Patents by Inventor Yuji Iwaki
Yuji Iwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20110108828Abstract: It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element fowled by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.Type: ApplicationFiled: January 20, 2011Publication date: May 12, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takahiro KAWAKAMI, Tomoya AOYAMA, Junichiro SAKATA, Hisao IKEDA, Satoshi SEO, Yuji IWAKI
-
Patent number: 7935958Abstract: The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.Type: GrantFiled: October 18, 2005Date of Patent: May 3, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroko Abe, Yuji Iwaki, Mikio Yukawa, Shunpei Yamazaki, Yasuyuki Arai, Yasuko Watanabe, Yoshitaka Moriya
-
Patent number: 7883788Abstract: It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element fowled by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.Type: GrantFiled: August 20, 2010Date of Patent: February 8, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro Kawakami, Tomoya Aoyama, Junichiro Sakata, Hisao Ikeda, Satoshi Seo, Yuji Iwaki
-
Publication number: 20100317161Abstract: To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.Type: ApplicationFiled: August 24, 2010Publication date: December 16, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Akiharu MIYANAGA, Ko INADA, Yuji IWAKI
-
Publication number: 20100308320Abstract: It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element fowled by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.Type: ApplicationFiled: August 20, 2010Publication date: December 9, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takahiro KAWAKAMI, Tomoya AOYAMA, Junichiro SAKATA, Hisao IKEDA, Satoshi SEO, Yuji IWAKI
-
Publication number: 20100295034Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.Type: ApplicationFiled: July 30, 2010Publication date: November 25, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hiroko ABE, Yuji IWAKI, Mikio YUKAWA, Shunpei YAMAZAKI, Yasuyuki ARAI, Yasuko WATANABE, Yoshitaka MORIYA
-
Patent number: 7829434Abstract: To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.Type: GrantFiled: September 15, 2008Date of Patent: November 9, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd,Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Ko Inada, Yuji Iwaki
-
Patent number: 7795617Abstract: It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.Type: GrantFiled: October 24, 2005Date of Patent: September 14, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Jun Koyama, Hiroko Abe, Mikio Yukawa, Yuji Iwaki, Shunpei Yamazaki
-
Patent number: 7790296Abstract: It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element formed by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.Type: GrantFiled: May 18, 2006Date of Patent: September 7, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro Kawakami, Tomoya Aoyama, Junichiro Sakata, Hisao Ikeda, Satoshi Seo, Yuji Iwaki
-
Patent number: 7781758Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.Type: GrantFiled: October 13, 2005Date of Patent: August 24, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroko Abe, Yuji Iwaki, Mikio Yukawa, Shunpei Yamazaki, Yasuyuki Arai, Yasuko Watanabe, Yoshitaka Moriya
-
Publication number: 20100084645Abstract: An object is to provide a light emitting element with low drive voltage which contains an organic compound and an inorganic compound. One feature of a light emitting element of the present invention is to include a layer containing a light emitting material between a pair of electrodes, in which the layer containing a light emitting material has a layer containing a carbazole derivative represented by General Formula (1) and an inorganic compound which exhibits an electron accepting property to the carbazole derivative represented by General Formula (1). With such a structure, the inorganic compound accepts electrons from the carbazole derivative, carriers are generated internally, and a drive voltage of the light emitting element can be reduced.Type: ApplicationFiled: October 8, 2009Publication date: April 8, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuji IWAKI, Satoshi SEO, Daisuke KUMAKI, Harue NAKASHIMA, Kumi KOJIMA
-
Patent number: 7667389Abstract: A light-emitting element is demonstrated which has a mixed layer between a pair of electrodes. The mixed layer comprises a first region and a second region each of which comprises both a metal oxide and a compound that exhibits an electron donating property to the metal oxide. The light-emitting element is characterized in that the first region and the second region are provided alternately and repeatedly in a thickness direction of the mixed layer and have a thickness of 0.1 nm to 10 nm, and that a concentration of the metal oxide in the first region is different from that in the second region.Type: GrantFiled: December 5, 2005Date of Patent: February 23, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hisao Ikeda, Junichiro Sakata, Yuji Iwaki
-
