Abstract: The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.

Abstract: There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin. There can be provided a positive resist composition having high sensitivity and high resolution on exposure to a high energy beam, wherein line edge roughness is reduced since swelling at the time of development is suppressed, and the residue after development is little.

Abstract: Polymers comprising recurring units of cycloolefin having fluorinated alkyl introduced therein are novel and have transparency and alkali solubility. Using the polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.

Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.

Abstract: A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation below 300 nm, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.

Abstract: A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0<k<1, 0<m<1 and 0<k+m?1, and another polymer comprising recurring units having carboxyl groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.

Abstract: There is disclosed a fluorine-containing polymerizable cyclic olefin compound that has one or more partial structures represented by the following general formula (1) or (2). There can be provided a novel fluorine-containing polymerizable cyclic olefin compound which is excellent in transparency to irradiation, for example, at a wavelength of 200 nm or less, especially at a wavelength of 160 nm or less and dry etching resistance, has low hydrophobicity, and is excellent in development characteristics, and thus is useful as a raw material for a base resin of photoresist composition.

Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.

Abstract: A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(?O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.

Abstract: Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is a hydrophilic group. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.

Abstract: A resist composition comprising a copolymer of an acrylic ester monomer containing fluorine at &agr;-position with a norbornene derivative containing oxygen or sulfur within the norbornene ring as a base resin is sensitive to high-nergy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: The present invention relates to a naturally derived cosmetic material obtained from bean broth, or by being fermented it or treating it with enzymes, and to a manufacturing method thereof. The method for manufacturing the cosmetic material of the present invention is characterized in that beans are added to a water-based solvent and heated, and the bean broth thus obtained is subjected to fractional purification, to inoculation with Bacillus natto and fermentation culturing, or to the action of soybean Aspergillus bacteria-derived proteases. Because the cosmetic material obtained by this method has excellent SOD activity, cytotonic activity, collagen-formation accelerating ability, antibacterial activity, and tyrosinase inhibiting action, this cosmetic material inhibits the peroxidation of skin lipids and prevents skin aging, and can be appropriately used as a beauty product having excellent functionality in the skin.

Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

Abstract: A resist composition comprising a fluorinated polymer having carboxylate pendants and with a weight average molecular weight of 1,000-500,000 as a base resin is sensitive to high-energy radiation below 200 nm, has high transparency, resolution and plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000-500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.

Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.

Abstract: A resist composition comprising as the base resin a blend of a fluorinated polymer which is sensitive to high-energy radiation and highly transparent at a wavelength of up to 200 nm and a sulfonate-containing polymer exhibiting a high contrast upon alkali dissolution is improved in transparency and alkali dissolution contrast as well as plasma etching resistance.

Abstract: Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is an acid labile group. Using such polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.

Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.