Abstract: An object of the present invention is to provide an exhaust gas purifying catalyst composition and an exhaust gas purifying catalyst, each of which has improved exhaust gas purification performance, and the present invention provides an exhaust gas purifying catalyst composition containing a Ce-based oxide particle, a Ce—Zr-based composite oxide particle, and a noble metal element, wherein the Ce-based oxide particle contains at least one type of additional element selected from Al, Mg, La, Pr, Y, and Nd, and wherein an amount of the at least one type of additional element in terms of oxide in the Ce-based oxide particle is 0.1% by mass or more and 20% by mass or less based on a mass of the Ce-based oxide particle.

Abstract: An angle adjustment mechanism has a block, a projecting piece, and a connection mechanism. The projecting piece is fixed to a stator. The connection mechanism has elongated holes provided in the block and a shaft member provided in the projecting piece. The shaft member is inserted in the elongated holes. During a tilt angle adjustment process, the shaft member is caused to move in a sliding motion in the elongated holes. During a cooling process, the shaft member is also caused to move in a sliding motion in the elongated holes.

Abstract: A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device.

Abstract: A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and directly laminated on the first metal layer. A full width at half maximum of an X-ray diffraction peak having the maximum intensity among at least one X-ray diffraction peak derived from a nickel-containing crystal in the second metal layer is 0.3° or more and 1.2° or less.

Abstract: A load unit jets a load gas from a cone-shaped slit to a first position located in a pathway. As a result, a first gas stream for loading a sample tube is generated. An eject unit jets an eject gas from a cone-shaped slit to a second position in the pathway. As a result, a second gas stream for ejecting a sample tube is generated.

Abstract: An NMR apparatus includes a depressurizing device for depressurizing an NMR probe, a gas supply device for supplying gas into the NMR probe to thereby pressurize the NMR probe, and a control device. The control device alternately repeats depressurization of the NMR probe, using the depressurizing device, and pressurization of the NMR probe, using the gas supply device. This replaces the gas in the NMR probe.

Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.

Abstract: A resist underlayer film-forming composition contains: (A) a compound having a partial structure represented by Formula (1). In Formula (1), R1 and R2 each denote a hydrogen atom, an alkyl group having 1-10 carbon atoms or an aryl group having 6-40 carbon atoms, X denotes an alkyl group having 1-10 carbon atoms, a hydroxyl group, an alkoxy group having 1-10 carbon atoms, an alkoxycarbonyl group having 1-10 carbon atoms, a halogen atom, a cyano group, a nitro group or a combination of these, Y denotes a direct bond, an ether bond, a thioether bond or an ester bond, n is an integer between 0 and 4, and * denotes a site of bonding to a residue of compound (A)); and a solvent.

Abstract: According to one embodiment of a method of generating synthesized light, a light emitter emits a first light element and a second light element, the synthesized light includes the first light element and the second light element, the first light element passing through a first optical path propagates toward a first direction, the second light element passing through a second optical path propagates toward a second direction, the first optical path has a first optical path length, the second optical path has a second optical path length, the first optical path length is different from the second optical path length, and the first direction is different from the second direction.

Abstract: A fluid machine includes a projection, projecting from one surface toward the other surface, is provided in at least one gap among a gap between an outer peripheral surface of a rotary shaft and an inner peripheral surface of a through hole, a gap between a rear surface of a first impeller and a first facing surface of a partition wall, and a gap between a rear surface of a second impeller and a second facing surface of the partition wall. The projection cooperates with the other surface to form therebetween a clearance smaller than a first tip clearance between the first impeller and a first shroud surface of a housing and a second tip clearance between the second impeller and a second shroud surface of the housing. The projection has a collision surface that collides with the other surface when the first impeller and the second impeller vibrate.

Abstract: A fluid machine includes a thrust bearing support supporting a dynamic thrust bearing that includes a first dynamic thrust bearing and a second dynamic thrust bearing and including a first bearing base and a second bearing base fixed to each other via a spacer member. The fluid machine includes a main passage through which fluid flows from a motor chamber toward an operation chamber, and a space between an inner side of the spacer member and an outer side of the first dynamic thrust bearing and the second dynamic thrust bearing in a radial direction of a rotary shaft. The space communicates with a first through hole of the first bearing base communicating with the motor chamber and a second through hole of the second bearing base communicating with the main passage. The thrust bearing support includes a connecting passage interconnecting the space and the main passage.

Abstract: A protective film formation composition contains a polymer having a unit structure represented by formula (1-1), a compound or a polymer having phenolic hydroxy group other than catechol, (C) a thermal acid generator, and (D) a solvent. (Ar represents a benzene, naphthalene, or an anthracene ring; R1 represents a hydroxy, mercapto,amino, halogeno, or an alkyl group that has 1-10 carbon atoms and that may be substituted or interrupted by a hetero atom and may be substituted by a hydroxy group; n1 represents an integer of 0-3; L1 represents a single bond or an alkylene group having 1-10 carbon atoms; E represents an epoxy group; when n2=1, T1 represents a single bond or an alkylene group having 1-10 carbon atoms and may be interrupted by an ether bond, an ester bond, or an amide bond; and when n2=2, T1 represents a nitrogen atom or an amide bond.

Abstract: A direction shifting mechanism for changing a direction of a sample tube is installed on a path of the sample tube between a sample tube supporting unit for supporting, during an NMR measurement, the sample tube used for the NMR measurement and an insertion port through which the sample tube is inserted in and extracted from the sample tube supporting unit. The direction shifting mechanism has a shape which partially includes a form of an arc, and the shape is designed to cause the sample tube to change its direction in such a manner that the sample tube is turned toward the insertion port along the arc while being maintained in contact with at least two points on an inner wall of the direction shifting mechanism.

Abstract: A fluid machine includes a rotary shaft, an operation body configured to discharge fluid by rotation of the rotary shaft, a housing accommodating the rotary shaft and the operation body, and a foil bearing disposed in the housing rotatably supporting the rotary shaft. The foil bearing includes a cylindrical bearing housing, a top foil between the bearing housing and the rotary shaft, and a bump foil between the bearing housing and the top foil and elastically supporting the top foil. The bearing housing has a protrusion protruding inwardly in a radial direction from the bearing housing. The protrusion includes an abutment surface configured to restrict deformation of the bump foil to an elastic range not to reach a plastic range by abutting against the top foil or the bump foil when the top foil is displaced outwardly in the radial direction of the bearing housing.

Abstract: Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.

Abstract: A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa-; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.

Abstract: A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.