Abstract: A light emitting element of one or more embodiments includes a first electrode, a second electrode oppositely to the first electrode, and an emission layer between the first electrode and the second electrode. The light emitting element of one or more embodiments includes a polycyclic compound represented by a specific chemical structure in the emission layer, thereby showing improved emission efficiency and life characteristics.

Abstract: An X-ray CT apparatus according to an embodiment includes a photon-counting X-ray detector including a plurality of pixels and processing circuitry configured to acquire first data in a resolution priority mode from a first pixel set out of the pixels, acquire second data in an energy decomposition mode from a second pixel set, which is different from the first pixel set, out of the pixels at sampling intervals longer than those of the resolution priority mode, and generate third data based on the first data and the second data.

Abstract: A processing condition setting apparatus includes a controller that selects a parameter set to be applied to the wafer processing apparatus from a plurality of parameter sets. The controller estimates, for each of the parameter sets, the post-processing characteristics of the wafer to be processed, based on the pre-processing characteristics of the wafer to be processed and the processing data, assuming that the wafer to be processed has been processed by applying each of the parameter sets. The controller calculates two or more indicators for each of the post-processing characteristics and obtains constraints on the indicators. The controller selects a parameter set, which is to be applied to the wafer processing apparatus when processing the wafer to be processed, from among the conformed parameter sets in which the indicators satisfy the constraints.

Abstract: A motor control apparatus includes: a converter circuit; an inverter circuit; a current detector; a regenerative resistor; a regenerative resistor controller; and a control device. The converter circuit converts alternating current from an alternating current power supply to direct current, converts regenerative direct current from the inverter circuit to regenerative alternating current, and further supplies the regenerative alternating current to the alternating power supply. The inverter circuit converts the direct current to alternating current for driving a motor, and converts regenerative alternating current from the motor to the regenerative direct current. The regenerative direct current from the inverter circuit passes through the resistor. The regenerative direct current passes thorough the resistor upon the current detector detecting the regenerative current exceeding a predetermined value.

Abstract: As an antitumor drug which is excellent in terms of antitumor effect and safety, there is provided an antibody-drug conjugate in which an antitumor compound represented by the following formula is conjugated to an antibody via a linker having a structure represented by the following formula: -L1-L2-LP-NH—(CH2)n1-La-Lb-Lc- wherein the antibody is connected to the terminal of L1, and the antitumor compound is connected to the terminal of Lc with the nitrogen atom of the amino group at position 1 as a connecting position.

Abstract: A retainer is inserted and fitted into an engagement hole that is open in a first direction of a housing where the first direction, a second direction, and a third direction are defined as mutually-orthogonal three directions. An engagement portion is disposed at each of a pair of inner wall surfaces facing each other in the second direction in an inner peripheral wall of the engagement hole. The retainer includes a pair of first outer surfaces facing each other in the first direction, a pair of second outer surfaces facing each other in the second direction, and a pair of third outer surfaces facing each other in the third direction. A long hole passing through the third outer surface in the third direction is formed so as to be adjacent to each of the second outer surfaces, and extends in the first direction defined as a longitudinal direction. A beam portion supported at both ends by a pair of longitudinal-direction end portions is formed between the long hole and the second outer surface.

Abstract: Provided is a method of double-side polishing a wafer by which variations of the GBIR values of polished wafers between batches can be reduced. In the method of double-side polishing a wafer, a current batch includes measuring the center thickness of the wafer before polishing (S100); setting a target GBIR value within a predetermined range (S110); calculating a polishing time of the current batch based on Formula (1) (S120); and polishing both surfaces of the wafer for the calculated polishing time (S130). Polishing time of current batch=polishing time of previous batch+A1×(center thickness of wafer before polishing in previous batch?center thickness of wafer before polishing in current batch)+A2×(GBIR value of wafer after polishing in previous batch?target GBIR value)+A3??(1), where A1, A2, and A3 are predetermined coefficients.

