Abstract: A laser processing method for forming a separation layer inside an ingot by using a laser beam includes a manufacturing a substrate by separating a portion of the ingot, the portion being located on a side of one side of the ingot, then evaluating the substrate to acquire information on optical characteristics in each of a plurality of regions on the one side of the ingot, then setting, for every one of the plurality of regions, irradiation conditions for the laser beam with reference to the information, and then forming the separation layer inside the ingot by irradiating the ingot with the laser beam from the one side with a focal point at which the laser beam is focused inside of the ingot.

Abstract: Provided are an information selection system, an information selection method, and an information selection program for efficiently and appropriately selecting information for use in information processing. A control unit of an assistance server generates a plurality of analysis models, using one or more pieces of information among information constituted by a plurality of pieces of training data, and calculates the accuracy of each of the analysis models. The control unit assigns distribution values according to each accuracy to information used for generating the analytical models, calculates statistics of the distribution values, for each piece of information used for generating the analytical models, and selects, using the statistics, information for use in generating the analytical models.

Abstract: A control unit of a support server identifies, with respect to input data, a nearby node among existing nodes. The control unit calculates the distance between the input data and the nearby node. If the distance is greater than a maximum distance, the control unit uses the input data to add a new node to the existing nodes, and updates the activity value and the age of the new node and the nearby node in accordance with the distance to the nearby node. The control unit generates a self-organizing map by using the activity value of each node and the activity value of each path to calculate an age-based degree of activity, and by determining the presence or absence of each node and each path according to the degree of activity.

Abstract: The model generation device according to one aspect of the present disclosure collects defective scene data related to a scene that is evaluated as insufficient performance during operations of automatic control using a control model of a mobile body, generates a patch model for supplementing a performance of the control model for the scene evaluated as insufficient performance from the collected defective scene data, and outputs the generated patch model.

Abstract: The present invention is drawn to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing an organoruthenium compound represented by the following formula 1, and further containing ?-diketone that is the same as a ligand of the organoruthenium compound. The raw material for chemical deposition of the present invention is inhibited in discoloration/precipitation even when heated at a high temperature, and enables to form a stable ruthenium thin film or ruthenium compound thin film. wherein substituents R1 and R2 are each hydrogen, or a linear or branched alkyl group.

Abstract: The control device according to one aspect of the present disclosure acquires movement condition data of a moving body, determines a movement mode according to the acquired movement condition data, selects one of a plurality of trained control models according to the result of determining the movement mode, derives a control command for the moving body by using the selected trained control model, and controls the operation of the moving body in accordance with the derived control command. Each trained control model is generated corresponding to the movement mode of the mobile body.

Abstract: A glass plate includes a first principal surface and a second principal surface facing away from the first principal surface, wherein the first principal surface includes an anti-glare surface, and the anti-glare surface includes a plurality of curvingly-recessed surfaces each of which has a spoon-cut shape.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer of a first conductivity type having a main surface, a source trench formed in the main surface and having a side wall and a bottom wall, a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench, a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench, and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.

Abstract: An SiC semiconductor device comprises: a chip that includes an SiC monocrystal and has a main surface; a trench structure that has a first side wall extending in an a-axis direction of the SiC monocrystal and a second side wall extending in an m-axis direction of the SiC monocrystal and is formed in the main surface; and a contact region of a first conductivity type that is formed in a region inside the chip along the trench structure at an interval in the m-axis direction from the first side wall.

Abstract: An SiC semiconductor device includes a chip that includes an SiC monocrystal and has a main surface, a trench structure that has a side wall and a bottom wall and is formed in the main surface, and a contact region of a first conductivity type that includes a first region formed in a region along the side wall in a surface layer portion of the main surface and a second region formed in a region along the bottom wall inside the chip and having an impurity concentration lower than an impurity concentration of the first region.

Abstract: A semiconductor device (1A) includes a chip (2) that includes an SiC monocrystal and has a main surface (3), a trench structure (20) that has a first side wall (22A) extending in an a-axis direction of the SiC monocrystal and a second side wall (22B) extending in an m-axis direction of the SiC monocrystal and is formed in the main surface, and a contact region (50) of a first conductivity type that is formed in a region inside the chip along the trench structure at an interval in the a-axis direction from the second side wall.

