Patents by Inventor Yuki Yanagisawa

Yuki Yanagisawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210104655
    Abstract: To standardize a voltage regulator configured to regulate a voltage for regulating a temperature of a heat regulation mechanism without the heat regulation mechanism of a sensing sensor in a sensing device that includes the heat regulation mechanism to regulate a temperature of a piezoelectric resonator corresponding to a voltage and uses the sensing sensor to cause the sensing object to adsorb to and desorb from the piezoelectric resonator by increase and decrease of the temperature. A drive voltage is regulated to regulate an amplification factor of a heat regulation voltage input to a drive voltage regulator 73 that regulates the temperature of the heat regulation mechanism corresponding to the type of a sensing sensor 2 connected to a device main body 3.
    Type: Application
    Filed: March 25, 2019
    Publication date: April 8, 2021
    Applicant: NIHON DEMPA KOGYO CO., LTD.
    Inventors: Yuki YANAGISAWA, Hiroyuki KUKITA
  • Patent number: 10950726
    Abstract: The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: March 16, 2021
    Assignee: SONY CORPORATION
    Inventor: Yuki Yanagisawa
  • Patent number: 10931235
    Abstract: A sensing sensor includes an oscillator circuit, a base, a connection portion, and a temperature changing unit. The oscillator circuit oscillates the piezoelectric resonator. The base includes a base main body in which a depressed portion is provided and a lid portion at one side, supports the piezoelectric resonator at another side, and is for taking the oscillation frequency to an outside of the sensing sensor. The depressed portion houses the oscillator circuit. The lid portion covers the depressed portion. The connection portion is disposed at the one side of the base and connected to a cooling mechanism for cooling the base from the one side. The temperature changing unit is interposed between the piezoelectric resonator and the base, so as to cool and heat the piezoelectric resonator and transfer a heat radiated for cooling the piezoelectric resonator from the other side of the base to the one side.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: February 23, 2021
    Assignee: NIHON DEMPA KOGYO CO., LTD.
    Inventors: Yuki Yanagisawa, Hiroyuki Kukita, Shohei Nakagawa
  • Patent number: 10886407
    Abstract: A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: January 5, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yuki Yanagisawa
  • Publication number: 20200378924
    Abstract: A sensing device that senses a substance to be sensed as a gas by causing a piezoelectric resonator to adsorb the substance to be sensed, includes: a substrate, a thermoelectric element unit, a support plate, and a base portion. A sensing module unit in which a substrate, a thermoelectric element unit, and a support plate are integrated is removably disposed to a base portion that performs at least one of heat supply and heat dissipation to the thermoelectric element unit.
    Type: Application
    Filed: May 26, 2020
    Publication date: December 3, 2020
    Applicants: NIHON DEMPA KOGYO CO., LTD., JAPAN AEROSPACE EXPLORATION AGENCY
    Inventors: Hiroyuki KUKITA, Tsuyoshi SHIOBARA, Yuki YANAGISAWA, Shohei NAKAGAWA, Eiji MIYAZAKI, Yuta TSUCHIYA
  • Publication number: 20200274493
    Abstract: A sensing sensor includes an oscillator circuit, a base, a connection portion, and a temperature changing unit. The oscillator circuit oscillates the piezoelectric resonator. The base includes a base main body in which a depressed portion is provided and a lid portion at one side, supports the piezoelectric resonator at another side, and is for taking the oscillation frequency to an outside of the sensing sensor. The depressed portion houses the oscillator circuit. The lid portion covers the depressed portion. The connection portion is disposed at the one side of the base and connected to a cooling mechanism for cooling the base from the one side. The temperature changing unit is interposed between the piezoelectric resonator and the base, so as to cool and heat the piezoelectric resonator and transfer a heat radiated for cooling the piezoelectric resonator from the other side of the base to the one side.
    Type: Application
    Filed: February 26, 2020
    Publication date: August 27, 2020
    Applicant: NIHON DEMPA KOGYO CO., LTD.
    Inventors: Yuki YANAGISAWA, Hiroyuki KUKITA, Shohei NAKAGAWA
  • Publication number: 20200066909
    Abstract: A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a Part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.
    Type: Application
    Filed: November 17, 2017
    Publication date: February 27, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yuki YANAGISAWA
  • Patent number: 10355003
    Abstract: A memory cell of the present disclosure includes: anti-fuses that are respectively inserted into a plurality of paths, one ends of the respective plurality of paths being coupled to one another; a resistor that is inserted into one or more of the plurality of paths; and a selection transistor that is turned on to couple a first coupling terminal to the one ends of the respective paths.
    Type: Grant
    Filed: November 27, 2015
    Date of Patent: July 16, 2019
    Assignee: SONY CORPORATION
    Inventor: Yuki Yanagisawa
  • Publication number: 20190131455
    Abstract: [Object] An object of the present technology is to provide a semiconductor device, a CMOS circuit, and an electronic apparatus excellent in electric characteristics. [Solving Means] The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.
    Type: Application
    Filed: March 16, 2017
    Publication date: May 2, 2019
    Applicant: SONY CORPORATION
    Inventor: YUKI YANAGISAWA
  • Publication number: 20180019247
    Abstract: A memory cell of the present disclosure includes: anti-fuses that are respectively inserted into a plurality of paths, one ends of the respective plurality of paths being coupled to one another; a resistor that is inserted into one or more of the plurality of paths; and a selection transistor that is turned on to couple a first coupling terminal to the one ends of the respective paths.
