Patents by Inventor Yuji Urano
Yuji Urano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240003005Abstract: There is provided a technique, which includes: dividing an inside of a process chamber, into which a cleaning gas is to be supplied, into three or more zones in a gas flow direction and heating the inside of the process chamber such that, in the process chamber, a temperature difference between a zone positioned on an upstream side in the gas flow direction and a zone adjacent to the zone positioned on the upstream side is greater than a temperature difference between a zone positioned on a downstream side in the gas flow direction and a zone adjacent to the zone positioned on the downstream side; and supplying the cleaning gas into the process chamber after the act of heating.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Applicant: Kokusai Electric CorporationInventors: Yasunobu KOSHI, Yuji URANO, Shingo NOHARA, Kazuhiro HARADA
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Publication number: 20230402281Abstract: Included are processes of (a) supplying a film-forming gas into a processing container in which a substrate is accommodated to form a film on the substrate, (b) supplying a fluorine-containing gas into the processing container in which the substrate is not accommodated to remove a deposit including the film adhered to the inside of the processing container, (c) supplying a precoat gas into the processing container in which the substrate is not accommodated and from which the deposit is removed to form a precoat film in the processing container, and (d) supplying a film-forming gas into the processing container in which a substrate is accommodated and in which the precoat film is formed to form a film on the substrate, in which, in (c), a film thickness distribution of the precoat film is adjusted in accordance with a distribution of a residual fluorine concentration in the processing container.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Applicant: Kokusai Electric CorporationInventors: Yasunobu Koshi, Kazuhiro Harada, Yuji Urano, Shingo Nohara
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Publication number: 20230220546Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: ApplicationFiled: February 24, 2023Publication date: July 13, 2023Applicant: Kokusai Electric CorporationInventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
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Patent number: 11618947Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: GrantFiled: September 17, 2019Date of Patent: April 4, 2023Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kazuhiro Harada, Shingo Nohara, Yuji Urano, Yasunobu Koshi, Masayoshi Minami
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Publication number: 20200095678Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: ApplicationFiled: September 17, 2019Publication date: March 26, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
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Patent number: 9895727Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.Type: GrantFiled: September 22, 2016Date of Patent: February 20, 2018Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Yoshinobu Nakamura, Masayoshi Minami, Masayuki Asai, Kazuyuki Okuda, Yuji Urano
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Patent number: 9881789Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.Type: GrantFiled: March 8, 2017Date of Patent: January 30, 2018Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Shingo Nohara, Ryota Sasajima, Katsuyoshi Harada, Yuji Urano
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Patent number: 9856560Abstract: The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.Type: GrantFiled: February 23, 2009Date of Patent: January 2, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Jie Wang, Yuji Urano
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Publication number: 20170178902Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO
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Patent number: 9620357Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.Type: GrantFiled: July 22, 2016Date of Patent: April 11, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Shingo Nohara, Ryota Sasajima, Katsuyoshi Harada, Yuji Urano
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Publication number: 20170087606Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.Type: ApplicationFiled: September 22, 2016Publication date: March 30, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshinobu NAKAMURA, Masayoshi MINAMI, Masayuki ASAI, Kazuyuki OKUDA, Yuji URANO
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Patent number: 9587308Abstract: A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove on surfaces of members in the process chamber by a thermochemical reaction, changing in internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.Type: GrantFiled: February 13, 2015Date of Patent: March 7, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Ryuji Yamamoto, Yuji Urano
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Publication number: 20170025271Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.Type: ApplicationFiled: July 22, 2016Publication date: January 26, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO
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Publication number: 20150232986Abstract: A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove deposits including a film deposited on surfaces of members in the process chamber by a thermochemical reaction, changing an internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.Type: ApplicationFiled: February 13, 2015Publication date: August 20, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji KAMEDA, Ryuji YAMAMOTO, Yuji URANO
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Patent number: 8741783Abstract: A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.Type: GrantFiled: September 14, 2012Date of Patent: June 3, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Kenji Kameda, Yuji Urano
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Publication number: 20130065402Abstract: A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.Type: ApplicationFiled: September 14, 2012Publication date: March 14, 2013Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Yuji Urano
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Patent number: 8304328Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.Type: GrantFiled: March 15, 2007Date of Patent: November 6, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano
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Publication number: 20090170328Abstract: The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.Type: ApplicationFiled: February 23, 2009Publication date: July 2, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Jie Wang, Yuji Urano
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Patent number: D739831Type: GrantFiled: September 20, 2013Date of Patent: September 29, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Kiyohiko Maeda, Yuji Urano, Naoki Matsumoto, Yasuaki Komae
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Patent number: D740769Type: GrantFiled: September 20, 2013Date of Patent: October 13, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Kiyohiko Maeda, Yuji Urano, Naoki Matsumoto, Yasuaki Komae