Abstract: A substrate inspection system includes: a charged particle beam irradiation part; an electron image detecting part; a mapping projecting part which projects the secondary and/or reflected charge particle generated from a substrate on the electron image detecting part; and a control part. The electron image detecting part includes a charged particle multiplying device which has an entrance surface for the secondary and/or reflected charged particle, and an image grabbing element having a fluorescent body with a light receiving surface to receive the multiplied secondary and/or reflected charged particle and a fluorescent surface on which an optical image appears. The control part causes the fluorescent surface of the fluorescent body to be grounded and applies a first negative potential to the entrance surface of the charged particle multiplying device.

Abstract: A charged particle beam lithography system includes a charged particle beam emitter which generates a charged particle beam and which emits the charged particle beam to a wafer, the charged particle beam emitter emitting the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam; an illumination optical system which adjusts a beam radius of the charged particle beam; a cell aperture having a cell pattern of a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field so as to enter a desired cell pattern of the cell aperture, and which deflects the charged particle beam which passes through the cell pattern back to an optical axis thereof; a demagnification projection opti

Abstract: A hard disk controller (HDC) receives a request an operation to retrieve, read, or write data using a magnetic disk. An MPU determines the contents of the received request, and transfers to an IC such as a head IC (HDIC), a PRML read channel process (RDC), a servo-demodulator (SV-DEMO), etc. set values of minimal parameters to control the parameters whose settings are to be changed to control the operations of a storage device to perform the processes for the request.

Abstract: A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

Abstract: A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.

Abstract: A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy

Abstract: A thickness measuring system comprises: an eddy current loss measuring sensor having an exciting coil for receiving a high frequency current to excite a high frequency magnetic field to excite an eddy current in a conductive film, and a receiving coil for outputting the high frequency current which is influenced by an eddy current loss caused by the eddy current; an impedance analyzer for measuring the variation in impedance of the eddy current loss measuring sensor, the variation in current value of the high frequency current or the variation in phase of the high frequency current on the basis of the high frequency current outputted from the receiving coil; an optical displacement sensor for measuring the distance between the conductive film and the eddy current loss measuring sensor; and a control computer including a thickness calculating part for calculating the thickness of the conductive film on the basis of various measured results of the impedance analyzer and optical displacement sensor, and the eddy

Abstract: A charged particle beam system comprising a charged beam source, a condenser lens, a scanning deflecting device, an objective lens and a secondary electron detector further comprises a slant observing deflecting device arranged between the objective lens and a sample. The slant observing deflecting device deflects charged particle beams immediately before the surface of the sample, to cause the charged particle beams to be slantingly incident on the sample. The deflection angle of the charged particle beams is controlled by a DC current component which is inputted to the slant observing deflecting device. The irradiation position shift of the charged particle beams due to the slant deflection is corrected and controlled by feeding an input value of the slant observing deflecting device and the slant angle of the charged particle beams back to the input value of the scanning deflecting device.

Abstract: A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.

Abstract: An electron beam lithography system 10 comprises an electron gun including a rectangular cathode 1 having an emission surface having an aspect ratio of other than 1, an illumination optical system 3 of an asymmetric lens system including multipole lenses Qa1 and Qa2, a CP aperture 5, and a projection optical system 8 of a symmetric lens system including multipole lenses Qb1 through Qb4.

Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

Abstract: In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

Abstract: A district assisting system for making a plan of a waste disposal network, Icons (I1 to I3) indicating the kinds of waste are displayed on a monitor screen. The operator selects, e.g., a gasification melting furnace from a disposal facility item box (W2), creates an icon (I4) in a plan sheet box (W1), and draw a line (L1) linking the icon (I1) to the icon (I4). When the operator clicks the icon (I4), the kinds and amounts of residual and valuable substances produced when combustible waste is processed in a gasification melting furnace are displayed. The operator selects the next disposal facility according to the displayed unconnected residual substances, creates an icon of the selected facility on the monitor screen, and links the icon to the icon (I4). Thus a plan is completed.

Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

Abstract: A substrate inspection system includes: a substrate mounting part which mounts thereon a substrate to be inspected; a charged particle beam irradiation part which generates a charged particle beam to irradiate the substrate with the charged particle beam, the irradiation of the charged particle beam causing a secondary charged particle and/or a reflected charged particle to generate from the substrate; an electron image detecting part which detects an electron image which is formed by the secondary charged particle and/or the reflected charged particle and is indicative of a physical property of the surface part of the substrate and which outputs a picture signal of the image; the electron image detecting part including a charged particle multiplying device which multiplies the secondary charged particle and/or the reflected charged particle, and an image grabbing element having a fluorescent body which receives the multiplied secondary charged particle and/or reflected charged particle as the electron image

Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

Abstract: A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle be

Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Abstract: A charged particle beam system comprising a charged beam source, a condenser lens, a scanning deflecting device, an objective lens and a secondary electron detector further comprises a slant observing deflecting device arranged between the objective lens and a sample. The slant observing deflecting device deflects charged particle beams immediately before the surface of the sample, to cause the charged particle beams to be slantingly incident on the sample. The deflection angle of the charged particle beams is controlled by a DC current component which is inputted to the slant observing deflecting device. The irradiation position shift of the charged particle beams due to the slant deflection is corrected and controlled by feeding an input value of the slant observing deflecting device and the slant angle of the charged particle beams back to the input value of the scanning deflecting device.