Abstract: A plasma etching method includes the step of performing a plasma etching on a CFx film formed on a substrate to be processed by using a plasma of an etching gas. A gaseous mixture including CF4 and O2 is employed as the etching gas. The etching gas further includes a hydrogen-containing gas and the hydrogen-containing gas is CH3F or CH2F2. Further, a plasma etching apparatus includes a processing chamber; a processing gas supply unit; a plasma generating unit, thereby plasma processing the semiconductor substrate; and a control unit. Furthermore, in a computer-readable storage medium for storing therein a computer executable control program, the control program controls a plasma processing apparatus to perform the plasma etching method.

Abstract: In a method for manufacturing a semiconductor device, a first high frequency power of a first frequency is applied to a processing gas to generate a plasma of the processing gas, a second high frequency power of a second frequency smaller than the first frequency is applied to a substrate to be processed. Further, a to-be-etched layer disposed under a resist film having a pattern of openings is etched by using the resist film as a mask, the to-be-etched layer being disposed on a surface of the substrate. In addition, dimensions of openings formed in the to-be-etched layer are controlled by varying an applied power of the first high frequency.

Abstract: In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.