Abstract: Provided is a jib connection structure for restraining a projectable/retractable jib from swinging sideways in a state where the jib is suspended from a boom tip end part, the jib connection structure including: jib connection shafts projecting horizontally toward both sides from a boom tip end part; and jib base end engagement parts respectively provided to bifurcated jib base end parts. Each jib base end engagement part is U-shaped into which the jib connection shaft can be fitted, and is provided with an insertion hole into which a pin for preventing the jib connection shaft from slipping out is inserted. The insertion hole in one jib base end engagement part is arranged more toward the outside than a U-shaped bottom part. When a jib is suspended from the boom tip end part, the left and right pins engage with the respective jib connection shafts, and the jib is suspended at two points.

Abstract: Provided is a jib connection structure capable of connecting a jib base end engagement part and a jib connection shaft even when a boom undergoes natural extension, and capable of restraining a jib from swinging sideways in a state where the jib is projected. This jib connection structure includes: jib connection shafts projecting horizontally toward both sides from a boom tip end part; and jib base end engagement parts respectively provided to bifurcated jib base end parts. Each jib base end engagement part is U-shaped into which the jib connection shaft can be fitted, and is provided with an insertion hole into which a pin for preventing the jib connection shaft from slipping out is inserted. When the jib base end engagement part and jib connection shaft are connected, a gap is formed between the pin and jib connection shaft. When a jib is projected, the gap becomes smaller.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: It is an object of the present invention to provide a semiconductor device that has sufficient insulation properties between a screw and a heat dissipation plate, and is smaller and less costly. A semiconductor device of the present invention includes the following: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach the outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw with which an exposed portion of the electrode, protruding from the housing is joined to a busbar. The heat dissipation plate has a thickness lack portion in a location of the heat dissipation plate, the location at least facing the screw, the location being on a screw side.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.

Abstract: The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Abstract: The overhanging storage mechanism for a jib is provided with: a guide roller (31) and a pin socket (45) that are provided to a jib (15); and a guide (32) and a jib-fixing pin (43) that are provided to a base end boom (14a). The guide (32) comprises a first raceway surface (34s) that pulls the jib (15) toward the bottom surface of the base end boom (14a) as a result of rolling of the guide roller (31), a second raceway surface (35s) on which the jib (15) moves along the base end boom (14a), and a protruding third raceway surface (36s) that protrudes from the second raceway surface (35s). The jib (15) is pulled further toward the bottom surface of the base end boom (14a) by roiling of the guide roller (31) on the third raceway surface (36s).

Abstract: The overhanging storage mechanism for a jib is provided with: a guide roller (31) provided to a jib (15); a guide (32) provided to a base end boom (14a); a jib-fixing pin (43) provided to the base end boom (14a); and a pin socket (45) that is provided to the jib (15) and that comprises insertion holes (48), (49). The jib-fixing pin (43) and the insertion holes (48), (49) are arranged so that the jib-fixing pin (43) is inserted in the insertion hole (48) when the jib (15) moves along the base end boom (14a) together with contraction of a boom (14). The inner dimensions of a front end opening (48) are larger than the outer dimensions of the jib-fixing pin (43). It is thus possible to absorb positional displacement between the jib-fixing pin (43) and the insertion hole (48).

Abstract: A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.

Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.

Abstract: Provided is a jib connection structure for restraining a projectable/retractable jib from swinging sideways in a state where the jib is suspended from a boom tip end part, the jib connection structure including: jib connection shafts projecting horizontally toward both sides from a boom tip end part; and jib base end engagement parts respectively provided to bifurcated jib base end parts. Each jib base end engagement part is U-shaped into which the jib connection shaft can be fitted, and is provided with an insertion hole into which a pin for preventing the jib connection shaft from slipping out is inserted. The insertion hole in one jib base end engagement part is arranged more toward the outside than a U-shaped bottom part. When a jib is suspended from the boom tip end part, the left and right pins engage with the respective jib connection shafts, and the jib is suspended at two points.

Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

Abstract: Provided is a jib connection structure capable of connecting a jib base end engagement part and a jib connection shaft even when a boom undergoes natural extension, and capable of restraining a jib from swinging sideways in a state where the jib is projected. This jib connection structure includes: jib connection shafts projecting horizontally toward both sides from a boom tip end part; and jib base end engagement parts respectively provided to bifurcated jib base end parts. Each jib base end engagement part is U-shaped into which the jib connection shaft can be fitted, and is provided with an insertion hole into which a pin for preventing the jib connection shaft from slipping out is inserted. When the jib base end engagement part and jib connection shaft are connected, a gap is formed between the pin and jib connection shaft. When a jib is projected, the gap becomes smaller.

Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.

Abstract: A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.

Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.

Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.