Abstract: In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.

Abstract: The innermost first segment layer and the second segment layer adjacent thereto in a radial direction are twisted using a twisting jig unit including an inner twisting jig and an outer twisting jig, then the twisting jig unit is replaced with another twisting jig unit including an inner twisting jig and an outer twisting jig, and the third segment layer and the fourth segment layer adjacent thereto are twisted, and then the twisting jig unit is replaced with still another twisting jig unit including an inner twisting jig and an outer twisting jig, and the fifth segment layer and the sixth segment layer adjacent thereto are twisted.

Abstract: First receiving recesses for receiving distal end portions of slot insertion portions of normal coil segments, and second receiving recesses for receiving distal end portions of long slot insertion portions of variant coil segments are formed at circumferential intervals on outer peripheral surface of an inner twisting jig corresponding to the innermost layer. In a state where the distal end portions of the long slot insertion portions before being twisted are inserted into the second receiving recesses, the first receiving recesses are at positions displaced in the circumferential direction with respect to the distal end portions to be housed therein. Primary twisting is performed by rotating the inner twisting jig in this state, and then the distal end portions of the normal coil segments are inserted into the first receiving recesses and the secondary twisting is performed with a rotational amount larger than that of the primary twisting.

Abstract: A retainer is inserted and fitted into an engagement hole that is open in a first direction of a housing where the first direction, a second direction, and a third direction are defined as mutually-orthogonal three directions. An engagement portion is disposed at each of a pair of inner wall surfaces facing each other in the second direction in an inner peripheral wall of the engagement hole. The retainer includes a pair of first outer surfaces facing each other in the first direction, a pair of second outer surfaces facing each other in the second direction, and a pair of third outer surfaces facing each other in the third direction. A long hole passing through the third outer surface in the third direction is formed so as to be adjacent to each of the second outer surfaces, and extends in the first direction defined as a longitudinal direction. A beam portion supported at both ends by a pair of longitudinal-direction end portions is formed between the long hole and the second outer surface.

Abstract: A double-side polishing method for a work includes: a pre-polishing index calculation step of calculating an index Xp for a work having been subjected to double-side polishing in the last batch; a target polishing time calculation step of calculating a target polishing time of the current batch using a predetermined prediction formula; and a double-side polishing step of performing double-side polishing of a work using the target polishing time. A double-side polishing apparatus for a work includes: a measurement unit for measuring thicknesses of a work having been subjected to double-side polishing in the last batch; a first calculation unit calculating an index Xp; a second calculation unit calculating a target polishing time Tt of the current batch using a predetermined prediction formula; and a control unit controlling double-side polishing of the work using the calculated target polishing time Tt.

Abstract: There are provided a small-sized power semiconductor module and a small-sized power conversion device capable of reducing ringing voltage. A power semiconductor module includes: a positive electrode-side switching element and a positive electrode-side freewheeling diode corresponding to a positive electrode-side power semiconductor element; a negative electrode-side switching element and a negative electrode-side freewheeling diode corresponding to a negative electrode-side power semiconductor element; a positive electrode conductor pattern; a negative electrode conductor pattern; an AC electrode pattern; and a snubber substrate including an insulating substrate having a snubber circuit formed thereon. The snubber substrate includes the insulating substrate and the at least one snubber circuit arranged on the insulating substrate. The snubber substrate is arranged on at least one of the positive electrode conductor pattern, the negative electrode conductor pattern and the AC electrode pattern.

Abstract: A cutting unit has a support member having insertion holes, and a movable member having through holes connected thereto. The respective left sides of upper surfaces of the square through holes are first movable blades, and the respective right sides thereof are second movable blades. Firstly, the movable member 14 is moved to the right by a predetermined amount to cut peeled-off portions of segment end portions only, and then the movable member is moved to the left by a predetermined amount to cut peeled-off portions of the segment end portions only. Distal ends of the coil segments can be cut into a uniform length to enable high quality welding, through this process.

