Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A dual mode charge control method includes steps of: detecting an input voltage of the resonance tank, a resonance current of the resonance tank, an output current of the load, and an output voltage of the load; performing a single-band charge control when determining a light-load condition or a no-load condition of the load according to the output current; compensating the output voltage to generate an upper threshold voltage in the single-band charge control, and acquiring a resonance voltage by calculating the resonance current by a resettable integrator; comparing the resonance voltage and the upper threshold voltage to generate a first control signal; generating a second control signal complementary to the first control signal by a pulse-width modulation duplicator; providing the first control signal and the second control signal to respectively control a first power switch and a second power switch of the resonance circuit.

Abstract: An electronic device and a related tiled electronic device are disclosed. The electronic device includes a protective layer, a circuit structure, a sensing element and a control unit. The circuit structure is disposed on the protective layer and surrounds the sensing element. The control unit is disposed between the circuit structure and the protective layer and electrically connected to the sensing element. The protective layer surrounds the control unit and contacts a surface of the circuit structure.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: The present invention provides a display device, which includes a frame having an accommodating cavity and a display module disposed in the accommodating cavity. The display module includes a first light source, an optical unit, an imaging unit arranged on a side of the optical unit facing away from the first light source, and a lens array arranged on a side of the imaging unit facing away from the first light source. Corresponding to a preset pattern, light emitted by the first light source passes through the optical unit, the imaging unit and the lens array to form a default floating image in a floating display area outside the accommodating cavity. In addition, the present invention also provides a non-contact key and an input device including the above display module.

Abstract: A semiconductor device includes a first die having a first bonding layer; a second die having a second bonding layer disposed over and bonded to the first bonding layer; a plurality of bonding members, wherein each of the plurality of bonding members extends within the first bonding layer and the second bonding layer, wherein the plurality of bonding members includes a connecting member electrically connected to a first conductive pattern in the first die and a second conductive pattern in the second die, and a dummy member electrically isolated from the first conductive pattern and the second conductive pattern; and an inductor disposed within the first bonding layer and the second bonding layer. A method of manufacturing a semiconductor device includes bonding a first inductive coil of a first die to a second inductive coil of a second die to form an inductor.

Abstract: A respiratory status classifying method is for classifying as one of at least two respiratory statuses and includes an original physiological parameter inputting step, an original chest image inputting step, a characteristic physiological parameter generating step, a characteristic chest image generating step, a training step and a classifier generating step. The characteristic chest image generating step includes processing at least a part of the original chest images, segmenting images of a left lung, a right lung and a heart from each of the original chest images that are processed, and enhancing image data of the images being segmented, so as to generate a plurality of characteristic chest images. The training step includes training two respiratory status classifiers using a plurality of characteristic physiological parameters and the characteristic chest images by at least one machine learning algorithm.

Abstract: A respiratory status classifying method is for classifying as one of at least two respiratory statuses and includes a training's physiological parameter inputting step, a training's chest image inputting step, a characteristic physiological parameter generating step, a characteristic chest image generating step, a training step and a classifier generating step. The characteristic chest image generating step includes processing at least a part of the training's chest images, segmenting images of a left lung, a right lung and a heart from each of the training's chest images that are processed, and enhancing image data of the images being segmented, so as to generate a plurality of characteristic chest images. The training step includes training a plurality of characteristic physiological parameters and the characteristic chest images by at least one machine learning algorithm.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate structure is disposed on the first barrier layer. The gate structure includes a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. The first P-type gallium nitride layer is disposed on the first barrier layer. The second barrier layer is disposed on the first P-type gallium nitride layer. The second P-type gallium nitride layer is disposed on the second barrier layer. A width of the second P-type gallium nitride layer is smaller than a width of the first P-type gallium nitride layer. The spacer is disposed on a sidewall of the second P-type gallium nitride layer.

Abstract: A method for forming a semiconductor structure is provided. The method includes providing a semiconductor substrate with a plurality of floating gates on it, and an isolation structure between the floating gates. The method includes performing a first etching process to recess the isolation structure and to form an opening between the floating gates to expose a portion of the sidewalls of the floating gates. The method includes conformally forming a liner in the opening. The method includes performing an ion implantation process to implant a dopant into the isolation structure below the liner. The method includes performing a second etching process to remove the liner and a portion of the isolation structure below the liner, thereby giving the bottom portion of the opening a tapered profile.

