermined voltage is generated and a second node, a second resistor connected between the second node and a third node on a low potential side, a third resistor connected between the first node and a fourth node, and a fourth resistor connected between the fourth node and the third node. The bias voltage circuit includes a fifth resistor having a first end connected to the third node and a second end, and a first operational amplifier circuit having an inverting input terminal to which the second end of the fifth resistor is connected, a non-inverting input terminal configured to receive a reference voltage lower than the predetermined voltage, and an output terminal connected to the third node.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

Abstract: In an information reader, a first relationship information, which defines the two-dimensional area of a first information code (e.g., the position coordinates of the four corner points), is detected from a first information code image. The first information code is subjected to reading information, based on the detected first relationship information. Parameters of a learning model are then adjusted based on training data including multiple successful cases of a reading process using the first relationship information. A second information code image captured by a camera is inputted to the learning model. A second relationship information, which is an estimated value of the information that defines the two-dimensional region of the second information code, is obtained from the learning model. The information recorded in the second information code is read based on the acquired second relationship information, thus reading results being outputted.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.

Abstract: A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.

Abstract: According to one embodiment, a magnetic memory device includes: a first interconnect; a second interconnect; a first switching element provided on the first interconnect; a second switching element provided on the second interconnect; a first insulating layer provided surrounding the first switching element; a second insulating layer surrounding the second switching element and not being in contact with the first insulating layer; a first conductor provided on the first switching element and the first insulating layer; a second conductor provided on the second switching element and the second insulating layer; a first magnetoresistive effect element provided on the first conductor; and a second magnetoresistive effect element provided on the second conductor.

Abstract: This anisotropic conductive sheet (10) comprises: an insulating layer (11) having a first surface located on one side in the thickness direction, a second surface located on the other side, and a plurality of through holes (12) penetrating between the first surface and the second surface; a plurality of conductive layers (22) continuously arranged at the inner wall surface of the through holes in each of at least some of the plurality of through holes and around the openings of the through holes on the first surface; and a plurality of first grooves (14) that are arranged between the plurality of conductive layers on the first surface to insulate the conductive layers from each other, wherein the center of gravity (C2) of the opening of each through hole is set apart from the center of gravity (C1) of the respective conductive layer on the first surface.

Abstract: Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element portion, a switching element portion provided on a lower layer side of the magnetoresistance effect element portion, a buffer insulating portion provided between the magnetoresistance effect element portion and the switching element portion, and a conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other.

Abstract: According to one embodiment, a switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

Abstract: The present invention appropriately determines a time to replace a responsive glass membrane for measuring a sample containing hydrofluoric acid. A measurement device for measuring a hydrogen ion concentration of a liquid sample containing hydrofluoric acid, the measurement device including a glass electrode that measures a hydrogen ion concentration in the liquid sample, the glass electrode including a responsive glass membrane, a membrane resistance measurement unit that measures a membrane resistance value of the responsive glass membrane, a temperature measurement unit that measures a temperature of an environment in which the responsive glass membrane is disposed, and an output unit that outputs a replacement index for replacing the responsive glass membrane based on the membrane resistance value and the temperature.