Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Abstract: To grasp an accumulation state of residual matters inside of a vaporizer without decomposing the vaporizer, and grasp the timing of performing maintenance to the inside of the vaporizer in advance.

Abstract: Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member.

Abstract: In order to solve the problem of contamination caused by static electricity on the surface of a substrate after plasma treatment, the invention provides a substrate treatment device comprising a standby chamber in which is arranged a transfer device for loading a substrate out of/into a cassette rack accommodating a substrate, said substrate treatment device capable of retaining said substrate transferred by the transfer device in a boat and loading, by way of a boat elevator, the boat into/out of a treatment furnace capable of applying plasma treatment to said substrate, wherein a static eliminator for eliminating static electricity of said substrate is arranged in said standby chamber.

Abstract: A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supp

Abstract: The present invention relates to a therapeutic agent for inflammatory bowel disease comprising 5-chloro-6-(2-iminopyrrolidin-1-yl)methyl-2,4(1H,3H)-pyrimidinedione or a pharmaceutically acceptable salt thereof as an active ingredient. According to the present invention, an effective and safe therapeutic agent for inflammatory bowel disease including ulcerative colitis and Crohn's disease can be provided. The balance between the therapeutic effect on a chronic inflammation such as inflammatory bowel disease and the adverse side effect of the compound is superior to those of an aminosalicylic acid preparation and a corticosteroid preparation, which cannot be expected at all from a mere anti-diarrheal effect.

Abstract: A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed.

Abstract: Disclosed is a substrate processing apparatus including: a reaction tube to accommodate at least one substrate; at least a pair of electrodes disposed outside the reaction tube; and a dielectric member, wherein a plasma generation region is formed at least in a space between an inner wall of the reaction tube and an outer circumferential edge of the substrate, the member includes a main face extending in a radial direction of the substrate and in a substantially entire circumferential direction of the substrate in a horizontal plane parallel to a main face of the substrate, and is disposed in an outer circumferential region of the substrate, and gas activated in the plasma generation region is supplied through a surface region of the main face of the member to the substrate.

Abstract: To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

Abstract: Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.

Abstract: Provided is a manufacturing method of a semiconductor device composed of a step of carrying-in a wafer into a processing chamber; a step of forming an HfO2 film on the wafer by alternately supplying TEMAH and O3, under heating, into the processing chamber; and a step of carrying-out the wafer from the inside of the processing chamber, wherein in the step of forming the HfO2 film, heating temperature of TEMAH and heating temperature of O3 are set to be different.

Abstract: A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.

Abstract: A processing chamber of a plasma CVD device comprises a lower electrode for placing a semiconductor substrate thereon and an upper electrode provided at a position facing the lower electrode and provided with a concave portion on a surface thereof facing a surface of the lower electrode on which the substrate is placed. In deposition process using such a processing chamber, a contaminant removal sequence is provided between a deposition processing step and an exhausting step. During the deposition process, reactive gases SiH4 and NH3 for forming a Si3N4 film are supplied together with an inert gas N2 into the processing chamber. High-frequency electric power is applied between the electrodes to discharge the reactive gases so as to form the Si3N4 film on the semiconductor substrate.

Abstract: A rotary shaft is supported by a frame so as to be rotatable and movable vertically relative to the frame. A carrying arm is pivoted to the rotary shaft and a substrate receiver is attached to an end of the carrying arm and receives a substrate. A guide base is mounted on the rotary shaft on the lower side of the substrate receiver in such a manner that the guide base is approximately parallel to the substrate receiver, and a substrate alignment mechanism is attached to the rotary shaft via the guide base. The substrate alignment mechanism includes a pair of location correcting members which are coupled to air cylinders. The location correcting members are displaced by air cylinders to correct the location of substrate.

Abstract: The present invention provides monoclonal antibodies against peptides having an amino acid sequence described in Sequence No. 1 or No. 2, the peptides being found in human thymidine phosphorylase and human platelet-derived endothelial cell growth factor. The Invention also provides an immunoassay for human thymidine phosphorylase and/or human platelet-derived endothelial cell growth factor using the monoclonal antibodies. The monoclonal antibodies of the invention recognize human thymidine phosphorylase and human platelet-derived endothelial cell growth factor, and thus are useful in the diagnosis and treatment of various tumors and their metastasis and diseases accompanying abnormal angiogenesis.