Abstract: A thin film transistor includes a metal oxide layer over the substrate, an oxide semiconductor layer having crystallinity in contact with the metal oxide layer, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <001> is less than or equal to 5%.

Abstract: An oxide semiconductor film having crystallinity over a substrate contains indium (In) and a first metal element (M1). The oxide semiconductor film includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an electron backscatter diffraction (EBSD) method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <111> is greater than an occupancy rate of the crystal orientation <001> and an occupancy rate of the crystal orientation <101>.

Abstract: A thin film transistor includes an oxide semiconductor layer having crystallinity over a substrate, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an EBSD method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <111> is greater than an occupancy rate of the crystal orientation <001> and an occupancy rate of the crystal orientation <101>.

Abstract: A carbon dioxide absorbent containing a cyclic amine compound (A) and a porous material (B), wherein the cyclic amine compound (A) has 35% by mol or more of a primary amino group with respect to total amino groups; a method for capturing carbon dioxide using the carbon dioxide absorbent; and a carbon dioxide separation and capture apparatus.

Abstract: An epoxy resin foam (D) obtained by foaming an epoxy resin composition (C) including an amine curing agent (A) and an epoxy resin (B), wherein the amine curing agent (A) includes a reaction product (a2) of an amine compound including a cyclic amine compound (a1) and carbon dioxide, and the cyclic amine compound (a1) has an amino group bonded to a primary carbon atom.

Abstract: An image processing apparatus includes a fixing unit including a belt, and a heater configured to heat the belt and including a substrate and a heating layer that is formed on the substrate, and a controller configured to shut off the heater if no current flows through the belt.

Abstract: A heating device includes a rotatable film, a heater disposed inside the film and including a substrate that extends along a first direction and having two surfaces opposite to each other, and a heater element on one of the surfaces of the substrate, and a heat conductor including a first portion contacting the other surface of the substrate, and a second portion that is adjacent to the first portion in a second direction perpendicular to the first direction and does not contact the other surface of the substrate. A width of the second portion is wider than the heater element in the second direction.

Abstract: The invention of the application is the invention regarding a semiconductor device and a method for driving the semiconductor device. The semiconductor device includes first and second transistors, first to fifth switches, first to third capacitors, and a display element.

Abstract: A foamable resin composition for molding a polyhydroxyurethane resin foam, including: the foamable resin composition including a foamable curing agent (A) including a reaction product (a2) of an amine compound (a1), and carbon dioxide and a cyclic carbonate compound (B) having 2 or more cyclic carbonate groups; a polyhydroxyurethane resin foam obtained by foam molding the foamable resin composition; a method for producing a polyhydroxyurethane resin foam including a step of foam molding the foamable resin composition; and a foamable curing agent for molding a polyhydroxyurethane resin foam, including a reaction product (a2) of an amine compound (a1) and carbon dioxide.

Abstract: A heating device includes a rotatable film, a heater disposed inside the film and including a substrate that extends along a first direction and having two surfaces opposite to each other, and a heater element on one of the surfaces of the substrate, and a heat conductor including a first portion contacting the other surface of the substrate, and a second portion that is adjacent to the first portion in a second direction perpendicular to the first direction and does not contact the other surface of the substrate. A width of the second portion is wider than the heater element in the second direction.

Abstract: A substrate structure includes a first substrate with a plurality of chip parts including a first chip part mounted, and a second substrate connected to the first substrate. The first chip part has a strain equal to or more than a predetermined value, which is from 500 ?ST to 4000 ?ST, in a non-connected state in which the second substrate is not connected to the first substrate and the first substrate is supported at two predetermined points. The strain of the first chip part is equal to or less than the predetermined value in a connected state in which the second substrate is connected to the first substrate and the first substrate is supported at the two predetermined points.

Abstract: Provided are a method for capturing carbon dioxide including irradiating a reaction product (c) of an amine compound (a) and a gas (b) containing carbon dioxide with electromagnetic waves to desorb carbon dioxide from the reaction product (c); and a carbon dioxide capture system including a housing part for housing a reaction product (c) of an amine compound (a) and a gas (b) containing carbon dioxide and an electromagnetic wave irradiation part for irradiating the reaction product (c) with the electromagnetic waves.

Abstract: Because power receiving and distributing equipment is configured with a plurality of devices combined together, it is sometimes difficult to perform inspection operation for the inspection items separated into those set for each individual device. Therefore, in the power receiving and distributing equipment, even if an attempt is made to associate each device with an inspection result, an inspection result of a plurality of devices that are grouped cannot be associated with each device. According to the present disclosure, an inspection result of the power receiving and distributing equipment can be associated with an inspection item of each device.

Abstract: A carbon dioxide absorbent containing a polyamine compound (A) having an alicyclic hydrocarbon structure, wherein a content of the polyamine compound (A) is 60% by mass or more.

Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: A carbon dioxide absorbent containing an amine compound (A) having a heterocyclic structure (X) selected from the group consisting of an oxygen-containing heterocyclic structure and a sulfur-containing heterocyclic structure, a content of the amine compound (A) being 65% by mass or more.

Abstract: Provided is a composite material having an excellent antibacterial property and a reduced elution of fluorine. A composite material according to the present disclosure includes a base material and a surface layer located at a surface of the base material. The surface layer contains a compound of titanium and fluorine and a compound of titanium, fluorine, and oxygen. An abundance of the compound of titanium and fluorine in the surface layer does not exceed an abundance of the compound of titanium, fluorine, and oxygen in the surface layer.

Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: An image processing apparatus includes a fixing unit including a belt, and a heater configured to heat the belt and including a substrate and a heating layer that is formed on the substrate, and a controller configured to shut off the heater if no current flows through the belt.

Abstract: An image processing apparatus includes a fixing unit including a fixing belt, and a heater configured to heat the fixing belt and including a substrate and a heating layer that is formed on the substrate, and a controller configured to, upon detecting an absence of a current flowing through the fixing belt, control the heater to not generate heat.