Abstract: In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

Abstract: An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

Abstract: A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coating is formed not only on a light receiving area in a divided photodiode area but on a division area including a junction area between a division section outside the light receiving area for dividing a photodiode and a cathode. A polycrystalline silicon film is formed so as to cover the antireflection coating. Accordingly, the antireflection coating on the junction area between the division section outside the light receiving area and the cathode is protected against, for example, etching by the polycrystalline silicon film. As a result, the appearance of a crystal defect, a change in impurity concentration, or the like is suppressed in this area.

Abstract: A method of manufacturing a high-speed operable and broadband operable semiconductor device where a light-receiving element section, a CMOS element and a bipolar transistor element having a double polysilicon structure are formed on one chip. By performing the same conductivity type ion implantation, the same conductivity type diffusion layers (examples thereof include N-type diffusion layers, an anode diffusion layer, P-type well diffusion layer and collector diffusion layer as P-type diffusion layers, a cathode diffusion layer and collector contact diffusion layer as N-type diffusion layers, a source/drain diffusion layer and base Poly-Si diffusion layer as N-type diffusion layers, and a source/drain diffusion layer and base Poly-Si diffusion layer as P-type diffusion layers) are simultaneously formed in two or more regions among a light-receiving element region, CMOS element region and bipolar transistor element region of a semiconductor substrate or of an epitaxial layer over the semiconductor substrate.

Abstract: A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coating is formed not only on a light receiving area in a divided photodiode area but on a division area including a junction area between a division section outside the light receiving area for dividing a photodiode and a cathode. A polycrystalline silicon film is formed so as to cover the antireflection coating. Accordingly, the antireflection coating on the junction area between the division section outside the light receiving area and the cathode is protected against, for example, etching by the polycrystalline silicon film. As a result, the appearance of a crystal defect, a change in impurity concentration, or the like is suppressed in this area.

Abstract: A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

Abstract: A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

Abstract: A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

Abstract: A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

Abstract: A fuel reforming apparatus is provided for generating a hydrogen-rich gas. The fuel reforming apparatus includes an evaporator comprising an evaporation chamber for evaporating the fuel vapor by evaporating a hydrocarbon fuel-water mixture by an evaporator using a combustion gas formed in a combustor; a heating chamber for heating the fuel vapor by a combustion gas output from the evaporation chamber; and a guiding path for guiding the combustion gas output from the evaporation chamber to the heating chamber along the floor of the evaporating room. In the heating chamber, the fuel vapor generated in the evaporation chamber is uniformly heated in an atmosphere with a homogeneous temperature of the combustion gas output from a heating medium tube, while the fuel vapor is circulating in the vapor tube.

Abstract: In a heat processing system for a fuel cell comprising a catalytic combustor 23 that has supplied and combusts an anode off gas and a cathode off gas discharged from a fuel cell stack 21, a vaporizer 24 that has introduced therein a combustion gas produced in the catalytic combustor 23, heats a raw fuel for a fuel cell by using the heat of the combustion gas to make it a fuel vapor, an off gas heater that heats the anode off gas and the cathode off gas by a combustion gas used in the vaporizer 24, a reformer 25 that reforms the fuel vapor produced by the vaporizer 24 and provides the fuel gas to the fuel cell stack 21, wherein the combustion gas temperature of the catalytic combustor 23 is set based on the required fuel vapor temperature, the flow volume of the cathode off gas is set and adjusted depending on this combustion gas temperature, and the set combustion gas temperature is compensated based on the required fuel vapor temperature and the actual fuel vapor temperature.

Abstract: A facsimile machine including a first facsimile-data transmitter including a first connector connectable to an external computer via a first communication line, and a second connector connectable to a second facsimile-data transmitter via a second communication line, the first facsimile-data transmitter transmitting, to the external computer via the first communication line, facsimile data transmitted from the second facsimile-data transmitter via the second communication line, the machine also including a facsimile-data receiver, and a control device which controls the first facsimile-data transmitter not to transmit the facsimile data to the external computer, and controls the facsimile-data receiver to receive the facsimile data, in place of the external computer.

