Abstract: There is provided a technique that includes: at least one process chamber configured to be capable of processing a substrate; one or more supports configured to be capable of supporting the substrate; a transporter configured to be capable of transporting the one or more supports; a transfer chamber configured to be capable of transferring the substrate; a transport chamber that is adjacent to the transfer chamber and the at least one process chamber and is configured to be capable of moving the transporter; and a delivery chamber that is disposed in the transport chamber and is configured to be capable of delivering the one or more supports.

Abstract: There is provided a technique that includes: at least one process chamber configured to be capable of processing a substrate; one or more supports configured to be capable of supporting the substrate; a transporter configured to be capable of transporting the one or more supports; a transfer chamber configured to be capable of transferring the substrate; a transport chamber that is adjacent to the transfer chamber and the at least one process chamber and is configured to be capable of moving the transporter; and a delivery chamber that is disposed in the transport chamber and is configured to be capable of delivering the one or more supports.

Abstract: A technique including: a process chamber in which a substrate is processed; a heater configured to heat the substrate in the process chamber; and a housing including the heater and the process chamber, in which the heater includes: an outer tube; an inner tube disposed inside the outer tube; and a heater wire including a power line disposed in an inner space of the inner tube and a power line that is different from the power line disposed in the inner space of the inner tube and is disposed between the outer tube and the inner tube.

Abstract: There is provided a technique that includes: at least one process chamber configured to be capable of processing a substrate; one or more supports configured to be capable of supporting the substrate; a transporter configured to be capable of transporting the one or more supports; a transfer chamber configured to be capable of transferring the substrate; a transport chamber that is adjacent to the transfer chamber and the at least one process chamber and is configured to be capable of moving the transporter; and a delivery chamber that is disposed in the transport chamber and is configured to be capable of delivering the one or more supports.

Abstract: There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.

Abstract: A substrate processing technique including: a module including a gas supplier having an upstream side gas guide and a supply structure, a reaction tube communicating with the gas supplier, and a gas exhauster; a supply pipe connected to the gas supplier, and an exhaust pipe connected to the gas exhauster; a carry chamber adjacent to a plurality of the modules; and a piping arrangement region in which the supply pipe or the exhaust pipe can be arranged, in which the reaction tube is disposed at a position overlapping the carry chamber, when the supply pipe is disposed in the piping arrangement region, the gas exhauster is disposed at a position oblique to the shaft and not overlapping the carry chamber, and when the exhaust pipe is disposed in the piping arrangement area, the gas supplier is disposed at a position oblique to the shaft and not overlapping the carry chamber.

Abstract: There is provided a technique capable of uniformly supplying a gas with respect to a surface of a substrate when the substrate is processed. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube; and a gas supply nozzle for supplying a gas to a substrate supported by a substrate support in the reaction tube along a direction parallel to a substrate surface. The gas supply nozzle is provided with a gas ejection port including an edge vicinity portion and a central portion defined along the direction parallel to the surface of the substrate. An opening dimension of the edge vicinity portion of the gas ejection port measured along a direction orthogonal to the direction parallel to the surface of the substrate is greater than an opening dimension of the central portion of the gas ejection port measured along the same direction.

Abstract: There is provided a technique capable of improving a step coverage performance of a film formed on a substrate. According to one aspect thereof, there is provided a substrate processing method including: (a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate; (a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and (b) supplying a reactive gas toward the substrate.

Abstract: There is provided technic that includes: a processing chamber having a film formation processing area and a modification processing area adjacent to the film formation processing area; a film former configured to perform film formation processing on a substrate in the film formation processing area; a modifier configured to perform modification processing different from the film formation processing on the substrate in the modification processing area; a substrate mounter configured to support the substrate; and a controller configured to control the substrate mounter such that a speed of moving the substrate is different between the film formation processing area and the modification processing area when the substrate moves in each of the film formation processing area and the modification processing area.

Abstract: A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

Abstract: According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.

Abstract: There is provided a technique that includes: a process container in which a substrate is processed; a support configured to support the substrate in the process container; a gas flow controller configured to form a gas flow capable of making contact with the substrate in the process container; a first actuator configured to allow the support to reciprocate in the process container; and a second actuator configured to allow the gas flow controller to reciprocate in the process container in a direction opposite to a moving direction of the support.

Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Abstract: An amount of particles generated when a source material is used is suppressed. A substrate is loaded into a process chamber, and the source material is sequentially flowed into an evaporator, and a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions to be evaporated and supplied into the process chamber to process the substrate, and then, the substrate is unloaded from the process chamber.

Abstract: According to one aspect of the present disclosure, there is provided a technique including: (a) stacking and accommodating substrates in a process chamber; (b) supplying a source gas to the plurality of substrates through a first nozzle provided in the process chamber along a stacking direction of the plurality of substrates and a second nozzle provided in the process chamber along the stacking direction of the plurality of substrates, wherein an amount of the source gas supplied through an upper portion of the first nozzle is greater than that of the source gas supplied through a lower portion of the first nozzle, and an amount of the source gas supplied through the lower portion of the second nozzle is greater than that of the source gas supplied through the upper portion of the second nozzle; and (c) supplying a reactive gas to the substrates.

Abstract: There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).

Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Abstract: A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.

Abstract: Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.

Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.