Abstract: The present technology relates to an information processing apparatus, an information processing method, and a program capable of searching for and tracking a person desired to be searched for and tracked from images captured by a plurality of cameras with high precision. By inputting decision information used for a user to decide a searching target in a moving-object image PA captured by a monitoring camera imaging an imaging area CamA on a screen P211 indicating a searching and tracking result, as indicated by a hand H1, and by erasing a plot E from the searching and tracking result because of a distant position to which a person may not travel at an average human movement speed for about 5 seconds despite moving for a time of 5 seconds (1:00:05 to 1:00:00) from a plot A to the plot E by time-space comparison between detection results of the plots A and E, it is possible to improve precision of the searching and tracking result.

Abstract: Information about link relations between cameras is to be accurately and readily acquired. The surveillance areas of cameras registered on a map having a surveillance region set thereon are projected onto the map. The shortest paths between the cameras registered on the map are searched for. Links between the cameras are determined based on the surveillance areas of the cameras projected on the map and the shortest paths between the cameras detected on the map. Unlike a conventional technique by which link information is manually acquired, this technique does not require a surveillance object to walk around so as to be actually captured by all the cameras, and can be applied even in a case where there is congestion in the surveillance region. Accordingly, the load on the user can be reduced.

Abstract: Disclosed is a magnetic annealing apparatus including a carrier conveyance region and a workpiece conveyance region. The carrier conveyance region includes: a first mounting table where a carrier is disposed; second mounting tables where carriers are disposed to convey workpieces from the carrier conveyance region to the workpiece conveyance region; a storage unit that stores carriers; and a carrier conveyance mechanism that performs carrying-out/carrying-in of the carriers.

Abstract: Disclosed is a magnetic annealing apparatus which performs a magnetic annealing on workpieces held in a workpiece boat by using a horizontal superconducting magnet as a magnetic field generating unit. The magnetic annealing apparatus includes a carrier configured to accommodate the workpieces before the magnetic annealing process; and a workpiece conveyance mechanism configured to convey the workpieces held in the carrier to the workpiece boat. The workpiece conveyance mechanism is capable of holding the workpieces in either a horizontal state or in a horizontal state.

Abstract: A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Abstract: A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Abstract: A substrate processing system of forming a resist pattern having a molecular resist of a low molecular compound on a substrate includes a film forming device configured to form a resist film on the substrate; an exposure device configured to expose the formed resist film; and a developing device configured to develop the exposed resist film. The film forming device includes a processing chamber configured to accommodate therein the substrate; a holding table that is provided in the processing chamber and configured to hold the substrate thereon; a resist film deposition head configured to supply a vapor of the molecular resist to the substrate held on the holding table; and a depressurizing device configured to depressurize an inside of the processing chamber to a vacuum atmosphere.

Abstract: An evaporating method is capable of forming a thin film on a substrate by a vapor deposition process. The evaporating method includes measuring a vapor concentration of a material gas discharged to the substrate by a detector; and controlling a film forming condition based on a measurement result from the detector.

Abstract: A control valve device develops opening/closing accuracy of a valve assembly. The valve head 310a is configured to open and close a transfer path formed in the valve housing 305 by transmitting the power to the valve assembly 310 from the power transmission member according to a pressure ratio between working fluid supplied to the first space Us and the second space Ls, respectively. The valve head has a Vickers hardness larger than a Vickers hardness of a valve seat of the transfer path to be in contact with the valve head, and a hardness difference therebetween is set to be about 200 Hv to about 300 Hv.

Abstract: Provided are amorphous silica particles for application to industrial fields where there are increasing desires for high purity and colorlessness. The amorphous silica particles are produced through the steps of hydrolysis of an alkoxide, vacuum drying, and firing. The amorphous silica particles have been reduced in coloration and in Fe content, which is causative of coloration of the silica, and can meet the desires. The amorphous silica is characterized by having an Fe content of 20 ppm or less.

Abstract: Provided is a sputtering device which can achieve a sputtering while blocking light that enters from a sputtering space onto a substrate as an object to be sputtered on which an organic thin film is formed, thereby preventing the deterioration in properties of the organic thin film. Specifically provided is a sputtering device for achieving a sputtering of a substrate that is placed on the side of a sputtering space, wherein the sputtering space is formed between a pair of targets that are so placed as to face each other. The sputtering device comprises: an electric power source configured to apply a voltage between the pair of targets; a gas supply unit configured to supply an inert gas to the sputtering space; and a light-shielding mechanism configured to be placed between the sputtering space and the substrate.

Abstract: There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

Abstract: [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. [Solution to Problem] A valve element 310 has a structure in which a valve head 310a and a valve body 310b are coupled by a valve stem 310c. In the valve box 305, the valve element 310 and a power transmitting member 320a are slidably housed. A first bellows 320b is fixed to the power transmitting member 320a and the valve box 305 to form a first space Us at a position on a side of the power transmitting member 320a opposite the valve element. A second bellows 320c is fixed to the power transmitting member 320a and the valve box 305 to form a second space Ls at a position on a side of the power transmitting member 320a closer to the valve element.

Abstract: There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

Abstract: A highly clean and high temperature valve apparatus includes a valve driving unit and a valve casing connected to a bonnet supporting a valve stem slidably. A stem portion has one end positioned in a circumferential wall closed at its two ends by upper and lower covers, and supports one end of the valve stem with its other end extending through the lower cover. The stem portion has its ends supported respectively by first and second bellows for closing an axial through hole of the lower cover tightly. A first pipe communicates with a first space isolated by the first bellows, and a second pipe communicates with a second space isolated by the first bellows. The fluid quantities in the first and second spaces are increased or decreased relative to each other, thereby to drive the stem portion supported in a floating state by the first and second bellows.

Abstract: There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas.

Abstract: A deposition apparatus includes a deposition source unit, a transport mechanism for transporting a vaporized film forming material and a blowing device for blowing off the transported film forming material. The deposition source unit includes a vapor deposition source assembly, a housing and a water cooling jacket. The vapor deposition source assembly includes a gas supply mechanism, a gas inlet and a first material evaporating chamber formed as one body. A heater of the housing heats a film forming material in the first material evaporating chamber and the carrier gas flowing in a plurality of gas passages. The vaporized film forming material is transported by an argon gas. The water cooling jacket is installed apart from an outer peripheral surface of the housing at a certain distance and cools the deposition source unit.

Abstract: Disclosed is an evaporating apparatus for performing a film forming process on a target object to be processed by vapor deposition, wherein a processing chamber and a vapor generating chamber are disposed adjacent to each other, gas exhaust mechanisms for depressurizing an inside of the processing chamber and an inside of the vapor generating chamber are installed, a vapor discharge opening for discharging a vapor of the film forming material is disposed in the processing chamber, vapor generating units for vaporizing the film forming material and control valves for controlling a supply of the vapor of the film forming material are disposed in the vapor generating chamber, and flow paths, which are not exposed to an outside of the processing chamber and the vapor generating chamber, for supplying the vapor of the film forming material generated in the vapor generating units to the vapor discharge opening are installed.

Abstract: In order to increase temperature controllability of a material container, an evaporation unit for forming a film includes a material supply mechanism having a material container, an outer case having a hollow interior in which the material supply mechanism is detachably secured, an internal heater provided in the material supply mechanism and heating the material supply mechanism, and a transfer path which is formed by securing the material supply mechanism to the outer case and which transfers the film forming material vaporized by heating the inner heater.