Abstract: According to one embodiment, a method for manufacturing a magnetoresistive memory device includes forming a first layer stack on a substrate. A second layer stack including a first ferromagnet is formed on the first layer stack. A mask including a first portion and an opening is formed above the second layer stack. The second layer stack is etched with an ion beam that travels through the opening. The first layer stack is etched by reactive ion etching through the opening.

Abstract: A liquid discharge head includes: a first channel member including a liquid channel. The liquid channel includes: pressure chambers connected respectively to nozzles and arranged in a first direction; throttle channels connected to the pressure chambers and extending from connection portions with the pressure chambers toward a first side in a second direction orthogonal to the first direction; and coupling channels arranged in the first direction, each of the coupling channels being connected to two or more of the throttle channels that are adjacent to each other in the first direction, extending in a third direction orthogonal to the first direction and the second direction, having openings in a surface in the third direction of the first channel member.

Abstract: An antenna-integrated wireless module is provided which does not need a metal case, and which can realize size reduction. A shield layer is formed on an upper surface of a resin sealing layer, which is disposed on one principal surface of a substrate and which covers a wireless region and an antenna region, such that the shield layer does not cover a portion of the resin sealing layer, the portion being positioned directly above the antenna region. Hence the shield layer formed on the upper surface of the resin sealing layer on the side covering the wireless region can serve to suppress electromagnetic waves radiated from a wireless functional section, which is disposed in a region overlapping the wireless region when looking at the module in a plan view, and which includes an RF circuit disposed at least on the one principal surface of the substrate or inside the substrate.

Abstract: A liquid discharging head includes a channel member having a nozzle surface formed with first nozzles, second nozzles, third nozzles and fourth nozzles. The channel member is formed with: a first distributing channel communicating with a first storage chamber and extending in a first direction, a second distributing channel communicating with a second storage chamber, extending in the first direction, and arranged side by side to the first distributing channel in a second direction, a first common channel communicating with the first nozzles, a second common channel communicating with the second nozzles, a third common channel communicating with the third nozzles, and a fourth common channel communicating with the fourth nozzles. The first to fourth common channels each extend in a third direction crossing the first and second directions, and partially overlaps with the first and second distributing channels in a fourth direction orthogonal to the nozzle surface.

Abstract: An adhesive includes a modified olefin polymer (A) allowing a polymer of a C2 to C20 ?-olefin having a structural unit derived from a C4 to C20 ?-olefin to be modified with a monomer having a functional group capable of reacting with an isocyanate group and having a heat of fusion measured in accordance with JIS K7122 of 0 J/g or more and 50 J/g or less and a polyisocyanate (B).

Abstract: A liquid ejection head includes: nozzles; a channel member including a plurality of pressure chambers each in communication with a corresponding one of the nozzles; and a plurality of piezoelectric elements corresponding to the pressure chambers. Each piezoelectric element includes: a vibrating film covering the corresponding pressure chamber; a piezoelectric film positioned opposite to the pressure chamber with respect to the vibrating film; a first electrode interposed between the vibrating film and the piezoelectric film; and a second electrode having compressive stress and positioned opposite to the vibrating film with respect to the piezoelectric film. The piezoelectric film has a ratio of (001) orientation to (100) orientation that is equal to or greater than 50%. The vibrating film and the piezoelectric film are deflected convexly toward the corresponding pressure chamber while no potential difference is produced between the first electrode and the second electrode.

Abstract: A liquid ejecting head includes: a plurality of liquid ejecting modules each including a plurality of head units and a first plate, a second plate, and a protrusion. The plurality of liquid ejecting modules is arrayed in a first direction. The first plate has a first surface to which the plurality of head units is fixed and a second surface opposite to the first surface. The first plate has a thickness in a second direction. The second plate is disposed at the second surface of the first plate so as to extend along the plurality of liquid ejecting modules. The protrusion protrudes from the second plate in a direction away from the first plate.

