Abstract: There is provided a semiconductor device including a multi-gate transistor having a plurality of gates in a common active region, in which the multi-gate transistor has a comb-shaped metal structure in which a first metal is drawn out and bundled in a W length direction from contacts arranged in a single row in each of a source region and a drain region, and the multi-gate transistor has a wiring layout in which a root section of the first metal coincides immediately above an end of the source region and the drain region or is disposed inside the end of the source region and the drain region in the W length direction.

Abstract: Provided is a structure with which a lung progenitor cells can proliferate while retaining an ability to differentiate into an alveolar epithelial cell and an airway epithelial cell. A structure of the present invention includes a core portion that includes a cell population, and an outer shell portion that covers at least a part of the core portion and contains a hydrogel. The structure has a storage elastic modulus of 150 Pa or more and/or the hydrogel contains alginic acid. The cell population contains an alveolar epithelial cell, an airway epithelial cell, and/or a progenitor cell thereof.

Abstract: Fluctuation and deterioration of characteristics of a semiconductor device are reduced. The semiconductor device includes a field effect transistor mounted on a semiconductor base.

Abstract: There is provided a semiconductor device including a multi-gate transistor having a plurality of gates in a common active region, in which the multi-gate transistor has a comb-shaped metal structure in which a first metal is drawn out and bundled in a W length direction from contacts arranged in a single row in each of a source region and a drain region, and the multi-gate transistor has a wiring layout in which a root section of the first metal coincides immediately above an end of the source region and the drain region or is disposed inside the end of the source region and the drain region in the W length direction.

Abstract: A sensing device is provided. The sensing device includes a heat regulation mechanism to regulate a temperature of a piezoelectric resonator corresponding to a voltage, and uses a sensing sensor to cause a sensing object to adsorb to and desorb from the piezoelectric resonator by increase and decrease of the temperature. A drive voltage is regulated to regulate an amplification factor of a heat regulation voltage input to a drive voltage regulator that regulates the temperature of the heat regulation mechanism corresponding to the type of a sensing sensor connected to a device main body. Therefore, when a CQCM sensor that heats a crystal resonator using a heater circuit and a TQCM sensor that regulates a heat of the crystal resonator sing a Peltier element are each used, regulation ranges of the driving powers supplied to the respective heater circuit and Peltier element can be changed.

Abstract: A sensing device that senses a substance to be sensed as a gas by causing a piezoelectric resonator to adsorb the substance to be sensed, includes: a substrate, a thermoelectric element unit, a support plate, and a base portion. A sensing module unit in which a substrate, a thermoelectric element unit, and a support plate are integrated is removably disposed to a base portion that performs at least one of heat supply and heat dissipation to the thermoelectric element unit.

Abstract: There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode layer that is provided on the gate insulating film and contains impurity ions; and source or drain regions that are provided on the semiconductor substrate on both sides of the gate electrode layer and contain conductive impurities, in which a concentration of the impurity ions in the gate electrode layer is higher than concentrations of the conductive impurities in the source or drain regions.

Abstract: To standardize a voltage regulator configured to regulate a voltage for regulating a temperature of a heat regulation mechanism without the heat regulation mechanism of a sensing sensor in a sensing device that includes the heat regulation mechanism to regulate a temperature of a piezoelectric resonator corresponding to a voltage and uses the sensing sensor to cause the sensing object to adsorb to and desorb from the piezoelectric resonator by increase and decrease of the temperature. A drive voltage is regulated to regulate an amplification factor of a heat regulation voltage input to a drive voltage regulator 73 that regulates the temperature of the heat regulation mechanism corresponding to the type of a sensing sensor 2 connected to a device main body 3.

Abstract: The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.

Abstract: A sensing sensor includes an oscillator circuit, a base, a connection portion, and a temperature changing unit. The oscillator circuit oscillates the piezoelectric resonator. The base includes a base main body in which a depressed portion is provided and a lid portion at one side, supports the piezoelectric resonator at another side, and is for taking the oscillation frequency to an outside of the sensing sensor. The depressed portion houses the oscillator circuit. The lid portion covers the depressed portion. The connection portion is disposed at the one side of the base and connected to a cooling mechanism for cooling the base from the one side. The temperature changing unit is interposed between the piezoelectric resonator and the base, so as to cool and heat the piezoelectric resonator and transfer a heat radiated for cooling the piezoelectric resonator from the other side of the base to the one side.

Abstract: A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.

Abstract: A sensing device that senses a substance to be sensed as a gas by causing a piezoelectric resonator to adsorb the substance to be sensed, includes: a substrate, a thermoelectric element unit, a support plate, and a base portion. A sensing module unit in which a substrate, a thermoelectric element unit, and a support plate are integrated is removably disposed to a base portion that performs at least one of heat supply and heat dissipation to the thermoelectric element unit.

Abstract: A sensing sensor includes an oscillator circuit, a base, a connection portion, and a temperature changing unit. The oscillator circuit oscillates the piezoelectric resonator. The base includes a base main body in which a depressed portion is provided and a lid portion at one side, supports the piezoelectric resonator at another side, and is for taking the oscillation frequency to an outside of the sensing sensor. The depressed portion houses the oscillator circuit. The lid portion covers the depressed portion. The connection portion is disposed at the one side of the base and connected to a cooling mechanism for cooling the base from the one side. The temperature changing unit is interposed between the piezoelectric resonator and the base, so as to cool and heat the piezoelectric resonator and transfer a heat radiated for cooling the piezoelectric resonator from the other side of the base to the one side.

Abstract: A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a Part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.

Abstract: A memory cell of the present disclosure includes: anti-fuses that are respectively inserted into a plurality of paths, one ends of the respective plurality of paths being coupled to one another; a resistor that is inserted into one or more of the plurality of paths; and a selection transistor that is turned on to couple a first coupling terminal to the one ends of the respective paths.

Abstract: [Object] An object of the present technology is to provide a semiconductor device, a CMOS circuit, and an electronic apparatus excellent in electric characteristics. [Solving Means] The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.

Abstract: A memory cell of the present disclosure includes: anti-fuses that are respectively inserted into a plurality of paths, one ends of the respective plurality of paths being coupled to one another; a resistor that is inserted into one or more of the plurality of paths; and a selection transistor that is turned on to couple a first coupling terminal to the one ends of the respective paths.

Abstract: Provided is a liquid detergent composition for clothing which is formed by blending (a) a nonionic surfactant represented by Formula (1), (b) an anionic surfactant represented by Formula (2), a predetermined amount of (c) an organic solvent having one or more hydroxyl groups, and water in which the mass ratio (b)/(a) of the blending amount of the component (b) to the blending amount of the component (a) is 0.5 or more and 10 or less.

Abstract: A memory device includes a memory cell which has one cell selection section and a storage section which is connected in series with respect to the cell selection section and which is selected as an access target for writing or reading by the cell selection section, in which the storage section is provided with a plurality of memory elements which are able to be written one time only and where information is held by changing resistance values in a non-written state and a written state.

Abstract: A semiconductor unit with memory devices, each of the memory devices includes: a first semiconductor layer; second and third semiconductor layers; a first dielectric film and a first conductive film; first, second, and third electrodes electrically connected to the second semiconductor layer, the third semiconductor layer, and the first conductive film, respectively, the third electrode being electrically connected to the first electrode. In the memory devices, when a voltage equal to or higher than a predetermined threshold value is applied between the first and second electrodes, a filament that is a conductive path electrically linking the second and third semiconductor layers is formed in the region between the second and third semiconductor layers, and thereby, writing operation of information is performed.