Abstract: This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 ?m or more, and when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 ?m, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Abstract: This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 ?m or more, and when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 ?m, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Abstract: This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 ?m or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

Abstract: A semiconductor optical device includes a first n-type III-V group compound semiconductor layer, an active layer, a tunnel junction structure including a p-type III-V group compound semiconductor layer and a second n-type III-V group compound semiconductor layer, and a third n-type III-V group compound semiconductor layer. The first n-type III-V group compound semiconductor layer, the active layer, the p-type III-V group compound semiconductor layer, the second n-type III-V group compound semiconductor layer, and the third n-type III-V group compound semiconductor layer are stacked in this order. The second n-type III-V group compound semiconductor layer has an n-type dopant concentration higher than an n-type dopant concentration of the third n-type III-V group compound semiconductor layer. The p-type III-V group compound semiconductor layer has a strain.

Abstract: A contactless power feed apparatus 1 has a relay circuit 4 relaying power transmitted from a power transmission device 2 to a power reception device 3 in a contactless manner. The power transmission device 2 has: a transmission coil 12 transmitting AC power to the relay circuit 4. The relay circuit 4 has: a first coil 31, electromagnetically coupled with the transmission coil 12 and receiving the AC power from the transmission coil 12; a second coil 32, transmitting the AC power to the power reception device 3; and a resonant capacitor 33, resonating with the AC power supplied to the transmission coil 12 together with the first and second coils 31, 32. The power reception device 3 has: a resonant circuit 20, having a reception coil 21 receiving AC power from the second coil 32 by being electromagnetically coupled with the second coil 32 of the relay circuit 4.

Abstract: This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 ?m or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

Abstract: A power reception device 3 includes: an estimation circuit 28 estimating a load resistance of an entire contactless power feed apparatus 1; and a reception-side communicator 27 transmitting an estimated value of the load resistance of the entire contactless power feed apparatus 1 to a power transmission device 2. The power transmission device 2 has a power supply circuit 11 supplying AC power to a transmission coil 12 supplying power to the power reception device 3. The power transmission device 2 further includes a control circuit 18 decreasing an input/output gain of a transmission-side DC-DC converter 31 included in the power supply circuit 11 by a predetermined amount when the estimated value of the load resistance is less than a predetermined allowed lower limit, and maintaining or increasing the input/output gain when the estimated value of the load resistance is equal to or greater than the predetermined allowed lower limit.

Abstract: This copper alloy powder includes a copper alloy that contains 5% by mass or more and 50% by mass or less of Ni. This copper alloy powder may contain 45% by mass or more and 95% by mass or less of Cu. This copper alloy powder may contain 1% by mass or more and 42% by mass or less of Zn. This copper alloy powder may contain 7% by mass or less of Mn.

Abstract: An information processing apparatus capable of providing address information of a line desired by a user. The information processing apparatus causes the user to select a line corresponding to the address information to be set in the near field wireless communication information, and sets the address information of the selected line in the near field wireless communication information, so as to transmit the near field wireless communication information, in which the address information of the line desired by the user is set, by near field wireless communication.

Abstract: A method of producing a rare earth iron-based sintered magnet according to an embodiment includes a step of filling a mold with a rare earth iron-based magnet powder produced by a rapid quenching method, a step of setting the mold in a sintering apparatus, supplying a predetermined current from electrodes, and pressurizing and heating the rare earth iron-based magnet powder filled to produce a sintered magnet body, and a step of magnetizing the sintered magnet body with a magnetizing device. The mold includes dies having a hollow cylindrical form, punches to be inserted into the dies, and die supports made of a conductive material and respectively disposed at both ends of the dies in an axial direction. A cavity to be formed by the dies and the punches is filled with the rare earth iron-based magnet powder.

Abstract: This copper alloy has a composition containing Mg in an amount of 0.10 mass % or greater and 2.6 mass % or less, with a balance being Cu and inevitable impurities, in which in a plastic deformation region of a stress-strain curve obtained in a low-speed tensile test at a strain rate of 1.0×10?6/s, an average value of a period of a strain of a saw edge-shaped curve is 0.01% or greater and 1.0% or less, an average value of a difference in level of stress of the saw edge-shaped curve is 0.1 MPa or greater and 2 MPa or less, and there are five or more saw edge-shaped curves with a period of strain of 0.01% or greater and 1.0% or less and a difference in the level of stress of 0.1 MPa or greater and 2 MPa or less.

