Abstract: A substrate processing apparatus includes a substrate holder, a rotational driving unit, a cover body, a transfer mechanism, a cleaning liquid supply and a controller. The substrate holder is configured to hold a substrate. The rotational driving unit is configured to rotate the substrate holder. The cover body is configured to cover a top surface of the substrate held by the substrate holder. The transfer mechanism is configured to transfer a cleaning jig to the substrate holder. The cleaning liquid supply is configured to supply a cleaning liquid toward a bottom surface of the cleaning jig held by the substrate holder. The controller is configured to control the rotational driving unit to rotate the substrate holder. The cleaning jig is provided with at least one hole through which the cleaning liquid discharged from the cleaning liquid supply passes toward the cover body.

Abstract: A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

Abstract: A substrate processing apparatus 5 includes a holder 52 (52A), a supply 53 and a cover body 6. The holder 52 (52A) is configured to attract and hold a substrate W. The supply 53 is configured to supply a heated plating liquid to the substrate W attracted to and held by the holder 52 (52A). The cover body 6 is configured to cover the substrate W attracted to and held by the holder 52 (52A), and heat the plating liquid on the substrate W by using a heating device 63 provided in a ceiling member 61 thereof facing a top surface of the substrate W. The holder 52 (52A) includes protrusions 130 projecting from a facing surface 110 thereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.

Abstract: A substrate liquid processing method includes holding a substrate W with a substrate holder 52; supplying a plating liquid L1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

Abstract: A substrate liquid processing method includes preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.

Abstract: A substrate liquid processing apparatus configured to supply a plating liquid to a substrate includes a substrate holder configured to hold the substrate; a plating liquid sending device configured to send the plating liquid to a first flow path; a temperature controller connected to the plating liquid sending device via the first flow path and configured to control a temperature of a fluid supplied through the first flow path; an extrusion fluid sending device configured to send an extrusion fluid different from the plating liquid to the first flow path; and a discharge device connected to the temperature controller and configured to discharge a fluid supplied from the temperature controller.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

Abstract: A substrate liquid processing apparatus includes a substrate holder 52 configured to attract, hold and rotate a substrate W; a heating device configured to heat the substrate holder 52 from an outside thereof; a plating liquid supply 53 configured to supply a plating liquid L1 onto the substrate W being rotated while being held by the substrate holder 52; and a controller 3 configured to control operations of the substrate holder 52, the heating device and the plating liquid supply 53. The controller 3 controls the heating device to heat the substrate holder 52 to equal to or higher than 50° C. before the substrate W is held by the substrate holder 52.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Abstract: A plating method includes preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate.

Abstract: A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.