Abstract: A coil segment forming apparatus includes a second bending section for bending a first bent body consisting of a pair of slot insertion portions that are substantially parallel to each other and a linking portion for connecting the pair of slot insertion portions formed in the same plane. The bending of the first bent body is carried out in a plane perpendicular to the aforementioned same plane. The second bending section has a plurality of pairs of press jigs arranged to oppose to each other in directions intersecting with the aforementioned same plane for pinching and pressing the linking portion, and a plurality of drive mechanisms for moving respectively the plurality of pairs of press jigs in directions intersecting with the aforementioned same plane based on moving amounts respectively set depending on forming conditions of the coil segment to be formed.

Abstract: A plurality of semiconductor elements connected in parallel with one another include a plurality of first semiconductor elements and a plurality of second semiconductor elements. A drive circuit to provide a gate signal to each of the plurality of semiconductor elements EL includes a main circuit and a plurality of inserted circuits including a first inserted circuit and a second inserted circuit. The first inserted circuit is inserted between the main circuit and the plurality of first semiconductor dements. The second inserted circuit is inserted between the main circuit and the plurality of second semiconductor elements. Each of the first inserted circuit and the second inserted circuit includes a first diode having a forward direction toward the main circuit and a second diode connected in anti-parallel with the first diode.

Abstract: A manufacturing apparatus of an electrical rotating machine includes a coil segment shaping section for shaping a linear wire rod with a predetermined length into a coil segment with a predetermined shape consisting of a pair of slot insertion portions extending substantially in parallel with each other and a linking portion for coupling the pair of slot insertion portions, and a coil assembling section for assembling a coil by circularly arranging the coil segments shaped in the coil segment shaping section. The coil segment shaping section and the coil assembling section are constituted to continuously perform the shaping and the assembling of the coil segment in each coil segment unit, based on control data set depending on a coil to be fabricated.

Abstract: A coil segment forming apparatus, a coil segment forming method and a manufacturing apparatus of an electrical rotating machine, whereby coil segments with various kinds of shape can be formed without exchanging a press die, and it is not necessary that a lot of coil segments of various kinds of shape are preliminarily formed and stocked is provided. The coil segment forming apparatus includes a first bending section for bending in the same plane a linear wire rod into a predetermined shape consisting of a pair of slot insertion portions that are substantially parallel to each other and a linking portion for connecting the pair of slot insertion portions.

Abstract: A nozzle turning apparatus includes a nozzle unit that has a nozzle for sending out a wire from a tip end thereof and a nozzle holder for holding the nozzle, the nozzle unit rotatably supporting the nozzle holder, and a nozzle-holder drive member integrally provided with the nozzle unit and moved in the nozzle unit to rotate the nozzle holder. The nozzle-holder drive member is driven to turn the nozzle from a winding state to a wire processing state after a winding operation is finished. Particularly, according to the present invention, the nozzle turning apparatus includes inner unit-drive means integrally provided with the nozzle unit in the nozzle unit, for moving the nozzle-holder drive member, and outer unit-drive means independently provided from the nozzle unit outside the nozzle unit, for driving the inner unit-drive means so as to move the nozzle-holder drive member.

Abstract: Provided is a method of double-side polishing a wafer by which variations of the GBIR values of polished wafers between batches can be reduced. In the method of double-side polishing a wafer, a current batch includes measuring the center thickness of the wafer before polishing (S100); setting a target GBIR value within a predetermined range (S110); calculating a polishing time of the current batch based on Formula (1) (S120); and polishing both surfaces of the wafer for the calculated polishing time (S130). Polishing time of current batch=polishing time of previous batch+A1×(center thickness of wafer before polishing in previous batch?center thickness of wafer before polishing in current batch)+A2×(GBIR value of wafer after polishing in previous batch?target GBIR value)+A3??(1), where A1, A2, and A3 are predetermined coefficients.