Patent number: 7649197Abstract: An object is to provide a light emitting element with low drive voltage which contains an organic compound and an inorganic compound. One feature of a light emitting element of the present invention is to include a layer containing a light emitting material between a pair of electrodes, in which the layer containing a light emitting material has a layer containing a carbazole derivative represented by General Formula (1) and an inorganic compound which exhibits an electron accepting property to the carbazole derivative represented by General Formula (1). With such a structure, the inorganic compound accepts electrons from the carbazole derivative, carriers are generated internally, and a drive voltage of the light emitting element can be reduced.Type: GrantFiled: March 9, 2006Date of Patent: January 19, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuji Iwaki, Satoshi Seo, Daisuke Kumaki, Harue Nakashima, Kumi Kojima
-
Publication number: 20090309093Abstract: An object is to provide a light emitting element with low drive voltage which contains an organic compound and an inorganic compound. One feature of a light emitting element of the present invention is to include a layer containing a light emitting material between a pair of electrodes, in which the layer containing a light emitting material has a layer containing a carbazole derivative represented by General Formula (1) and an inorganic compound which exhibits an electron accepting property to the carbazole derivative represented by General Formula (1). With such a structure, the inorganic compound accepts electrons from the carbazole derivative, carriers are generated internally, and a drive voltage of the light emitting element can be reduced.Type: ApplicationFiled: March 9, 2006Publication date: December 17, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuji Iwaki, Satoshi Seo, Daisuke Kumaki, Harue Nakashima, Kumi Kojima
-
Patent number: 7626198Abstract: The purpose of the present invention is to provide a nonlinear element with high productivity, which can be driven at low voltage, an element substrate including the nonlinear element, and a liquid crystal display device including the element substrate. A structure of the nonlinear element of the present invention includes a layer formed using a composite material containing an inorganic compound and an organic compound between a first electrode and a second electrode. Further, as the composite material containing the inorganic compound and the organic compound, a composite material, which exhibits nonlinear behavior in both cases of applying forward bias voltage and reverse bias voltage, is used.Type: GrantFiled: March 9, 2006Date of Patent: December 1, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiharu Hirakata, Junichiro Sakata, Hisao Ikeda, Yuji Iwaki, Takahiro Kawakami
-
Publication number: 20090230847Abstract: An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object of the present invention is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object of the present invention is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.Type: ApplicationFiled: July 19, 2006Publication date: September 17, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuji Iwaki, Junichiro Sakata, Hisao Ikeda, Tomoya Aoyama, Takaaki Nagata, Takahiro Kawakami, Satoshi Seo, Ryoji Nomura
-
Publication number: 20090206732Abstract: It is an object to provide a light-emitting element which can reduce power consumption. A light-emitting element is provided, which includes a pair of electrodes and a light-emitting layer interposed between the pair of electrodes. The light-emitting layer includes at least a first layer and a second layer, each of the first layer and the second layer includes an emission center and a host material, the emission center is dispersed in the host material, a thickness of each of the first layer and the second layer is 1 nm or more and 10 nm or less, and the first layer is not in contact with the second layer.Type: ApplicationFiled: July 3, 2006Publication date: August 20, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Seo, Yuji Iwaki
-
Publication number: 20090121874Abstract: The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.Type: ApplicationFiled: January 7, 2009Publication date: May 14, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Ryoji NOMURA, Hiroko ABE, Yuji IWAKI, Shunpei YAMAZAKI
-
Publication number: 20090081849Abstract: To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.Type: ApplicationFiled: September 15, 2008Publication date: March 26, 2009Applicant: Semiconductor Energy Laboratory Co. Ltd.Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Ko Inada, Yuji Iwaki
-
Publication number: 20090058267Abstract: One object of the present invention is to provide a light emitting element that includes an organic compound and an inorganic compound and has low driving voltage. The light emitting element of the invention includes a plurality of layers between a pair of electrodes, wherein the plurality of layers includes a layer that contains a carbazole derivative represented by a general formula (1) and an inorganic compound exhibiting an electron accepting property with respect to the carbazole derivative. By utilizing this structure, electrons are transported between the carbazole derivative and the inorganic compound and carriers are internally generated, and hence, the driving voltage of the light emitting element can be reduced.Type: ApplicationFiled: November 28, 2005Publication date: March 5, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Harue Nakashima, Sachiko Kawakami, Daisuke Kumaki, Satoshi Seo, Hisao Ikeda, Junichiro Sakata, Yuji Iwaki