Abstract: An electronic device has a sealing part 90, a first terminal 11 projecting outward from a first side surface of the sealing part 90, a second terminal 13 projecting outward from a second side surface different from the first side surface of the sealing part 90, an electronic element 95 provided inside the sealing part 90, and a head part 40 coupled to the first terminal 11 and the second terminal and connected to a front surface of the semiconductor element 95 via a conductive adhesive 75.

Abstract: An electronic device has a sealing part 90, a first main terminal 11 protruding outward from the sealing part 90, a second main terminal 12 protruding outwardly from the sealing part, an electronic element 95 provided in the sealing part and having a front surface electrically connected to the first main terminal 11 and a back surface electrically connected to the second main terminal 12, a head part 40 connected to the front surface of the electronic element 95, a sensing terminal 13 protruding to an outside from the sealing part 90 and used for sensing and a connection part 35 integrally formed with the head part 40 and electrically connected to the sensing terminal 13. A current flowing through the sensing terminal 13 and the connection part 35 among a sensing current path does not overlap a main current path flowing through the second main terminal 12, the electronic element 95 and the first main terminal 11.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90 and a connection body 50 having a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75. The head part 40 has a second projection protruding 42 toward the electronic element 95 and a first projection 41 protruding from the second projection 42 toward the electronic element 95.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90, a first terminal that projects outward from the sealing part 90 and a connector 51 that has a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75, and a proximal end part 45 connected to the first terminal via a conductor layer 75. The head part 40 has a single first projection part 41 that projects toward the electronic element 95. The first projection part 41 sinks into the conductive adhesive 75 and comes into point contact with the front surface of the electronic element 95. The proximal end part 45 has a plurality of protrusion parts 49 or a support surface 46, contacting the conductor layer 70.

Abstract: An electronic device has a sealing part 90, a first terminal 11 projecting outward from a first side surface of the sealing part 90, a second terminal 13 projecting outward from a second side surface different from the first side surface of the sealing part 90, an electronic element 95 provided inside the sealing part 90, and a head part 40 coupled to the first terminal 11 and the second terminal and connected to a front surface of the semiconductor element 95 via a conductive adhesive 75.

Abstract: An electronic device has a substrate 5, a first conductor layer 71 provided on the substrate 5, a second conductor layer 72 provided on the substrate 5; an electronic element provided on the first conductor layer 71, and a sealing part 90 covering the substrate 5, the first conductor layer 71, the second conductor layer 72, and the electronic element 95. The first conductor layer 71 is not provided on a virtual straight line VL including the second conductor layer 72 in an in-plane direction of the substrate 5. The second conductor layer 72 is sealed inside the sealing part 90 and covered only with the sealing part 90.

Abstract: An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

Abstract: An electronic device has a sealing part 90, a first main terminal 11 protruding outward from the sealing part 90, a second main terminal 12 protruding outwardly from the sealing part, an electronic element 95 provided in the sealing part and having a front surface electrically connected to the first main terminal 11 and a back surface electrically connected to the second main terminal 12, a head part 40 connected to the front surface of the electronic element 95, a sensing terminal 13 protruding to an outside from the sealing part 90 and used for sensing and a connection part 35 integrally formed with the head part 40 and electrically connected to the sensing terminal 13. A current flowing through the sensing terminal 13 and the connection part 35 among a sensing current path does not overlap a main current path flowing through the second main terminal 12, the electronic element 95 and the first main terminal 11.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90 and a connection body 50 having a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75. The head part 40 has a second projection protruding 42 toward the electronic element 95 and a first projection 41 protruding from the second projection 42 toward the electronic element 95.

Abstract: A semiconductor module includes: a first substrate having a first insulating substrate and a first conductor layer; a power device part having a first electrode, a second electrode and a gate electrode; a second substrate having a second insulating substrate, a second conductor layer and a third conductor layer wherein a hole is formed in the second insulating substrate, the second conductor layer has a bonding portion and a surrounding wall portion; an inner resin portion; a control IC; and an outer resin portion, wherein the first substrate, the power device part, the second substrate and the control IC are stacked in this order, a connector is disposed in the inside of the hole, and the gate electrode is electrically connected to a control signal output terminal of the control IC through a connector.

Abstract: An electronic device has a sealing part 90, an electronic element 95 provided in the sealing part 90, a first terminal that projects outward from the sealing part 90 and a connector 51 that has a head part 40 connected to a front surface of the electronic element 95 via a conductive adhesive 75, and a proximal end part 45 connected to the first terminal via a conductor layer 75. The head part 40 has a single first projection part 41 that projects toward the electronic element 95. The first projection part 41 sinks into the conductive adhesive 75 and comes into point contact with the front surface of the electronic element 95. The proximal end part 45 has a plurality of protrusion parts 49 or a support surface 46, contacting the conductor layer 70.