Abstract: A semiconductor device includes a chip having a main surface, a trench resistance structure formed in the main surface, a gate pad that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the trench resistance structure, and a gate wiring line that has a resistance value lower than that of the trench resistance structure and that is arranged on the trench resistance structure so as to be electrically connected to the gate pad via the trench resistance structure.

Abstract: There are provided an optical system and an imaging device including the same. The optical system includes: in order from an object side to an image side, a first lens group having refractive power; and a second lens group having positive refractive power. A variable distance that varies during focusing between the first lens group and the second lens group is closer to an object than a variable distance that varies during focusing between other lenses. The first lens group includes a positive lens and at least one or more negative lenses in order from the image side. The second lens group includes a lens subgroup 2A having positive refractive power, an aperture stop, and a lens subgroup 2B having positive refractive power in order from the object side. The lens subgroup 2B includes a negative lens and a positive lens in order from the object side and satisfies a predetermined Conditional Expression.

Abstract: A vehicle control device has a processor configured to generate a first traveling lane plan representing the traveling lane in which the vehicle is traveling within a first driving zone of a navigation route, to generate a first lane change plan representing movement of the vehicle between lanes, based on the first traveling lane plan or on surrounding environment information and, when the first lane change plan has been generated, to determine whether or not there exists a control transfer request zone at less than a first reference distance from the location of the vehicle on the post-movement traffic lane, or a lane change schedule zone at less than a second reference distance, and the first lane change plan is cancelled when such a control transfer request zone or lane change schedule zone exists.

Abstract: A vehicle reducing unease of a driver during driver assistance, provided with a display device configured to display a surrounding vehicle together with a host vehicle at a relative position calculated by an object recognition device, display a mark showing that a lane change is planned to be performed at a predetermined space for performing a lane change in a destination driving lane which is a destination for a lane change when an automatic lane change is planned to be performed, and make a position of the mark change in accordance with the relative position of the surrounding vehicle when there is a surrounding vehicle present having an effect on a lane change in the destination driving lane.

Abstract: A connector includes a power terminal, an LA terminal, a second housing portion, a heat storage member, and a cover. The power terminal is to be electrically connected to a mating terminal. The LA terminal is to be electrically connected to a cable. The heat storage member is erected at a connection portion between the power terminal and the LA terminal. The second housing portion includes a second housing space that houses the heat storage member. The cover sheathes an upper end opening of the second housing portion. The cover has a vent hole that penetrates the cover and communicates with the second housing space. The vent film is provided to the vent hole.

Abstract: A vehicle control device has a processor configured to determine whether a first road exists where the vehicle is to exit from the traveling road, and when a first road exists, to set a lane change schedule zone based on a first connecting location, to determine whether a second road located on the same side of the traveling direction of the vehicle as the first road exists between the current location of the vehicle and the first connecting location, to change a start location of the lane change schedule zone based on a second connecting location, when a second road exists and the start location of the lane change schedule zone is at a second connecting location, or before the second connecting location, and to notify the driver of the plan to move the vehicle between lanes while the vehicle is traveling in the lane change schedule zone.

Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.

Abstract: A vehicle reducing unease of a driver during driver assistance, provided with a display device configured to display a surrounding vehicle together with a host vehicle at a relative position calculated by an object recognition device, display a mark showing that a lane change is planned to be performed at a predetermined space for performing a lane change in a destination driving lane which is a destination for a lane change when an automatic lane change is planned to be performed, and make a position of the mark change in accordance with the relative position of the surrounding vehicle when there is a surrounding vehicle present having an effect on a lane change in the destination driving lane.

Abstract: A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body region of a second conductivity type, and a JFET region of the first conductivity type in contact with the body region on both sides on the drift layer; a plurality of trenches formed in an upper surface of the semiconductor substrate and extending in a first direction; and a gate electrode formed in the trenches and on the upper surface of the semiconductor substrate with an insulating film interposed therebetween. In a unit cell, a first trench group composed of a plurality of trenches lined up in a second direction that is orthogonal to the first direction and a second trench group composed of a plurality of trenches lined up in the second direction are lined up in the first direction, and have a channel region that is shallower than the trenches.