Abstract: This disclosure provides a semiconductor structure and a method of forming buried field plate structures. The semiconductor structure includes a substrate, buried field plate structures, and a gate. The substrate incudes a first surface and a second surface opposite the first surface. Each of the buried field plate structures include a conductive structure and an insulation structure surrounding the conductive structure. The gate is embedded in the substrate and extend into the substrate from the first surface of the substrate, wherein the gate is configured between the two neighboring buried field plate structures. The conductive structure includes portions arranging along a direction perpendicular to the first surface of the substrate and having different widths in a direction parallel to the first surface of the substrate.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a substrate and a gate structure. The gate structure is disposed in the substrate and includes a shielded gate, a control gate, and a plurality of insulating layers. The shielded gate includes a bottom gate and a top gate. The bottom gate includes a step structure consisting of a plurality of electrodes. A width of the electrode is smaller as the electrode is farther away from the top gate, and a width of the top gate is smaller than a width of the electrode closest to the top gate. The control gate is disposed on the shielded gate. A first insulating layer is disposed between the shielded gate and the substrate. A second insulating layer is disposed on the shielded gate. A third insulating layer is disposed between the control gate and the substrate.

Abstract: A method of a flash memory controller coupled between a flash memory and an electronic device is provided. The flash memory has a plurality of blocks each having a plurality of pages. The method includes: detecting whether a data unit is formed by a repeated pattern, the data unit being transmitted from the electronic device and to be written into the flash memory or the data unit being read from the flash memory; and making a record of the repeated pattern at a field of the specific table if determining that the data unit is formed by the repeated pattern.

Abstract: A circuit comparing method includes the following operations: detecting several connection relationships between all starting points and all ending points corresponding to all starting points of a first circuit diagram; detecting several connection relationships between all starting points and all ending points corresponding to all starting points of a second circuit diagram; determining at least one difference between several connection relationships of the first circuit diagram and several connection relationships of the second circuit diagram; and outputting the at least one difference.

Abstract: A method of a flash memory controller coupled between a flash memory and an electronic device is provided. The flash memory has a plurality of blocks each having a plurality of pages. The method includes: detecting whether a data unit is formed by a repeated pattern, the data unit being transmitted from the electronic device and to be written into the flash memory or the data unit being read from the flash memory; and making a record of the repeated pattern at a field of the specific table if determining that the data unit is formed by the repeated pattern.

Abstract: A circuit comparing method includes the following operations: detecting several connection relationships between all starting points and all ending points corresponding to all starting points of a first circuit diagram; detecting several connection relationships between all starting points and all ending points corresponding to all starting points of a second circuit diagram; determining at least one difference between several connection relationships of the first circuit diagram and several connection relationships of the second circuit diagram; and outputting the at least one difference.

Abstract: An air-conditioning device includes a plurality of duct modules and a power module. The duct modules each have a temperature-adjusting unit, an air flow-guiding unit and an energy transmission module. The temperature-adjusting unit is disposed at the second end of the duct module, and has opposing first and second side surfaces. The air flow-guiding unit is disposed at the duct module. The energy transmission module is disposed between the temperature-adjusting unit and the air flow-guiding unit. The power module provides operational power for the duct modules. The air flow-guiding unit guides air flow to enter from the first end of the duct modules. The energy transmission strength of the air flow is enhanced from the energy transmission module. The air flow passes through the first or second side surface of the temperature-adjusting unit, and exists from the second end of the duct modules.

Abstract: An air conditioning device includes a duct module and a heat exchange module. The duct module includes a temperature control unit disposed at a second region of the duct module, a first air flow guide unit disposed between a first region and the second region of the duct module, and a first liquid energy conducting element disposed at the first region of the duct module. The heat exchange module has a delivery duct, an accommodating case, a driver unit, a second air flow guide unit, a heat exchanger and a second liquid energy conducting element. The driver unit drives condensed water to pass through the delivery duct. The second air flow guide unit provides an air flow to the heat exchanger for exhausting waste heat. The second liquid energy conducting element performs heat exchange to cool down.