Abstract: A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

Abstract: A service system includes a reservation section by which a reservation for a commodity or a service in a commercial facility can be made and specific information for an electric vehicle that visits the commercial facility can be set, a connection confirmation section that detects that an electric vehicle corresponding to the specific information set by the reservation section has been connected to a charge and discharge device of the commercial facility, and a notification section that notifies the commercial facility that connection of the electric vehicle corresponding to the specific information to the charge and discharge device has been detected by the connection confirmation section.

Abstract: A substrate cleaning apparatus includes: a support part configured to support a substrate by bring into contact with a rear surface of the substrate; an annular member disposed to surround a periphery of the substrate supported on the support part and including an inclined surface that is inclined with respect to a horizontal plane in a diametrical direction of the annular member; a rotation part configured to rotate the support part and the annular member; a first supply part configured to supply a cleaning liquid toward the rear surface of the substrate supported on the support part; and a second supply part configured to supply the cleaning liquid toward the inclined surface.

Abstract: A bonded body has a supporting substrate and a piezoelectric material layer bonded with the supporting substrate. The piezoelectric material layer has a first main surface bonded with the supporting substrate and a second main surface on the opposite side of the first main surface. The piezoelectric material layer has an argon atom-containing layer exposed at the second main surface.

Abstract: A foreign matter detection device includes: a plurality of detection coils (43-1 to 43-n) between a transmission coil (12) of a power transmission device (2) and a reception coil (21) of a power reception device (3), through which power is transmitted in a contactless manner; a plurality of capacitors (44-1 to 44-n) forming, for each of the detection coils, a resonance circuit together with the detection coil; a power supply circuit (41) supplying AC power having a predetermined frequency to each detection coil; and a detection circuit (45) detecting a voltage output from each detection coil and detecting a foreign matter entering between the transmission coil (12) and the reception coil (21) according to the voltage detected. Then, each detection coil is arranged to overlap by a predetermined amount that allows electromagnetic coupling between adjacent two of the detection coils (43-1 to 43-n) to be ignored.

Abstract: A control circuit controls a power supply circuit to generate transmitting power having a frequency varying within a frequency range. The control circuit determines a stably transmitting frequency based on a detected output voltage of a power receiver apparatus, the stably transmitting frequency indicating a frequency of the transmitting power at which dependency of the output voltage on a load value of the power receiver apparatus is at least locally minimized within the frequency range. The control circuit determines a transmitting voltage based on the detected output voltage, the transmitting voltage indicating a voltage of the transmitting power at which the output voltage reaches a target voltage when generating transmitting power having the stably transmitting frequency. The control circuit controls the power supply circuit to generate transmitting power having the stably transmitting frequency and the transmitting voltage.

Abstract: The present invention includes an imager, a cable that coats a cable core wire for performing at least one of inputting and outputting of signals between the imager and outside and supply of power to the imager from the outside, a first substrate that connects the imager to a first surface, and a second substrate that is connected to a first connection part different from a connection position of the imager on a second surface opposite to the first surface of the first substrate. In the cable core wire, relative to the second surface of the first substrate, at least part of a second connection part connected to the second substrate is positioned on a side opposite to a direction in which an image capturing surface of the imager is directed.

Abstract: Disclosed are chemicals suitable for use as a volatile precursor for vapor phase depositions of Ru containing materials, the chemical represented by the formula (NACD)-Ru-Lx, where x=1-3 and NACD is a non-aromatizable cyclic diene.

Abstract: The objective of the present invention is to provide a hydrogel having a favorable shape stability not only after releasing an anionic drug contained but also in the process of releasing such an anionic drug, compared with the conventional techniques; and an anionic drug-containing ophthalmic device obtained by applying the hydrogel. The objective can be achieved by an anionic drug-containing ophthalmic device comprising: (1) an anionic drug; and (2) a copolymer which comprises a cationic monomer and a monomer capable of copolymerizing with the cationic monomer, wherein the cationic monomer comprises, as a structural component, a condensation product of (meth)acrylic acid with an aminoalkyl quaternary ammonium compound having a substituted or unsubstituted aralkyl group, or a salt of the condensation product; and the like.