Abstract: A cutting unit has a support member having insertion holes, and a movable member having through holes connected thereto. The respective left sides of upper surfaces of the square through holes are first movable blades, and the respective right sides thereof are second movable blades. Firstly, the movable member 14 is moved to the right by a predetermined amount to cut peeled-off portions of segment end portions only, and then the movable member is moved to the left by a predetermined amount to cut peeled-off portions of the segment end portions only. Distal ends of the coil segments can be cut into a uniform length to enable high quality welding, through this process.

Abstract: There are provided a small-sized power semiconductor module and a small-sized power conversion device capable of reducing ringing voltage. A power semiconductor module includes: a positive electrode-side switching element and a positive electrode-side freewheeling diode corresponding to a positive electrode-side power semiconductor element; a negative electrode-side switching element and a negative electrode-side freewheeling diode corresponding to a negative electrode-side power semiconductor element; a positive electrode conductor pattern; a negative electrode conductor pattern; an AC electrode pattern; and a snubber substrate including an insulating substrate having a snubber circuit formed thereon. The snubber substrate includes the insulating substrate and the at least one snubber circuit arranged on the insulating substrate. The snubber substrate is arranged on at least one of the positive electrode conductor pattern, the negative electrode conductor pattern and the AC electrode pattern.

Abstract: The innermost first segment layer and the second segment layer adjacent thereto in a radial direction are twisted using a twisting jig unit including an inner twisting jig and an outer twisting jig, then the twisting jig unit is replaced with another twisting jig unit including an inner twisting jig and an outer twisting jig, and the third segment layer and the fourth segment layer adjacent thereto are twisted, and then the twisting jig unit is replaced with still another twisting jig unit including an inner twisting jig and an outer twisting jig, and the fifth segment layer and the sixth segment layer adjacent thereto are twisted.

Abstract: The object is to provide a technology for enabling detection of the voltage resistance in an assembled snubber substrate. A semiconductor device includes: a snubber substrate fixed to a base while being spaced from a p electrode and an n electrode; a snubber circuit disposed on the snubber substrate and electrically connected to the p electrode and the n electrode; and a semiconductor element electrically connected to the snubber circuit. The base includes an insulating component insulating the p electrode, the n electrode, and the snubber substrate from one another.

Abstract: The object is to provide a technology for enabling detection of the voltage resistance in an assembled snubber substrate. A semiconductor device includes: a snubber substrate fixed to a base while being spaced from a p electrode and an n electrode; a snubber circuit disposed on the snubber substrate and electrically connected to the p electrode and the n electrode; and a semiconductor element electrically connected to the snubber circuit. The base includes an insulating component insulating the p electrode, the n electrode, and the snubber substrate from one another.

Abstract: Examples of a semiconductor device includes a first switching element including a first gate, a first source connected to a common terminal via a first connection line, and a first drain, a second switching element including a second gate, a second source that is connected to the first source via a second connection line and connected to the common terminal via the first connection line and the second connection line, a first capacitor for connecting the first source and a high voltage side of a power supply, a first circuit element having first end connected between the high voltage side of the power supply and the first capacitor, and a second capacitor for connecting the second source and second end of the first circuit element.

Abstract: Examples of a semiconductor device includes a first switching element including a first gate, a first source connected to a common terminal via a first connection line, and a first drain, a second switching element including a second gate, a second source that is connected to the first source via a second connection line and connected to the common terminal via the first connection line and the second connection line, a first capacitor for connecting the first source and a high voltage side of a power supply, a first circuit element having first end connected between the high voltage side of the power supply and the first capacitor, and a second capacitor for connecting the second source and second end of the first circuit element.

