Patents by Inventor Yuji Zhao

Yuji Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low droop light emitting diode structure on gallium nitride semipolar substrates
    Patent number: 8686397
    Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: April 1, 2014
    Assignee: The Regents of the University of California
    Inventors: Shuji Nakamura, Steven P. DenBaars, Shinichi Tanaka, Daniel F. Feezell, Yuji Zhao, Chih-Chien Pan
  • HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES
    Publication number: 20120313077
    Abstract: High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).
    Type: Application
    Filed: June 11, 2012
    Publication date: December 13, 2012
    Applicant: The Regents of the University of California
    Inventors: Shuji Nakamura, Steven P. DenBaars, Daniel F. Feezell, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka
  • LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES
    Publication number: 20120313076
    Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
    Type: Application
    Filed: June 11, 2012
    Publication date: December 13, 2012
    Applicant: The Regents of the University of California
    Inventors: Shuji Nakamura, Steven P. DenBaars, Shinichi Tanaka, Daniel F. Feezell, Yuji Zhao, Chih-Chien Pan
  • HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
    Publication number: 20120273796
    Abstract: A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
    Type: Application
    Filed: April 30, 2012
    Publication date: November 1, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Yuji Zhao, Shinichi Tanaka, Chia-Yen Huang, Daniel F. Feezell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • HIGH POWER, HIGH EFFICIENCY AND LOW EFFICIENCY DROOP III-NITRIDE LIGHT-EMITTING DIODES ON SEMIPOLAR SUBSTRATES
    Publication number: 20120126283
    Abstract: A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.
    Type: Application
    Filed: October 27, 2011
    Publication date: May 24, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Yuji Zhao, Junichi Sonoda, Chih-Chien Pan, Shinichi Tanaka, Steven P. DenBaars, Shuji Nakamura