Abstract: An actuator device includes an actuator substrate having actuators, individual conductors electrically connected with the actuators respectively, and dummy conductors; and a bonding member bonded to a surface of the actuator substrate provided with the individual conductors and the dummy conductors. The individual conductors are aligned in an alignment direction to form a first row and a second row arranged in an orthogonal direction orthogonal to the alignment direction. In a first end portion of the actuator substrate on one side in the alignment direction, first individual conductors are aligned in the alignment direction without intervening second individual conductors therebetween. In a second end portion of the actuator substrate on the other side in the alignment direction, the second individual conductors are aligned in the alignment direction without intervening the first individual conductors therebetween.

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Abstract: There is provided a liquid discharge apparatus which includes a channel substrate having a nozzle, a pressure chamber which communicates with the nozzle, an actuator which covers the pressure chamber, and a contact point that is electrically connected to the actuator, and a circuit board which has wires that are to be electrically connected to contact points, and which is adhered to the channel substrate. The channel substrate includes an adhesive wall which is provided with contact points, and which has a surface to which an adhering portion of the circuit board to be adhered to the channel substrate, is adhered, and further includes a wall portion which is provided with a cavity on a side of the adhesive wall, opposite to the surface, and which demarcates the cavity on a side opposite to the surface, of the adhesive wall, and the adhering portion is facing the cavity and the wall portion.

Abstract: According to one embodiment, a method of manufacturing a storage device comprises forming a state change layer on a substrate. The state change layer has first and second resistance states. The state change layer is switchable from one to the other of the first and second resistance states according to a magnitude of a voltage applied thereto. A conductor is formed on an upper surface of the state change layer. The conductor comprises carbon. An upper surface of the conductor is processed to reduce the roughness thereof. A first ferromagnetic material is then formed on the upper surface of the conductor. A nonmagnetic material is formed on an upper surface of the first ferromagnetic material. A second ferromagnetic material is formed on an upper surface of the nonmagnetic material.

Abstract: The present invention provides a conductive paste for positive electrodes of lithium-ion batteries and a mixture paste for positive electrodes of lithium-ion batteries that are inhibited from increasing in viscosity and gelling, and that have an easy-to-apply viscosity. The conductive paste of the present invention contains a dispersion resin (A), polyvinylidene fluoride (B), conductive carbon (C), a solvent (D), and a dehydrating agent (E).

Abstract: A liquid ejection apparatus, including: first piezoelectric elements arranged on an element-disposed surface in a first direction; a protective cover covering the first piezoelectric elements and including a top wall portion and two side wall portions connected thereto; first wires drawn respectively from the first piezoelectric elements to an outside of the protective cover in a second direction parallel to the element-disposed surface and orthogonal to the first direction and extending on an outer surface of the top wall portion via an outer surface of a corresponding side wall portion; first terminals disposed on the outer surface of the top wall portion and connected respectively to the first wires; and a driver electrically connected to the first terminals, wherein a distance in the first direction between any adjacent two of the first wires on an outer surface of the protective cover is larger than that on the element-disposed surface.

Abstract: A memory device includes first and second resistance change elements and first and second double-gate transistors. The first resistance change element includes first and second terminals. The second resistance change element includes a third terminal coupled to the first terminal and a fourth terminal. The first double-gate transistor includes a fifth terminal coupled to the second terminal, a sixth terminal, and a first gate coupled to a first word line and a second gate coupled to a second word line. The second double-gate transistor includes a seventh terminal coupled to the fourth terminal, an eighth element, and a third gate coupled to the first word line and a fourth gate coupled to a third word line.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Abstract: According to one embodiment, a method of manufacturing a storage device comprises forming a state change layer on a substrate. The state change layer has first and second resistance states. The state change layer is switchable from one to the other of the first and second resistance states according to a magnitude of a voltage applied thereto. A conductor is formed on an upper surface of the state change layer. The conductor comprises carbon. An upper surface of the conductor is processed to reduce the roughness thereof. A first ferromagnetic material is then formed on the upper surface of the conductor. A nonmagnetic material is formed on an upper surface of the first ferromagnetic material. A second ferromagnetic material is formed on an upper surface of the nonmagnetic material.

Abstract: There is provided a method of manufacturing a liquid discharge head, including: forming a stacked body having a structure and a protective member stacked on the structure, providing a first mask on an upper surface of the protective member to cover a through hole; forming a protective film by an atomic layer deposition on a surface defining a liquid flow channel of the stacked body provided with the first mask; and removing the first mask after forming the protective film.

Abstract: A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.