Abstract: A battery state estimating unit (110) estimates an internal state of a secondary battery according to a battery model equation in every arithmetic cycle, and calculates an SOC based on a result of the estimation. A parameter characteristic map (120) stores a characteristic map based on a result of actual measurement performed in an initial state (in a new state) on a parameter diffusion coefficient (Ds) and a DC resistance (Ra) in the battery model equation. The parameter change rate estimating unit (130) estimates a DC resistance change rate (gr) represented by a ratio of a present DC resistance (Rc) with respect to a new-state parameter value (Ran) by parameter identification based on the battery model equation, using battery data (Tb, Vb and Ib) measured by sensors as well as the new-state parameter value (Ran) of the DC resistance corresponding to the p resent battery state and read from the parameter characteristic map (120).

Abstract: A diffusion estimation unit follows a diffusion equation in an active material that is represented by a polar coordinate to estimate a distribution in concentration of lithium in the active material. An open circuit voltage estimation unit obtains an open circuit voltage in accordance with a local SOC(?) based on a concentration of lithium obtained at an interface of the active material as estimated by the diffusion estimation unit. A current estimation unit uses a battery's voltage measured by a voltage sensor, the estimated open circuit voltage, and a parameter value that is set for the battery by a battery parameter value setting unit, and follows a voltage-current relationship model expression simplified from an electrochemical reaction expression to estimate the battery's current density.

Abstract: A display device includes: horizontal scan lines; vertical scan lines; an electro-optical element disposed at each of positions where the horizontal scan lines and the vertical scan lines intersect and selectively turned on based on a video signal and a vertical scan signal; a defect information storing section that stores defect information indicating whether each of the electro-optical elements has a defect; and a video signal generating section that generates a video signal to be supplied to the electro-optical element in each position based on a video signal supplied from outside and the defect information, wherein the video signal generating section supplies a video signal to the electro-optical elements such that the supply of a level required for turning on an element is stopped for an electro-optical element having a defect and the video signal supplied from the outside is supplied to an electro-optical element having no defect.

Abstract: A battery model unit includes an electrode reaction model unit based on the Butler_Volmer equation, an electrolyte lithium concentration distribution model unit analyzing a lithium ion concentration distribution in an electrolyte solution by a diffusion equation, an active material lithium concentration distribution model unit analyzing an ion concentration distribution in a solid state of an active material by a diffusion equation, a current/potential distribution model unit for obtaining a potential distribution according to the charge conservation law, a thermal diffusion model unit and a boundary condition setting unit.

Abstract: A state estimation value indicating a battery state is successively calculated from time to time according to a battery model capable of dynamically estimating the internal state of the secondary battery by using an inspection value of a sensor group indicating the secondary battery behavior. By using the sate estimation value at each moment estimated by the battery model expression at each predetermined cycle, an I/O-enabled time is predicted when a predetermined power is continuously inputted (charged) or outputted (discharged) from the current moment. A load operation instruction of the secondary battery is set so as to avoid overcharge and over-discharge of the secondary battery according to the operation request to the load and by considering the predicted characteristics between input/output power and input/output-allowed time.

Abstract: By using a battery model capable of estimating the internal reaction of a secondary battery based on a parameter value, a battery model portion provides the battery model with the parameter value obtained from a parameter generating portion and estimates the internal state of the secondary battery. The parameter generating portion generates the parameter value including a material property value of the secondary battery, based on information indicating a usage state of the secondary battery. The battery model is updated by updating the parameter value. This reduces a difference between the actual internal state of the secondary battery and the internal state of the secondary battery estimated by the battery model.

Abstract: A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on the first substrate makes contact with the second substrate side in parallel to the second substrate, a movable stage for supporting and moving the swinging unit, a sensor unit for sensing the condition where the device on the first substrate has made contact with the second substrate side, the sensor unit being provided between the first substrate support portion and a sensor support portion formed in the swinging unit, and a measuring unit 61 for measuring the position of stop of a motion of the first substrate due to the contact of the first substrate with the second substrate, and for measuring the moving amount of the swinging unit after the approaching motion of the first substrate is stopped.

Abstract: A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on the first substrate makes contact with the second substrate side in parallel to the second substrate, a movable stage for supporting and moving the swinging unit, a sensor unit for sensing the condition where the device on the first substrate has made contact with the second substrate side, the sensor unit being provided between the first substrate support portion and a sensor support portion formed in the swinging unit, and a measuring unit 61 for measuring the position of stop of a motion of the first substrate due to the contact of the first substrate with the second substrate, and for measuring the moving amount of the swinging unit after the approaching motion of the first substrate is stopped.

Abstract: In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.

Abstract: There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)p and (1 1 1)p planes.

