Patents by Inventor Yuki Hata
Yuki Hata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160005872Abstract: To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.Type: ApplicationFiled: June 30, 2015Publication date: January 7, 2016Inventors: Motomu KURATA, Ryota HODO, Shinya SASAGAWA, Yuki HATA
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Publication number: 20150318402Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Inventors: Shunpei YAMAZAKI, Atsuo ISOBE, Yuki HATA, Suguru HONDO
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Patent number: 9112037Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.Type: GrantFiled: February 4, 2013Date of Patent: August 18, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Atsuo Isobe, Yuki Hata, Suguru Hondo
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Publication number: 20150069383Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.Type: ApplicationFiled: September 2, 2014Publication date: March 12, 2015Inventors: Yasutaka Suzuki, Yuki Hata, Yoshinori Ieda
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Publication number: 20150014685Abstract: An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.Type: ApplicationFiled: September 29, 2014Publication date: January 15, 2015Inventors: Toshihiko SAITO, Yuki HATA, Kiyoshi KATO
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Publication number: 20140368486Abstract: An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Inventors: Yuki HATA, Jun KOYAMA, Shuhei NAGATSUKA, Akihiro KIMURA
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Patent number: 8779433Abstract: It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.Type: GrantFiled: May 25, 2011Date of Patent: July 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Yoshinori Ieda, Kiyoshi Kato, Yuto Yakubo, Yuki Hata
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Patent number: 8569753Abstract: The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.Type: GrantFiled: May 27, 2011Date of Patent: October 29, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Yoshinori Ieda, Keitaro Imai, Kiyoshi Kato, Yuto Yakubo, Yuki Hata
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Patent number: 8398958Abstract: The present invention relates to use of carotenoid preparations for promoting skin whitening. Particularly, the present invention discloses that a combination of phytoene and phytofluene is effective in whitening skin. The present invention further relates to carotenoid compositions comprising a combination of phytofluene and phytofluene effective in whitening skin and at least one additional carotenoid, particularly carotenoids devoid of highly intense color.Type: GrantFiled: May 29, 2007Date of Patent: March 19, 2013Assignee: I.B.R. Israeli Biotechnology Research Ltd.Inventors: Liki Von Oppen Bezalel, Etienne Soudant, Inon Perry, Fumio Maniwa, Yuki Hata, Akemi Takayama
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Patent number: 8324920Abstract: To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate.Type: GrantFiled: July 28, 2009Date of Patent: December 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuki Hata, Tomoyuki Iwabuchi, Akihiro Kimura, Shuhei Nagatsuka
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Patent number: 8181882Abstract: The semiconductor device includes an antenna 101, a rectifier circuit 102, a first protection circuit 107, and a second protection circuit 108. The antenna 101 generates AC voltage. The rectifier circuit 102 rectifies the AC voltage and generates internal voltage Vin. The first protection circuit 107 includes a first diode 201 and a second diode 202. The second protection circuit 108 includes a capacitor 203 and a transistor 204. In the case where the absolute value of the AC voltage generated in the antenna 101 is larger than a certain value, the first protection circuit 107 cuts the surplus. The second protection circuit 108 functions in the case where the level of the internal voltage Vin generated in the rectifier circuit 102 is high. By changing resonant frequency, the second protection circuit 108 can decrease the number of signals input to the semiconductor device.Type: GrantFiled: October 2, 2009Date of Patent: May 22, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuki Hata, Koichiro Kamata
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Publication number: 20120032171Abstract: An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.Type: ApplicationFiled: July 29, 2011Publication date: February 9, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Toshihiko SAITO, Yuki HATA, Kiyoshi KATO
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Publication number: 20110297928Abstract: The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.Type: ApplicationFiled: May 27, 2011Publication date: December 8, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Atsuo ISOBE, Yoshinori IEDA, Keitaro IMAI, Kiyoshi KATO, Yuto YAKUBO, Yuki HATA
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Publication number: 20110298027Abstract: It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.Type: ApplicationFiled: May 25, 2011Publication date: December 8, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Atsuo Isobe, Yoshinori Ieda, Kiyoshi Kato, Yuto Yakubo, Yuki Hata
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Publication number: 20100084475Abstract: The semiconductor device includes an antenna 101, a rectifier circuit 102, a first protection circuit 107, and a second protection circuit 108. The antenna 101 generates AC voltage. The rectifier circuit 102 rectifies the AC voltage and generates internal voltage Vin. The first protection circuit 107 includes a first diode 201 and a second diode 202. The second protection circuit 108 includes a capacitor 203 and a transistor 204. In the case where the absolute value of the AC voltage generated in the antenna 101 is larger than a certain value, the first protection circuit 107 cuts the surplus. The second protection circuit 108 functions in the case where the level of the internal voltage Vin generated in the rectifier circuit 102 is high. By changing resonant frequency, the second protection circuit 108 can decrease the number of signals input to the semiconductor device.Type: ApplicationFiled: October 2, 2009Publication date: April 8, 2010Inventors: Yuki Hata, Koichiro Kamata
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Publication number: 20090311204Abstract: The present invention relates to use of carotenoid preparations for promoting skin whitening. Particularly, the present invention discloses that a combination of phytoene and phytofluene is effective in whitening skin. The present invention further relates to carotenoid compositions comprising a combination of phytofluene and phytofluene effective in whitening skin and at least one additional carotenoid, particularly carotenoids devoid of highly intense color.Type: ApplicationFiled: May 29, 2007Publication date: December 17, 2009Inventors: Liki Von Oppen Bezalel, Etienne Soudant, Inon Perry, Fumio Maniwa, Yuki Hata, Akemi Takayama
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Publication number: 20090284278Abstract: To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate.Type: ApplicationFiled: July 28, 2009Publication date: November 19, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuki Hata, Tomoyuki Iwabuchi, Akihiro Kimura, Shuhei Nagatsuka
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Patent number: 7570072Abstract: To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate.Type: GrantFiled: January 31, 2007Date of Patent: August 4, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuki Hata, Tomoyuki Iwabuchi, Akihiro Kimura, Shuhei Nagatsuka
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Publication number: 20080158217Abstract: An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion.Type: ApplicationFiled: December 18, 2007Publication date: July 3, 2008Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuki Hata, Jun Koyama, Shuhei Nagatsuka, Akihiro Kimura
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Publication number: 20070182442Abstract: To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate.Type: ApplicationFiled: January 31, 2007Publication date: August 9, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuki HATA, Tomoyuki IWABUCHI, Akihiro KIMURA, Shuhei NAGATSUKA