Abstract: A nozzle turning apparatus includes a nozzle unit that has a nozzle for sending out a wire from a tip end thereof and a nozzle holder for holding the nozzle, the nozzle unit rotatably supporting the nozzle holder, and a nozzle-holder drive member integrally provided with the nozzle unit and moved in the nozzle unit to rotate the nozzle holder. The nozzle-holder drive member is driven to turn the nozzle from a winding state to a wire processing state after a winding operation is finished. Particularly, according to the present invention, the nozzle turning apparatus includes inner unit-drive means integrally provided with the nozzle unit in the nozzle unit, for moving the nozzle-holder drive member, and outer unit-drive means independently provided from the nozzle unit outside the nozzle unit, for driving the inner unit-drive means so as to move the nozzle-holder drive member.

Abstract: A manufacturing apparatus of an electrical rotating machine includes a coil segment shaping section for shaping a linear wire rod with a predetermined length into a coil segment with a predetermined shape consisting of a pair of slot insertion port ions extending substantially in parallel with each other and a linking portion for coupling the pair of slot insertion portions, and a coil assembling section for assembling a coil by circularly arranging the coil segments shaped in the coil segment shaping section. The coil segment shaping section and the coil assembling section are constituted to continuously perform the shaping and the assembling of the coil segment in each coil segment unit, based on control data set depending on a coil to be fabricated.

Abstract: A coil segment forming apparatus includes a second bending section for bending a first bent body consisting of a pair of slot insertion portions that are substantially parallel to each other and a linking portion for connecting the pair of slot insertion portions formed in the same plane. The bending of the first bent body is carried out in a plane perpendicular to the aforementioned same plane. The second bending section has a plurality of pairs of press jigs arranged to oppose to each other in directions intersecting with the aforementioned same plane for pinching and pressing the linking portion, and a plurality of drive mechanisms for moving respectively the plurality of pairs of press jigs in directions intersecting with the aforementioned same plane based on moving amounts respectively set depending on forming conditions of the coil segment to be formed.

Abstract: A coil segment forming apparatus, a coil segment forming method and a manufacturing apparatus of an electrical rotating machine, whereby coil segments with various kinds of shape can be formed without exchanging a press die, and it is not necessary that a lot of coil segments of various kinds of shape are preliminarily formed and stocked is provided. The coil segment forming apparatus includes a first bending section for bending in the same plane a linear wire rod into a predetermined shape consisting of a pair of slot insertion portions that are substantially parallel to each other and a linking portion for connecting the pair of slot insertion portions.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: A driving circuit of the present invention drives a switching element connected to a main current circuit. The driving circuit includes a driving potion applying on/off-voltage to a gate of the switching element, a common inductor disposed in an interconnection part commonly connected to the driving circuit and a source side of the switching element in a loop formed of the main current circuit and the switching element, and a capacitor connected between the gate side and the source side on the driving portion side with respect to the common inductor.

Abstract: A driving circuit of the present invention drives a switching element connected to a main current circuit. The driving circuit includes a driving potion applying on/off-voltage to a gate of the switching element, a common inductor disposed in an interconnection part commonly connected to the driving circuit and a source side of the switching element in a loop formed of the main current circuit and the switching element, and a capacitor connected between the gate side and the source side on the driving portion side with respect to the common inductor.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A semiconductor device includes an insulating substrate, a metal pattern formed on the insulating substrate, a power terminal bonded onto the metal pattern, and a plurality of power chips bonded onto the metal pattern. The plurality of power chips are all separated from the power terminal by a distance sufficient to thermally isolate the plurality of power chips from the power terminal.

Abstract: A semiconductor device includes an insulating substrate, a metal pattern formed on the insulating substrate, a power terminal bonded onto the metal pattern, and a plurality of power chips bonded onto the metal pattern. The plurality of power chips are all separated from the power terminal by a distance sufficient to thermally isolate the plurality of power chips from the power terminal.

Abstract: A drive circuit for an IGBT includes an H-bridge circuit using first to fourth switch elements. When a control unit receives a command for changing the IGBT from an on state to an off state, it switches states of the first to fourth switch elements from a first state in which the first and fourth switch elements are in an on state and the second and third switch elements are in an off state to a second state in which the first and fourth switch elements are in the off state and the second and third switch elements are in the on state. This structure of the drive circuit can apply a reverse bias to the IGBT from a single power supply.