Abstract: An electronic device has a substrate 5, a first conductor layer 71 provided on the substrate 5, a second conductor layer 72 provided on the substrate 5; an electronic element provided on the first conductor layer 71, and a sealing part 90 covering the substrate 5, the first conductor layer 71, the second conductor layer 72, and the electronic element 95. The first conductor layer 71 is not provided on a virtual straight line VL including the second conductor layer 72 in an in-plane direction of the substrate 5. The second conductor layer 72 is sealed inside the sealing part 90 and covered only with the sealing part 90.

Abstract: A semiconductor module includes: a first substrate having a first insulating substrate and a first conductor layer; a power device part having a first electrode, a second electrode and a gate electrode; a second substrate having a second insulating substrate and a second conductor layer, wherein the second conductor layer has a bonding portion and a surrounding wall portion formed at a position which surrounds the bonding portion as viewed in a plan view; an inner resin portion; a control IC; and an outer resin portion, wherein the power device part is disposed such that the gate electrode is positioned outside a region defined by the surrounding wall portion as viewed in a plan view, and the gate electrode is electrically connected to an output terminal of the control IC through a connecting member.

Abstract: The present invention provides a heat dissipating structure with high heat dissipation performance while reducing the electric resistance. A heat dissipating structure includes: a heat sink having a base portion, and a plurality of heat dissipating fins provided upright on a first surface of the base portion; a first heat generating component provided on a side of the first surface of the base portion while being in contact with at least one heat dissipating fin of the plurality of heat dissipating fins; a circuit board joined to a second surface, opposite to the first face, of the base portion while being electrically connected to the first heat generating component; a second heat generating component provided on the circuit board, the second heat generating component generating a smaller amount of heat than the first heat generating component; and a connector electrically connecting the first heat generating component and the second heat generating component.

Abstract: A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, semiconductor switching parts 10 and 20, and a bypass capacitor 80, the semiconductor switching part 10 provided on the conductive pattern part 51, the semiconductor switching part 20 provided on the conductive pattern part 52, the semiconductor switching part 10 having a side S1 and a side S2, the semiconductor switching part 20 having a side S3 and a side S4, an imaginary line L1 extending along the side S1 and an imaginary line L2 extending along the side S3 intersecting each other.

Abstract: An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

Abstract: A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, a GaN-HEMI 10 disposed on the conductive pattern part 51, and a GaN-HEMT 20 disposed on the conductive pattern part 52, wherein an imaginary line L1 of the GaN-HEMT 10 and an imaginary line L2 of the GaN-HEMT 20 intersect each other, a GaN gate electrode 23 of the GaN-HEMT 20 is electrically connected to the conductive pattern part 55 via a metal wire 6, and the metal wire 6 is perpendicular to a side 55 of the GaN-HEMT 20 and a conductive pattern side 55S of the conductive pattern part 55.

Abstract: A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, semiconductor switching parts 10 and 20, and a bypass capacitor 80, the semiconductor switching part 10 provided on the conductive pattern part 51, the semiconductor switching part 20 provided on the conductive pattern part 52, the semiconductor switching part 10 having a side S1 and a side S2, the semiconductor switching part 20 having a side S3 and a side S4, an imaginary line L1 extending along the side SI and an imaginary line L2 extending along the side S3 intersecting each other.

Abstract: A semiconductor device 1 of an embodiment is provided, including an insulating substrate 2, conductive pattern parts 51, 52, 53, 54, and 55 formed on the insulating substrate, a GaN-HEMT 10 disposed on the conductive pattern part 51, and a GaN-HEMT 20 disposed on the conductive pattern part 52, wherein an imaginary line L1 of the GaN-HEMT 10 and an imaginary line L2 of the GaN-HEMT 20 intersect each other, a GaN gate electrode 23 of the GaN-HEMT 20 is electrically connected to the conductive pattern part 55 via a metal wire 6, and the metal wire 6 is perpendicular to a side 55 of the GaN-HEMT 20 and a conductive pattern side 55S of the conductive pattern part 55.

Abstract: A heat sink according to one embodiment of the present invention includes: a base portion having a first surface and a second surface which oppose each other; at least one heat dissipating fin extending vertically from the first surface, each of the at least one heat dissipating fin having an insertion groove extending from an end portion thereof toward the base portion, and a first fin portion and a second fin portion which are separated by the insertion move; and a connector included in the base portion, the connector being above the insertion groove in plan view, and the connector being configured to electrically connect a first heat generating component to be inserted into the insertion groove from a side of the first surface and a second heat generating component to be disposed on a side of the second surface.