Abstract: A circuit array substrate is provided with thin-film transistors 4 and 5 and PIN diode 6 formed on insulation substrate 3. Active layer 11 and photo-electric sensor portion 21 are made of poly-silicon films. Impurities are doped into active layer 11 and photo-electric sensor portion 21 in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors 4 and 5 with prescribed characteristics and PIN diode 6 with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate 3 with a lesser number of processes.

Abstract: A gate insulating film is formed on a glass substrate on which a plurality of polysilicon films are formed as islands. A first meal layer formed on the gate insulating film is patterned to form gate electrodes on the gate insulating film facing a polysilicon layer which gives rise to thin film transistors. A second metal layer is formed on the gate insulating film to cover the gate electrodes. Wiring portions are stacked on the gate electrodes of the thin film transistors.

Abstract: An improved electrophotographic photosensitive device is disclosed. The device comprises a photosensitive layer coupled to a conductive substrate. The photosensitive layer preferably includes a vinyl chloride resin and the vinyl chloride resin preferably comprises an acid esterified vinyl chloride polymer having polymer hydroxy groups, epoxy groups and strong acid radicals as substituent groups, so that the epoxy groups and the hydroxy groups are partially esterified.

Abstract: A circuit array substrate is provided with thin-film transistors 4 and 5 and PIN diode 6 formed on insulation substrate 3. Active layer 11 and photo-electric sensor portion 21 are made of poly-silicon films. Impurities are doped into active layer 11 and photo-electric sensor portion 21 in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors 4 and 5 with prescribed characteristics and PIN diode 6 with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate 3 with a lesser number of processes.

Abstract: An insulated wire having excellent fabricability causing no cracking in the film even after severe winding or rolling fabrication and also having heat resistance comparable to that of polyamideimide is disclosed, in which a first insulation layer of a thermosetting resin composition having a Tg of 250° C. or higher is formed on a conductor, on which a second insulation layer formed of a mixture of a thermosetting resin composition having a Tg of 250° C. or higher and a thermoplastic resin composition having a Tg of 140° C.

Abstract: A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

Abstract: There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C.

Abstract: An insulated wire comprising a conductor and an insulating coating which has a tensile strength of at least 13 kg/mm.sup.2 and a Young's modulus of at least 270 kg/mm.sup.2, which has good flexibility and resistance to flaw.

Abstract: An insulated wire comprising a conductor and an insulating coating made from a polyamideimide base coating, which polyamideimide is made of an acid component and a diisocyanate component containing 10 to 80 % by mole of an aromatic diisocyanate compound of the formula: ##STR1## or which polyamideimide is made of an diisocyanate component and an imidodicarboxylic acid that is a reaction product of an acid component and a diamine component, in which the diamine component contains an aromatic diamine compound of the formula: ##STR2## and/or the diisocyanate component contains the above aromatic diisocyanate compound in such an amount that a total amount of the aromatic diamine compound and the diisocyanate compound is from 10 to 80 % by mole based on the total amount of the whole diamine component and the whole diisocyanate component.