Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

Abstract: A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.

Abstract: A Plating method includes a first plating process S21 of supplying a first plating liquid to a substrate 2 having a recess 12 and forming a first plating layer 13; and a second plating process of supplying a second plating liquid to the substrate 2 and forming a second plating layer 14 on the first plating layer 13 after the first plating process S21. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process S21 includes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrate 2 by rotating the substrate 2 at a first speed and a process of rotating the substrate 2 at a second speed and at a third speed repeatedly.

Abstract: There is provided a substrate processing apparatus including: a substrate holder configured to hold a substrate on which a resist pattern is formed; a rinse solution supply unit configured to supply a rinse solution onto the substrate held by the substrate holder; a vapor supply unit configured to supply vapor of a first processing solution, which hydrophobicizes the resist pattern, onto the substrate on which the rinse solution is supplied from the rinse solution supply unit; and a rinse solution removing unit configured to remove the rinse solution from the substrate in an atmosphere including the vapor of the first processing solution supplied from the vapor supply unit.

Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Abstract: A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.

Abstract: A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

Abstract: A plating apparatus can suppress a time period during which a plating liquid is used in a plating from being reduced. In the plating apparatus 1, after a plating liquid supply unit 53 supplies, to a substrate W1, a plating liquid which exerts a preset plating performance within a preset concentration range and which has an initial temperature adjusted to be lower than a preset plating temperature; and an initial concentration adjusted such that a concentration of the plating liquid at a moment when a temperature of the plating liquid has reached the preset plating temperature is equal to or higher than a lower limit of the preset concentration range and equal to or below a median value of the preset concentration range, a plating liquid heating unit 63 heats the plating liquid supplied to the substrate W1 to the preset plating temperature.

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the substrate 2 and has an opening 22. The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2, and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unit 33 is configured to be overlapped with the opening 22 of the top plate 21 at the discharge position.

Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.

Abstract: A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold a substrate W; a discharging device 21 configured to discharge a plating liquid 35 toward the substrate W held by the substrate holding device 110; and a plating liquid supplying device 30 connected to the discharging device 21 and configured to supply the plating liquid 35 to the discharging device 21. A gas supplying device 170 is configured to heat a heating gas G having a higher specific heat capacity than air and supply the heated heating gas G toward the substrate W held by the substrate holding device 110. Further, a controller 160 is configured to control at least the discharging device 21, the plating liquid supplying device 30, and the gas supplying device 170.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.