Abstract: The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature.

Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.

Abstract: The present invention provides a fluoride single-crystal material for use in a thermoluminescence dosimeter, which material exhibits a thermoluminescence efficiency higher than that of conventional similar materials, and a thermoluminescence dosimeter employing the material. The fluoride single-crystal material for use in a thermoluminescence dosimeter contains a compound represented by LiXAlF6, wherein X is selected from the group consisting of Ca, Sr, Mg, and Ba, and, serving as a dopant, at least one species selected from among Ce, Na, Eu, Nd, Pr, Tm, Tb, and Er.

Abstract: The invention provides a thermoelectric conversion material which is low toxic and can be used at a high temperature of 500° C. or higher without variation in performance, and a thermoelectric conversion device containing the material. The thermoelectric conversion material is formed of an oxide represented by (Ca3-xMx)Co4O9 (M: Sr or Ba, 1.2>x>0.5).

Abstract: The present invention provides an oxide phosphor for use in an electroluminescent device, which phosphor is capable of providing a high-luminance EL device while the composition thereof is controlled to be as simple as possible, and which phosphor attains multi-color and full-color light emissions without the need for treatment at a high temperature greatly in excess of 1,000° C. The invention also provides an electroluminescent device employing the phosphor. The oxide phosphor for use in an electroluminescent device is formed from an yttrium (Y) oxide as a matrix and at least one transition metal element as an activator, or from a Y—Ge—O oxide or a Y—Ge—Si—O oxide as a matrix and at least one metallic element, as a luminescence center, selected from among transition metal elements and rare earth metal elements.

Abstract: The invention provides a thermoelectric conversion material which is low toxic and can be used at a high temperature of 500° C. or higher without variation in performance, and a thermoelectric conversion device containing the material. The thermoelectric conversion material is formed of an oxide represented by (Ca3-xMx)Co4O9 (M: Sr or Ba, 1.2>x>0.5).