Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A cleaning processing apparatus, which is one embodiment of a liquid processing apparatus for performing a liquid processing by supplying a predetermined process liquid to a target object to be processed such as a semiconductor wafer while rotating the target object, comprises a rotor for holding wafers W, a slidable process section for housing the rotor, and a cleaning liquid spurting nozzle for supplying a predetermined cleaning liquid to the wafers W. A housing for housing the slidable process section is of a hermetic structure so as to be substantially shielded from the outside.

Abstract: A processing apparatus includes an inner cylinder 25 (a processing chamber 23) accommodated in a carrying unit for carrying an object to be processed and further seals up the object with the inner cylinder 25 or a first stationary wall 34 to process the object in contact with processing fluid. In this processing apparatus with sealing mechanism, flexible hollow packings 100, 101 are arranged doubly in either the inner cylinder 25 or the first stationary wall 34, at its occluded part with the first stationary wall 34 and the inner cylinder 25. The hollow packings 100, 101 have their hollow parts 102 connected with respective pressurized-air sources 103 through pressure-detecting switches 110 and closing valves 105. By expanding or contracting the hollow packings 100, 101, the operation of the apparatus is switched in between its sealing state and non-sealing state. With this arrangement, it is possible to improve the sealing capability and prolong the life of the mechanism.

Abstract: A cleaning method is provided for cleaning a semiconductor wafer. In this method, after removing adhering substances from the wafer by using a chemical liquid of organic amine type, there is carried out a pure-water cleaning capable of prevention of electrostatic destruction and alkaline corrosion on the wafer. In detail, it is executed to make a processing chamber have an atmosphere of carbon dioxide and subsequently introduce steam into the chamber to dissolve CO2-gas into the steam. Next, spray the pure water to the wafer. Then, the steam in which CO2-gas is dissolved dissolves in the pure water, so that the pure wafer becomes weak acid, accomplishing the reduction of resistivity of the pure water. Additionally, alkaline substances is neutralized by carbonated water to prevent an alkaline corrosion on a wiring layer on the wafer's surface.

Abstract: A cleaning and drying apparatus includes a cleaning bath 22 for collecting cleaning liquid and also discharging the liquid, a drying chamber 23 arranged above the cleaning bath 22 and a wafer boat 24 for conveying semiconductor wafers W between the cleaning bath 22 and the drying chamber 23. Dry gas nozzles 37 for ejecting dry gas are provided in the drying chamber 23. A shutter 36 is arranged between the cleaning bath 22 and the drying chamber 23, for insulating the cleaning bath 22 from the drying chamber 23. A central processing unit 60 controls respective operations of the dry gas nozzles 37 and a driving unit 52 for the shutter 36. With the arrangement, after the wafers W have been cleaned in the cleaning bath 22, the cleaning liquid is discharged through a bottom of the bath 22, while the dry gas is supplied from the dry gas nozzles 37 to contact with surfaces of the wafers W and the cleaning liquid in a first drying process.

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A liquid processing apparatus comprises a substrate rotating device including a holder for holding a substrate and a rotating device for rotating the holder, a posture changing mechanism for changing the posture of the substrate rotating device such that a state of the substrate held by the holder changes between substantially vertical and a substantially horizontal, a process chamber for applying the liquid processing to the substrate held substantially vertical by the holder, and a position adjusting mechanism for relatively adjusting the positions of the process chamber and the holder such that the holder is housed in the process chamber. The substrates are taken out of the container hosing the substrates in a substantially horizontal state and are allowed to be held by the holder.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber.

Abstract: A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

Abstract: A cleaning and drying apparatus includes a cleaning bath 22 for collecting cleaning liquid and also discharging the liquid, a drying chamber 23 arranged above the cleaning bath 22 and a wafer boat 24 for conveying semiconductor wafers W between the cleaning bath 22 and the drying chamber 23. Dry gas nozzles 37 for ejecting dry gas are provided in the drying chamber 23. A shutter 36 is arranged between the cleaning bath 22 and the drying chamber 23, for insulating the cleaning bath 22 from the drying chamber 23. A central processing unit 60 controls respective operations of the dry gas nozzles 37 and a driving unit 52 for the shutter 36. With the arrangement, after the wafers W have been cleaned in the cleaning bath 22, the cleaning liquid is discharged through a bottom of the bath 22, while the dry gas is supplied from the dry gas nozzles 37 to contact with surfaces of the wafers W and the cleaning liquid in a first drying process.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A washing/drying process apparatus comprises a spin chuck for holding a substrate such that a surface thereof to be processed faces upward and for rotating the substrate, a process fluid supply mechanism for selectively supplying one or two or more of a plurality of kinds of process fluids to the surface to be processed of the substrate rotated by the spin chuck, the process fluid supply mechanism having a first nozzle with a discharge port for discharging a process fluid which is in a liquid phase under conditions of room temperature and atmospheric pressure, and a second nozzle with a discharge port for discharging fluid which is in a gas phase under conditions of room temperature and atmospheric pressure, a driving mechanism for simultaneously moving the first and second nozzles to a location above the substrate held by the spin chuck, and a controller for controlling operations of the process liquid supply mechanism and the driving mechanism.

Abstract: There is provided a liquid processing apparatus for carrying out a process, such as cleaning, with a chemical serving as a processing liquid, with respect to a semiconductor wafer W which serves as an object to be processed and which is housed in a processing chamber. A chemical tank 10 for storing therein the chemical has a double vessel structure which has an external tank 2 and an internal tank 1 housed in the external tank 2. Supply pipe-lines 14a, 14b and 14c are provided for supplying the chemical from the external tank 2 and the internal tank 1 to the processing chamber. A return pipe-line 56 is provided for returning the chemical from the processing chamber to the external tank 2. The outer periphery of the external tank 2 is surrounded by a heater 4.

Abstract: Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).