Abstract: A copolymer of an alkali-soluble (?-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with few development defects.

Abstract: To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.

Abstract: A polymerizable fluorinated compound having formula (2a) or (2b) wherein R1 and R2 are H or C1-C20 alkyl or fluoroalkyl, R3 is H, F or C1-C4 alkyl or fluoroalkyl, and R is H or a protective group is polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light of wavelength?300 nm, alkali development amenability, and dry etch resistance.

Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.

Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.

Abstract: Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.

Abstract: The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography.

Abstract: A resist protective coating material is provided comprising an ?-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.

Abstract: To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.

Abstract: A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.

Abstract: A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.

Abstract: A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2?a?0.8, and 0.1?b 0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.

Abstract: A polymer comprising recurring units of formula (1) wherein R1 is F or fluoroalkyl, R2 is alkylene or fluoroalkylene, and R3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.

Abstract: To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing ?-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography.

Abstract: A semiconductor memory device includes: a memory cell array region formed in a semiconductor region of a first conductivity type and having a plurality of memory cells arranged in rows and columns; a plurality of word lines each of which collectively connects ones of the plurality of memory cells aligned in the same row; and a protective diode region formed in the semiconductor region to be separated from the memory cell array region. In the protective diode region, a protective diode element is constructed by making a junction between a first diffusion layer of a second conductivity type formed in the upper portion of the semiconductor region and the semiconductor region. Each of the word lines extends to the protective diode region and is brought into direct connection to the first diffusion layer of the second conductivity type, thereby making electrical connection to the protective diode element.

Abstract: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the resist overcoat material.

Abstract: To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.

Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R1 is an acid labile group, R2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4?1, b is 1 or 2, and c is 0 or 1.

Abstract: To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.

Abstract: A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.