Abstract: In a manufacturing method of a nonvolatile semiconductor memory device including a variable resistive element having a variable resistor made of a perovskite-type metal oxide film, the variable resistor is formed at a temperature which is lower than the melting point of a metal wire layer that has been formed before formation of the variable resistor. More preferably, the variable resistor is formed by a praseodymium calcium manganese oxide, which is represented by a general formula, Pr1-xCaxMnO3, carried out at a film forming temperature in a range from 350° C. to 500° C. according to a sputtering method.

Abstract: In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate, so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.

Abstract: There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)p, (1 1 0)p and (1 1 1)p planes.

Abstract: A display system wherein a photograph 110 on which an image is printed is prepared. The image data of the photograph 110 is read out by a scanner 111 to make an input. A personal computer 112 subjects the input image data to a video processing. A printer 113 prints yellow, magenta and cyan by using an ink ribbon and then prints a white image and thereafter a transparent sheet is ejected therefrom. A backlight apparatus 114 irradiates irradiation light on a print surface, where the white is printed, of the transparent sheet to thereby display the image printed on the transparent sheet.

Abstract: A ghosts removal apparatus for removing a waveform distortion and ghost in television receivers and other various types of image apparatus, can exclude the influence of random noise when ghost is removed, and can favorably remove minute ghost components. A multiplication ratio setting circuit has a second judgment circuit in which a number of ghost removal is counted, and a read only memory (ROM) table which outputs a gradually smaller value of a ghost detection coefficient along with the counted number larger. At the start of ghost removal processing, a large value of the ghost detection coefficient is outputted to exclude the influence of the random noise, and along with the progress of ghost removal processing, a smaller value of the ghost detection coefficient is outputted so that minute residual ghost components can be accurately detected. Accordingly, it is possible for the tap gain of the transversal filter to be set to an optimum value and for ghost to be favorably removed.

Abstract: A television ghost removal apparatus comprises a transversal filter that receives input television signals, compensates waveform distortion included in the signals, and removes a ghost component; a waveform extractor that extracts signal waveforms of predetermined periods that include reference signals for ghost detection from the television signals; a coefficient setter that compares reference waveform signals and the extracted signal waveforms to obtain error signals, and sets coefficient data corresponding to the error signals, and in accordance with this coefficients data, changes filter coefficient of the transversal filter; a band limiter means for removing unnecessary high-region components included in the coefficient data, and supplying the coefficient data from which the unnecessary high-region components have been removed to the transversal filter means, the unnecessary high-region components being outside a frequency band of the reference signal; and a counter means for counting the number of times

Abstract: A ghosting cancel apparatus which can reduce the circuit scale through the use of a one-line memory to remove ghosting, comprises an A/D conversion circuit, a timing signal generation circuit, a one-line memory, a field number register, a calculation processing circuit, a transversal filter, and a D/A conversion circuit. The timing signal generation circuit supplies ghost cancel reference (GCR) field numbers to the field number register, write enable signal to the one-line memory, and read enable signals to a microprocessor inside the calculation processing apparatus. When the one-line memory receives write enable signals, and extracts GCR basic signals from the transversal filter to store them. When the microprocessor receives the read enable signals, and stores it in the waveform memory inside the calculation processing apparatus.

Abstract: A transversal filter filters an input video signal with a variable filtering characteristic. A waveform of a ghost cancel reference signal is periodically extracted from the input signal. An average of the successively-extracted waveforms is calculated. The filtering characteristic is determined on the basis of the calculated average of the extracted waveforms. An extracted waveform which is contaminated by an error or a jitter is rejected and is prevented from being used in the calculation of the average of the extracted waveforms.

Abstract: A waveform distortion removing apparatus includes a digital filter having taps and being controlled in response to tap coefficients. An error signal sequence is generated from a video signal. The error signal sequence contains a waveform distortion. A quadrature signal is generated which has a quadrature relation with the error signal sequence. An absolute value of the quadrature signal is derived. The absolute value of the error signal sequence and the absolute value of the quadrature signal are compared with each other. A greater of the absolute values is selected. The tap coefficients are set in dependence upon the selected greater of the absolute values.

Abstract: Disclosed is a ceramic capacitor of a mono-layer structure or a multi-layer structure, which has characteristic X7R (characteristic B) and which is high in reliability in direct current breakdown voltage at 125.degree. C. and small in size. The ceramic capacitor has a dielectric layer and internal electrodes disposed so as to interpose the dielectric layer. The dielectric layer is composed of a sintered body of ceramic particles whose core sections are made mainly of BaTiO.sub.3 and whose shell sections are made from BaTiO.sub.3 in the form of a solid solution composed of an oxide of one or more than one element selected from Mg, Ca, Sr and Zn and an oxide of one or more than one element selected from Sc, Y, Gd, Dy, Ho, Er, Yb, Tb, Tm and Lu.