Patents by Inventor Yuji Judai
Yuji Judai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7598556Abstract: A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.Type: GrantFiled: April 8, 2005Date of Patent: October 6, 2009Assignee: Panasonic CorporationInventors: Takumi Mikawa, Yuji Judai
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Patent number: 7557011Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.Type: GrantFiled: November 17, 2005Date of Patent: July 7, 2009Assignee: Panasonic CorporationInventors: Takumi Mikawa, Yuji Judai, Toshie Kutsunai
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Patent number: 7413949Abstract: A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.Type: GrantFiled: April 29, 2005Date of Patent: August 19, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Shinichiro Hayashi
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Patent number: 7326990Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.Type: GrantFiled: March 3, 2006Date of Patent: February 5, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Toshie Kutsunai
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Publication number: 20070235787Abstract: A capacitor device having a three-dimensional structure includes: a lower electrode formed on a semiconductor substrate to have a three-dimensional shape; a capacitor insulating film formed to cover the lower electrode and made of a ferroelectric material; and an upper electrode formed on the capacitor insulating film to have a step portion. A stress control layer is formed on the upper electrode to cause tensile stress and function as a moisture diffusion barrier.Type: ApplicationFiled: April 20, 2006Publication date: October 11, 2007Inventors: Yoshihisa Nagano, Yuji Judai
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Patent number: 7180122Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.Type: GrantFiled: April 14, 2004Date of Patent: February 20, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Toshie Kutsunai
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Patent number: 7157348Abstract: After a capacitor device including a lower electrode, a capacitor dielectric film made from a ferroelectric film and an upper electrode is formed on a substrate, an insulating film covering the capacitor device is formed. Subsequently, the capacitor device covered with the insulating film is annealed for crystallizing the ferroelectric film.Type: GrantFiled: January 14, 2003Date of Patent: January 2, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Atsushi Noma
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Publication number: 20060220091Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.Type: ApplicationFiled: March 3, 2006Publication date: October 5, 2006Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Toshie Kutsunai
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Publication number: 20060124983Abstract: A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.Type: ApplicationFiled: February 3, 2006Publication date: June 15, 2006Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshie Kutsunai, Takumi Mikawa, Yuji Judai
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Patent number: 7060552Abstract: A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.Type: GrantFiled: May 12, 2004Date of Patent: June 13, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Toshie Kutsunai, Yuji Judai
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Publication number: 20060079066Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.Type: ApplicationFiled: November 17, 2005Publication date: April 13, 2006Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Toshie Kutsunai
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Publication number: 20050285170Abstract: A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.Type: ApplicationFiled: April 8, 2005Publication date: December 29, 2005Inventors: Takumi Mikawa, Yuji Judai
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Patent number: 6963095Abstract: The ferroelectric memory device has a plurality of capacitor elements each formed on a semiconductor substrate and composed of a lower electrode, a capacitor insulating film made of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film to have an upper surface planarized relative to the upper surface of the burying insulating film and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6 ?m or less.Type: GrantFiled: August 4, 2003Date of Patent: November 8, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Toshie Kutsunai, Yuji Judai
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Patent number: 6960800Abstract: A lower electrode is formed on a substrate, a capacitive insulating film is formed out of a ferroelectric film on the lower electrode, and an upper electrode is formed on the capacitive insulating film. A contact layer is formed on the upper electrode. The contact layer is either a single-layer film made of a metal oxide or a metal nitride or a multilayer structure made up of metal oxide and metal nitride films. An insulating film is formed to cover the lower electrode, capacitive insulating film, upper electrode and contact layer. A contact hole is opened through the insulating film and the contact layer to reach the upper electrode. A metal interconnect, which is filled in the contact hole and connected to the upper electrode, is formed on a part of the insulating film.Type: GrantFiled: December 12, 2000Date of Patent: November 1, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai
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Publication number: 20050199928Abstract: A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.Type: ApplicationFiled: April 29, 2005Publication date: September 15, 2005Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Shinichiro Hayashi
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Patent number: 6939725Abstract: A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.Type: GrantFiled: February 3, 2004Date of Patent: September 6, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshie Kutsunai, Shinichiro Hayashi, Yuji Judai, Yoshihisa Nagano
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Patent number: 6891715Abstract: A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.Type: GrantFiled: June 27, 2003Date of Patent: May 10, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Takumi Mikawa, Yuji Judai, Shinichiro Hayashi
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Publication number: 20050087788Abstract: A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.Type: ApplicationFiled: October 19, 2004Publication date: April 28, 2005Inventors: Toshie Kutsunai, Takumi Mikawa, Yuji Judai
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Publication number: 20050082638Abstract: A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.Type: ApplicationFiled: October 19, 2004Publication date: April 21, 2005Inventors: Yoshihisa Nagano, Toshie Kutsunai, Yuji Judai, Yasuhiro Uemoto, Eiji Fujii
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Patent number: 6849887Abstract: A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.Type: GrantFiled: June 24, 1998Date of Patent: February 1, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yoshihisa Nagano, Toshie Kutsunai, Yuji Judai, Yasuhiro Uemoto, Eiji Fujii