Abstract: The back surface of a BOE (binary optical element) having a binary optical structure formed thereon is coated with a resist film. Chromium is then deposited on the BOE by means of electron beam evaporation so as to form an island structure with an island size of about 50 nm and an island-to-island distance of about 80 nm. The BOE is then etched with an etchant to a depth of 55 nm using the island structure as a mask thereby forming a pillar-shaped microstructure. The island structure used as the mask is removed by means of wet etching using an etchant, and the resist film on the back surface of the BOE is removed using a resist remover. Thus, a microstructure is obtained which has antireflection capability allowing suppression of reflection to a level of 1% or less for a wavelength of 248 nm.

Abstract: In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.

Abstract: In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.

Abstract: Disclosed is a method of manufacturing a diffractive optical element, including a process for forming a resist mask of blazed shape upon a substrate and for etching the substrate by use of the resist mask so that the blazed shape is transferred to the substrate The method includes a process for forming, before the etching, an element being effective to prevent a taper shape, to be produced at an edge of the blazed shape of the resist mask, from being transformed to the substrate.

Abstract: An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements.