Patents by Inventor Yuji Takebayashi

Yuji Takebayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220208530
    Abstract: There is provided technic that includes: a processing chamber having a film formation processing area and a modification processing area adjacent to the film formation processing area; a film former configured to perform film formation processing on a substrate in the film formation processing area; a modifier configured to perform modification processing different from the film formation processing on the substrate in the modification processing area; a substrate mounter configured to support the substrate; and a controller configured to control the substrate mounter such that a speed of moving the substrate is different between the film formation processing area and the modification processing area when the substrate moves in each of the film formation processing area and the modification processing area.
    Type: Application
    Filed: March 18, 2022
    Publication date: June 30, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventor: Yuji TAKEBAYASHI
  • Publication number: 20220199443
    Abstract: A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.
    Type: Application
    Filed: March 10, 2022
    Publication date: June 23, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yuji TAKEBAYASHI, Makoto HIRANO, Koji SHIBATA, Yusaku OKAJIMA
  • Publication number: 20220170160
    Abstract: According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.
    Type: Application
    Filed: February 18, 2022
    Publication date: June 2, 2022
    Applicant: Kokusai Electric Corporation
    Inventors: Makoto HIRANO, Yuji TAKEBAYASHI
  • Publication number: 20220145465
    Abstract: There is provided a technique that includes: a process container in which a substrate is processed; a support configured to support the substrate in the process container; a gas flow controller configured to form a gas flow capable of making contact with the substrate in the process container; a first actuator configured to allow the support to reciprocate in the process container; and a second actuator configured to allow the gas flow controller to reciprocate in the process container in a direction opposite to a moving direction of the support.
    Type: Application
    Filed: January 28, 2022
    Publication date: May 12, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yuji TAKEBAYASHI, Kenji ONO
  • Patent number: 11299804
    Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: April 12, 2022
    Assignee: Kokusai Electric Corporation
    Inventors: Yuji Takebayashi, Kosuke Takagi, Atsushi Hirano, Ryuichi Nakagawa, Noriyuki Isobe
  • Publication number: 20220042170
    Abstract: An amount of particles generated when a source material is used is suppressed. A substrate is loaded into a process chamber, and the source material is sequentially flowed into an evaporator, and a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions to be evaporated and supplied into the process chamber to process the substrate, and then, the substrate is unloaded from the process chamber.
    Type: Application
    Filed: October 25, 2021
    Publication date: February 10, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kosuke TAKAGI, Yuji TAKEBAYASHI
  • Publication number: 20220002873
    Abstract: According to one aspect of the present disclosure, there is provided a technique including: (a) stacking and accommodating substrates in a process chamber; (b) supplying a source gas to the plurality of substrates through a first nozzle provided in the process chamber along a stacking direction of the plurality of substrates and a second nozzle provided in the process chamber along the stacking direction of the plurality of substrates, wherein an amount of the source gas supplied through an upper portion of the first nozzle is greater than that of the source gas supplied through a lower portion of the first nozzle, and an amount of the source gas supplied through the lower portion of the second nozzle is greater than that of the source gas supplied through the upper portion of the second nozzle; and (c) supplying a reactive gas to the substrates.
    Type: Application
    Filed: September 16, 2021
    Publication date: January 6, 2022
    Applicant: Kokusai Electric Corporation
    Inventors: Kazuki NONOMURA, Yuji TAKEBAYASHI
  • Publication number: 20210193486
    Abstract: There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).
    Type: Application
    Filed: March 3, 2021
    Publication date: June 24, 2021
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Gen LI, Hirohisa YAMAZAKI, Kenichi SUZAKI, Yuji TAKEBAYASHI
  • Patent number: 11031270
    Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: June 8, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi Hirano, Yuji Takebayashi, Yukinao Kaga, Masanori Sakai, Masakazu Shimada
  • Patent number: 11020760
    Abstract: A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: June 1, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toshiki Fujino, Yuma Fujii, Kazuki Nonomura, Yoshinori Baba, Yuji Takebayashi, Kenichi Suzaki
  • Publication number: 20200392625
    Abstract: Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 17, 2020
    Inventors: Yuji TAKEBAYASHI, Unryu OGAWA, Toshiki FUJINO, Yukihito HADA, Naoko TSUNODA
  • Patent number: 10640869
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Masayoshi Minami, Yoshinobu Nakamura, Kosuke Takagi, Yukinao Kaga, Yuji Takebayashi
  • Publication number: 20200095676
    Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.
    Type: Application
    Filed: August 28, 2019
    Publication date: March 26, 2020
    Inventors: Yuji TAKEBAYASHI, Kosuke TAKAGI, Atsushi HIRANO, Ryuichi NAKAGAWA, Noriyuki ISOBE
  • Publication number: 20190093224
    Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Ryosuke YOSHIDA, Yukinao KAGA, Yuji TAKEBAYASHI, Masanori SAKAI, Atsushi HIRANO
  • Publication number: 20190093222
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuyuki OKUDA, Masayoshi MINAMI, Yoshinobu NAKAMURA, Kosuke TAKAGI, Yukinao KAGA, Yuji TAKEBAYASHI
  • Publication number: 20180374734
    Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.
    Type: Application
    Filed: August 10, 2018
    Publication date: December 27, 2018
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi HIRANO, Yuji TAKEBAYASHI, Yukinao KAGA, Masanori SAKAI, Masakazu SHIMADA
  • Patent number: 9768012
    Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: September 19, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hirohisa Yamazaki, Yuji Takebayashi, Masanori Sakai, Tsutomu Kato
  • Publication number: 20170232457
    Abstract: A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
    Type: Application
    Filed: February 14, 2017
    Publication date: August 17, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Toshiki FUJINO, Yuma FUJII, Kazuki NONOMURA, Yoshinori BABA, Yuji TAKEBAYASHI, Kenichi SUZAKI
  • Patent number: 9708708
    Abstract: A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: July 18, 2017
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Noriyuki Isobe, Yuji Takebayashi, Kenichi Suzaki, Takeshi Kasai, Atsushi Hirano, Koichi Oikawa
  • Patent number: D828091
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: September 11, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Toshiki Fujino, Yuma Fujii, Kazuki Nonomura, Yoshinori Baba, Yuji Takebayashi, Kenichi Suzaki