Patents by Inventor Yuichiro Yamashita

Yuichiro Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10991747
    Abstract: Image sensor structures are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure surrounding the light sensing region and having an opening region in a top view and a backside isolation structure formed at the backside of the substrate and encompassing the light-sensing region and vertically overlapping the opening region. The image sensor structure further includes a first gate structure formed over the front side of the substrate and overlapping the opening region and the front side isolation structure and a storage node in the substrate adjacent to the first gate structure. In addition, the storage node extends into the opening region.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yuichiro Yamashita, Chun-Hao Chuang, Hirofumi Sumi
  • Patent number: 10951866
    Abstract: An image sensor device includes a plurality of color filter units arranged in an array, each of the color filter units comprising an array of n*m color filters, and n and m are integers equal to or greater than 3. The plurality of color filter units includes a plurality of first color filter units, a plurality of second color filter units, and a plurality of third color filter units. The color filters of the first color filter units are transmissive to light beams within a first wavelength range, the color filters of the second color filter units are transmissive to light beams within a second wavelength range, and the color filters of the third color filter units are transmissive to light beams within a third wavelength range.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventor: Yuichiro Yamashita
  • Publication number: 20200321372
    Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Inventors: MASAHIRO KOBAYASHI, Yuichiro Yamashita
  • Publication number: 20200303433
    Abstract: Image sensor structures are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure surrounding the light sensing region and having an opening region in a top view and a backside isolation structure formed at the backside of the substrate and encompassing the light-sensing region and vertically overlapping the opening region. The image sensor structure further includes a first gate structure formed over the front side of the substrate and overlapping the opening region and the front side isolation structure and a storage node in the substrate adjacent to the first gate structure. In addition, the storage node extends into the opening region.
    Type: Application
    Filed: June 4, 2020
    Publication date: September 24, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yuichiro YAMASHITA, Chun-Hao CHUANG, Hirofumi SUMI
  • Publication number: 20200303431
    Abstract: An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalk form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalk and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Inventors: ALEXANDER KALNITSKY, JHY-JYI SZE, DUN-NIAN YAUNG, CHEN-JONG WANG, YIMIN HUANG, YUICHIRO YAMASHITA
  • Publication number: 20200279969
    Abstract: A single photon avalanche diode (SPAT) image sensor is disclosed. The SPAT) image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.
    Type: Application
    Filed: May 21, 2020
    Publication date: September 3, 2020
    Inventors: TZU-JUI WANG, JHY-JYI SZE, YUICHIRO YAMASHITA, KUO-CHIN HUANG
  • Patent number: 10727266
    Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: July 28, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita
  • Publication number: 20200227582
    Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface; wherein the substrate includes a sensing region, and the sensing region includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the back surface of the substrate; a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; and a first layer doped with dopants of the first conductivity type between the common node and the sensing node.
    Type: Application
    Filed: March 27, 2020
    Publication date: July 16, 2020
    Inventor: YUICHIRO YAMASHITA
  • Patent number: 10700117
    Abstract: Methods for forming an image sensor structure are provided. The method includes forming a light-sensing region in a substrate and forming a storage node adjacent to light-sensing region in the substrate. The method further includes forming a front side isolation structure partially surrounding an upper portion of the light-sensing region and forming a trench fully surrounding a bottom portion of the light-sensing region to expose a bottom surface of the front side isolations structure. The method further includes forming a backside isolation structure in the trench.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: June 30, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yuichiro Yamashita, Chun-Hao Chuang, Hirofumi Sumi
  • Patent number: 10692914
    Abstract: An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalls form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalls and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: June 23, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Alexander Kalnitsky, Jhy-Jyi Sze, Dun-Nian Yaung, Chen-Jong Wang, Yimin Huang, Yuichiro Yamashita
  • Patent number: 10672934
    Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: June 2, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tzu-Jui Wang, Jhy-Jyi Sze, Yuichiro Yamashita, Kuo-Chin Huang
  • Patent number: 10636930
    Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface; wherein the substrate includes a sensing region, and the sensing region includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the back surface of the substrate; a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; and a first layer doped with dopants of the first conductivity type between the common node and the sensing node.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: April 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventor: Yuichiro Yamashita
  • Patent number: 10636828
    Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: April 28, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita
  • Publication number: 20200098800
    Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
    Type: Application
    Filed: November 26, 2019
    Publication date: March 26, 2020
    Inventors: MASAHIRO KOBAYASHI, Yuichiro Yamashita
  • Publication number: 20200075645
    Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.
    Type: Application
    Filed: November 11, 2019
    Publication date: March 5, 2020
    Inventors: Masaaki Minowa, Hidekazu Takahashi, Yuichiro Yamashita, Akira Okita
  • Publication number: 20200066770
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.
    Type: Application
    Filed: November 5, 2019
    Publication date: February 27, 2020
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 10510789
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 10504947
    Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: December 10, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Minowa, Hidekazu Takahashi, Yuichiro Yamashita, Akira Okita
  • Publication number: 20190355775
    Abstract: An image sensor is disclosed. The image sensor includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the front surface of the substrate; and a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; an interconnect structure, wherein the front surface of the substrate faces the interconnect structure; a distributed Bragg reflector (DBR) between the front surface of the substrate and the interconnect structure; a first contact plug passing through the DBR and coupling the common node to the interconnect structure; and a second contact plug passing through the DBR and coupling the sensing node to the interconnect structure.
    Type: Application
    Filed: August 1, 2019
    Publication date: November 21, 2019
    Inventor: YUICHIRO YAMASHITA
  • Patent number: 10418398
    Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: September 17, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki