Abstract: An inspection apparatus using an electron beam according to this invention has an electron beam irradiation unit (1-10) for irradiating a sample (11) with an electron beam (31), a projection optical unit (16-21) for forming a one- and/or two-dimensional image or images of secondary and reflected electrons (32) projected in accordance with changes in shape, material, and electrical potential of the sample surface, an electron beam detection unit (22-27) for outputting a detection signal on the basis of the one- and/or two-dimensional image or images, an image display unit (30) for displaying the one- and/or two-dimensional image or images of the sample surface upon receiving the detection signal, and an electron beam deflection unit (27, 43-44) for changing the incident angle of the electron beam coming from the electron beam irradiation unit onto the sample, and guiding the received secondary and reflected electrons to the mapping projection optical unit.

Abstract: An apparatus having an electron beam irradiation unit (11) for emitting an electron beam having a rectangular cross section from a linear cathode (12), and irradiating the inspection region (1a) of a sample (16) with the electron beam, a secondary optical system projection optical unit (17) for forming an image (defined by secondary and reflected electrons produced from the inspection region (1a) irradiated with the electron beam) onto an electron beam detection unit in a predetermined scale of enlargement, and an electron beam detection unit (22) for generating and outputting a detection signal in accordance with the formed image. The electron beam irradiation unit (11) forms the electron beam to have substantially the same area as the inspection region (1a) of the sample surface (16), and irradiates the inspection region (1a) with a single irradiation of the formed electron beam. In this way, the problems of conventional scanning electron microscopes, (i.e.

Abstract: A magnetic recording and reproducing apparatus having a reproducing circuit structure which improves a high frequency characteristic of a reproduction signal output from a read head. The read head reads information recorded on a recording medium. A first amplifying circuit amplifies a reproduction signal generated by the read head. A second amplifying circuit, which comprises a high-frequency amplifying circuit, amplifies the reproduction signal amplified by the first amplifying circuit in a high-frequency amplifying manner. The first amplifying circuit and the second amplifying circuit together constitute a cascode amplifier. A third amplifying circuit amplifies the reproduction signal amplified by the second amplifying circuit. A reproducing circuit reproduces the reproduction signal amplified by the third amplifying circuit.

Abstract: A lithography method is applied to a lithography system comprising a charged particle beam generation section for generating a charged particle beam, a mask stage for holding a transfer mask to which the charged particle beam is applied, and a wafer stage for holding a wafer to be processed so as to face the charged particle beam generation section via the transfer mask. A fluorescent film is disposed between the transfer mask and the wafer coated with a photoresist thereon. When the fluorescent film is irradiated with the charged particle beam which passes through an opening of the transfer mask, an ultraviolet light is emitted from the fluorescent film and applied onto the photoresist film formed on the wafer.

Abstract: A substrate inspecting system 60 observes and inspect a semiconductor wafer pattern by irradiating the surface of the semiconductor wafer 11 with electron beams 31, and making a projection unit project in enlargement secondary electrons, reflected electrons and backward scattered electrons generated therefrom in the form of secondary electron beams 32 on an undersurface of an electron beam detecting unit 61, and form an image thereon. The substrate inspecting system 60 includes a parallel-plate type energy filter 33 in a projection system. The present invention discloses a substrate inspecting apparatus capable of detecting a voltage contrast defect on a sample with a high accuracy by separating the secondary electron beams and fetching a secondary electron beam having an energy over a predetermined value, and of quantitatively measuring this defect, a substrate inspecting system having this apparatus, and a substrate inspecting method.

Abstract: A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: A scanning electron beam is formed as a rectangular electron beam. The electro-optical system which forms this rectangular beam has a rectangular-cathode light source and a quadrupole lens system. This rectangular beam is scanned in its short-axis (X-axis) direction by a deflection system while a stage is moved in its long-axis (Y-axis) direction to achieve scanning of the surface of the wafer under inspection. The rectangular beam corresponds to a number of circular beams arranged in a row. Therefore, pixel signals corresponding to a number of pixels equal to the aspect ratio of the rectangular beam (ratio of the length in the long-axis direction to the length in the short-axis direction) are simultaneously output.

Abstract: In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis.

Abstract: A charged beam apparatus comprises a source tank provided outside the column and containing a plasma source, a plasma generating apparatus for generating plasma from a plasma source supplied from the source tank, gate valves and an exhausting pump for introducing plasma generated by the plasma generating apparatus into the column and for exhausting the plasma therefrom, and an O-ring for restricting a passage of plasma in the column such that those portions of cleaning portions to be cleaned to which internal contaminants stick are mainly exposed to plasma. Therefore, it is possible to generation of an oxide film, a fluoride film, or the likes which cause drifting can be restricted.

Abstract: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape.A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

Abstract: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape. A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber.

Abstract: In a pulse beam forming apparatus, there are disposed in order a beam generating device for generating a charged particle beam having a circular cross section, a beam elongating device for elongating the charged particle beam in cross section, a deflecting device for deflecting the charged particle beam in a direction perpendicular to the longitudinal direction of the cross section, an aperture for cutting the charged particle beam, and a beam reshaping device for reshaping the charged particle beam into one having a circular cross section.

Abstract: A magnetic immersion field emission electron gun has a vacuum vessel having a central axis in a predetermined direction, a cathode arranged along the central axis of the vacuum vessel for generating an electron beam, an anode for forming an electron beam path by accelerating a generated electron beam in the central axis direction, an electrostatic lens arranged between the cathode and anode for generating an electric field which focuses an accelerated electron beam toward the central axis, a magnetic field generating element arranged around the electron beam path for generating a magnetic field for focusing the electron beam in order to preventing a diameter of the electron beam from expansion by an aberration of the electrostatic lens, and a moving mechanism for moving the magnetic field generating element at a position where a peak point of a strength of the magnetic field generated by the magnetic field generating element coincides with a portion where the aberration of the electrostatic lens becomes most

Abstract: An optic column is provided to obtain a micro beam in simple structure. The optic column has a line cathode and multi-pole lenses arranged in three steps. A beam orbit in the major axis direction (X direction) and a beam orbit in the minor axis direction (Y direction) cross each other on the image plane. A ratio of magnification Mx of X-directional orbit to magnification My of Y-directional orbit is coincident with a ratio of width W to length H of the line cathode.

Abstract: An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.

Abstract: There is disclosed a method of irradiating low-energy electrons that has the steps of irradiating a primary electron beam from a primary electron beam irradiation portion onto a secondary electron emission portion to emit a secondary electron beam, accelerating the emitted secondary electron beam, removing high-energy components from that accelerated secondary beam, and decelerating the secondary electron beam without the high-energy components into a focus. And there is also disclosed an apparatus for irradiating low-energy electron that has a primary electron beam irradiating section, a secondary electron emitting section which receives the primary electron beam and emits a secondary electron beam, a secondary electron beam accelerating section, energy analyzing section which removes high-energy components from the accelerated secondary electron beam, to obtain low-energy secondary electrons, and deceleration section for decelerating the low-energy secondary electrons into a focus.

Abstract: A novel technique suitable for inspection or examination of the surface condition of a substrate such as a semiconductor wafer. First is one irradiates a light e.g. a laser beam on a substrate surface to focus a scattered light therefrom. Next detects the scattered light focused e.g. with a photomultiplier tube, thus to inspect the substrate surface. When the detection of the scattered light is thus carried out, correction means e.g. a circuit for controlling a voltage applied to the photomultiplier tube, a filter having a variable light-screening factor, a movable iris or an amplification factor adjustment circuit etc. is used to correct the detection sensitivity in accordance with the reflectivity of the substrate surface. Practically, such a corrective operation is carried out on the basis of the intensity of a scattered light or a regularly reflected light from the substrate surface.