Abstract: A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality of microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Abstract: A microwave generation device includes: a magnetron having a cathode containing a filament and an anode containing a hollow resonator arranged to oppose to each other; a filament current measuring unit; and an application voltage measuring unit for measuring voltage applied to the filament. Based on the current and the voltage obtained by the current measuring unit and the voltage measuring unit, a resistance value calculation unit obtains a resistance value of the filament. A temperature calculation unit calculates the filament temperature from the resistance value and the resistance-temperature dependent characteristic. A filament power source is controlled by a power control unit so that the filament temperature is within a predetermined temperature range.

Abstract: A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality if microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for supplying a microwave into the processing vessel via the microwave transmitting plate; a shield lid grounded to cover a top of the planar antenna member; a waveguide for guiding the microwave to the planar antenna member; a member elevating mechanism for relatively varying a vertical distance between the planar antenna member and the shield lid; a tuning rod insertable into the waveguide; a tuning rod driving mechanism for moving the tuning rod to adjust an insert amount thereof; and a matching control section for controlling an elevation amount of the planar antenna member and the insert amount of the tuning rod to obtain a matching adjustment.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A fin member is installed in an oil accumulating room. The fin member causes lubrication oil to follow rotation of the oil accumulating room so that the lubrication oil can be forcibly rotated. In this manner, a rotational speed difference between the oil accumulating room and the lubrication oil is made small, and an adequate oil supplying pressure is generated by the centrifugal force. As a result, a sufficient quantity of the lubrication oil can be supplied. Therefore, estimation of a supplying oil quantity becomes easy, and accuracy in prediction of the lubrication oil quantity actually used for the bearing lubrication can be improved.

Abstract: A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality of microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Abstract: A fin member is installed in an oil accumulating room. The fin member causes lubrication oil to follow rotation of the oil accumulating room so that the lubrication oil can be forcibly rotated. In this manner, a rotational speed difference between the oil accumulating room and the lubrication oil is made small, and an adequate oil supplying pressure is generated by the centrifugal force. As a result, a sufficient quantity of the lubrication oil can be supplied. Therefore, estimation of a supplying oil quantity becomes easy, and accuracy in prediction of the lubrication oil quantity actually used for the bearing lubrication can be improved.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma processor with a microwave generating source mounted integrally on a shield lid by miniaturizing a matching circuit.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N?/4??/6 to N?/4??/6, where ? represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: For plasma generation, an impedance matching device and a process of controlling and detecting the impedance matching device are provided to satisfy a preset matching condition. The impedance matching device includes a tubular external conductor and an internal conductor disposed therein, a matching device body including a plurality of dielectrics, a moving mechanism, a storing unit for storing a data table, a measuring device, and a calculation control unit. The impedance detecting process includes inputting a progressive wave and a reflected wave outputted by a directional coupler connected to an object to be matched, generating different signals, and mixing the signals to determine relative phase differences and amplitude ratios of the signals, and detecting an input impedance of the object to be matched on a basis of the detected amplitude ratios and that of a true phase difference between the progressive wave and the reflected wave that is detected by referring to a relationship prepared in advance.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N&lgr;/4−&lgr;/6 to N&lgr;/4−&lgr;/6, where &lgr; represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.