Abstract: A brazing material that has a low melting point and can braze aluminum materials at a low temperature with a good wetting property is disclosed. The brazing material can include a matrix composed of Zn, a Zn--Al alloy or a Al--Zn--Si alloy having a low melting point each preferably containing 0.001 to 3.0 wt % of rare-earth element. When such a brazing material is used, aluminum materials can be brazed at a temperature of 580.degree. C. or below.

Abstract: A process for brazing a die-cast aluminum material, wherein a die-cast aluminum material produced at a gate speed of 20 m/s or higher is used to be brazed at a brazing temperature of 500.degree. C. or lower. Further, it is preferred that the die-cast aluminum material is produced under a casting pressure of 600 kgf/cm.sup.2 or lower, or that the die-cast aluminum material is produced while depressurizing a mold. Brazing may as well be conducted using a brazing filler metal material composed of 6 to 24 wt. % of Al and the balance consisting of Zn and impurities. In the foregoing manner, the die-cast aluminum material can be brazed by heating it to a high temperature.

Abstract: Transmission, speed at which data is transmitted over a digital transmission line between a transmission device and a remote device, is set by transmitting an inquiry command to the remote device at a predetermined transmission speed; receiving, from the remote device, a response to the inquiry command; determining based on the content of the response any transmission speeds common between the remote device and the transmission device; and setting transmission speed at which transmission between the transmission device and a remote device is to be performed to one of the transmission speeds common between the remote device and the transmission device.

Abstract: A facsimile machine including a first facsimile-data transmitter and/or a first facsimile-data receiver, a first telephone set, a data receiver including a connector connectable to an external computer for receiving, from the computer, designating data designating a second telephone set, and a calling device which calls the second telephone set designated by the designating data, so as to connect the first telephone set to the second telephone set via a communication line.

Abstract: A facsimile machine including a first facsimile-data receiver including a connector connectable to an external computer for receiving, from the computer, facsimile data including image data representing an image, and receiver-designating data designating a second facsimile-data receiver to which the facsimile data are transmitted, a facsimile-data transmitter which transmits the facsimile data to the second facsimile-data receiver designated by the receiver-designating data, a recorder which records, on a recording medium, the image represented by the image data of the facsimile data, a memory which stores self-designating data designating the first facsimile-data receiver, the receiver-designating data and the self-designating data being of same kind of data as each other, so that the receiver-designating data are comparable with the self-designating data, and a control device which controls the recorder to record the image represented by the image data when the receiver-designating data are identical with t

Abstract: A request command is transmitted from a computing device to a facsimile device to request function list data of the facsimile device, representing adjustable functions, possible function settings, and/or current function settings of the facsimile device. The facsimile device receives the request command and responds by sending a description of its functions, corresponding possible function settings, and/or current function settings as function list data to the computing device. The function list data and settings are displayed at the computing device when a remote setup routine is executed, and a user can identify the functions and function setting options of the connected facsimile, and set function settings by an input device. The computing device sends the desired function settings to the facsimile device, and the facsimile device changes its function settings according to those received.

Abstract: In this facsimile machine, it is determined whether data to be stored in a RAM is image data, and, if the data is image data, a normal cluster for writing the image data into is ensured. If the data is not image data, a defective cluster is selected, and the data is written into the defective cluster. In this case, if no defective cluster is selected, a normal cluster is selected, and the data is written into the normal cluster. Upon termination of the data writing operation, the data is managed on a classification (kind) basis. Accordingly, a facsimile machine is provided that is low in price and can easily carry out individual management for preservation of data while maintaining preservation (storage) quality of data even when a semiconductor memory that is not guaranteed in quality is used as the storage medium for the data.

Abstract: An image recording apparatus which records an image of an original document on an image receiving sheet with the use of a photosensitive recording medium, the image receiving sheet having front and rear faces differing in reflection ratio. To detect error in sheet face orientation, a sheet face sensor unit is provided upstream of a pressure developing unit which discriminates a face of the image receiving sheet. The sensor unit includes a light emitting element for emitting light toward the face of the image receiving sheet and a light receiving element for receiving light emitted from the light emitting element and reflected on the face of the image receiving sheet.