Patents by Inventor Yuki Nara

Yuki Nara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150293283
    Abstract: A near-infrared blocking filter includes a near-infrared absorbing substance, has a film thickness of 300 ?m or less, and has a visible light transmissivity in a wavelength range of 450 nm to 550 nm of 85% or more, a light transmissivity at a wavelength of 800 nm is 20% or less, and a light transmissivity at a wavelength of 850 nm is 20% or less.
    Type: Application
    Filed: June 26, 2015
    Publication date: October 15, 2015
    Applicant: FUJIFILM Corporation
    Inventors: Yuki NARA, Seongmu BAK, Toshihide EZOE, Takashi KAWASHIMA, Seiichi HITOMI
  • Publication number: 20150259547
    Abstract: There is provided a curable resin composition which is capable of being coated so as to have a film thickness of 20 ?m or more and contains a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm, and the infrared ray cut filter having a dye-containing layer having a film thickness of 20 ?m or more formed from the curable resin composition, and a production method of image sensor chip comprising a step of coating the curable resin composition on a glass substrate to form a dye-containing layer, and a step of adhering the glass plate having the dye-containing layer formed on a solid-state imaging device substrate.
    Type: Application
    Filed: May 29, 2015
    Publication date: September 17, 2015
    Applicant: FUJIFILM Corporation
    Inventors: Toshihide EZOE, Yuki NARA, Kazuto SHIMADA
  • Patent number: 8343800
    Abstract: The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-?, where 0.75<x<1.10 and 0<??1.29161×exp(?x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4, and a method of producing the thin film transistor.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: January 1, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Masayuki Suzuki, Atsushi Tanaka, Yuki Nara
  • Publication number: 20100320459
    Abstract: The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-?, where 0.75<x<1.10 and 0<??1.29161×exp(?x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4, and a method of producing the thin film transistor.
    Type: Application
    Filed: June 15, 2010
    Publication date: December 23, 2010
    Applicant: FUJIFILM CORPORATION
    Inventors: Kenichi UMEDA, Masayuki SUZUKI, Atsushi TANAKA, Yuki NARA
  • Patent number: 5567883
    Abstract: In the pressure gauge of the present invention, in order to prevent mounting screws from dropping off when the pressure gauge is not mounted on a fluid pressure equipment, a counterbore 11a for receiving a head 36a of a mounting screw 36 is formed on a front end of a screw insertion hole 11 on a case 2 of the pressure gauge 1, and with the mounting screw 36 passed through the screw insertion hole 11, a front cover 4 for covering the counterbore 11a is removably mounted on the front surface of the case 2.
    Type: Grant
    Filed: August 10, 1995
    Date of Patent: October 22, 1996
    Assignee: SMC Corporation
    Inventor: Yuki Nara