    Type: Application
    Filed: November 27, 2015
    Publication date: January 18, 2018
    Inventor: YUKI YANAGISAWA
  • Patent number: 9598663
    Abstract: Provided is a liquid detergent composition for clothing which is formed by blending (a) a nonionic surfactant represented by Formula (1), (b) an anionic surfactant represented by Formula (2), a predetermined amount of (c) an organic solvent having one or more hydroxyl groups, and water in which the mass ratio (b)/(a) of the blending amount of the component (b) to the blending amount of the component (a) is 0.5 or more and 10 or less.
    Type: Grant
    Filed: December 25, 2013
    Date of Patent: March 21, 2017
    Assignee: Kao Corporation
    Inventors: Ayako Kita, Yuki Yanagisawa, Masataka Maki
  • Patent number: 9478307
    Abstract: A memory device includes a memory cell which has one cell selection section and a storage section which is connected in series with respect to the cell selection section and which is selected as an access target for writing or reading by the cell selection section, in which the storage section is provided with a plurality of memory elements which are able to be written one time only and where information is held by changing resistance values in a non-written state and a written state.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: October 25, 2016
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Yuki Yanagisawa
  • Patent number: 9336895
    Abstract: A semiconductor unit with memory devices, each of the memory devices includes: a first semiconductor layer; second and third semiconductor layers; a first dielectric film and a first conductive film; first, second, and third electrodes electrically connected to the second semiconductor layer, the third semiconductor layer, and the first conductive film, respectively, the third electrode being electrically connected to the first electrode. In the memory devices, when a voltage equal to or higher than a predetermined threshold value is applied between the first and second electrodes, a filament that is a conductive path electrically linking the second and third semiconductor layers is formed in the region between the second and third semiconductor layers, and thereby, writing operation of information is performed.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: May 10, 2016
    Assignee: SONY CORPORATION
    Inventors: Yuki Yanagisawa, Shigeru Kanematsu, Matsuo Iwasaki
  • Publication number: 20150337244
    Abstract: Provided is a liquid detergent composition for clothing which is formed by blending (a) a nonionic surfactant represented by Formula (1), (b) an anionic surfactant represented by Formula (2), a predetermined amount of (c) an organic solvent having one or more hydroxyl groups, and water in which the mass ratio (b)/(a) of the blending amount of the component (b) to the blending amount of the component (a) is 0.
    Type: Application
    Filed: December 25, 2013
    Publication date: November 26, 2015
    Applicant: KAO CORPORATION
    Inventors: Ayako KITA, Yuki YANAGISAWA, Masataka MAKI
  • Publication number: 20150302932
    Abstract: A semiconductor unit with memory devices, each of the memory devices includes: a first semiconductor layer; second and third semiconductor layers; a first dielectric film and a first conductive film; first, second, and third electrodes electrically connected to the second semiconductor layer, the third semiconductor layer, and the first conductive film, respectively, the third electrode being electrically connected to the first electrode. In the memory devices, when a voltage equal to or higher than a predetermined threshold value is applied between the first and second electrodes, a filament that is a conductive path electrically linking the second and third semiconductor layers is formed in the region between the second and third semiconductor layers, and thereby, writing operation of information is performed.
    Type: Application
    Filed: April 8, 2013
    Publication date: October 22, 2015
    Inventors: Yuki Yanagisawa, Shigeru Kanematsu, Matsuo Iwasaki
  • Patent number: 9082823
    Abstract: A semiconductor device, includes: a first semiconductor layer having a first conductivity type; a pair of first electrodes arranged to be separated from each other in the first semiconductor layer; a second electrode provided on the first semiconductor layer between the pair of first electrodes with a dielectric film in between; and a pair of connection sections electrically connected to the pair of first electrodes, wherein one or both of the pair of first electrodes are divided into a first region and a second region, the first region and the second region being connected by a bridge section.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: July 14, 2015
    Assignee: Sony Corporation
    Inventors: Shoji Kobayashi, Yuki Yanagisawa
  • Publication number: 20150103579
    Abstract: A memory device includes a memory cell which has one cell selection section and a storage section which is connected in series with respect to the cell selection section and which is selected as an access target for writing or reading by the cell selection section, in which the storage section is provided with a plurality of memory elements which are able to be written one time only and where information is held by changing resistance values in a non-written state and a written state.
    Type: Application
    Filed: September 11, 2014
    Publication date: April 16, 2015
    Inventor: Yuki Yanagisawa
  • Publication number: 20140268984
    Abstract: Provided is a semiconductor device that includes: a storage element including a first terminal, a second terminal, and a third terminal, and in which a resistance state between the second terminal and the third terminal is changed from a high resistance state to a low resistance state based on a stress current that flows between the first terminal and the second terminal; and a fuse connected to the first terminal, and configured to change from a conductive state to a non-conductive state based on the stress current.
    Type: Application
    Filed: February 18, 2014
    Publication date: September 18, 2014
    Applicant: SONY CORPORATION
    Inventor: Yuki Yanagisawa
  • Publication number: 20140239441
    Abstract: A semiconductor device, includes: a first semiconductor layer having a first conductivity type; a pair of first electrodes arranged to be separated from each other in the first semiconductor layer; a second electrode provided on the first semiconductor layer between the pair of first electrodes with a dielectric film in between; and a pair of connection sections electrically connected to the pair of first electrodes, wherein one or both of the pair of first electrodes are divided into a first region and a second region, the first region and the second region being connected by a bridge section.
    Type: Application
    Filed: February 20, 2014
    Publication date: August 28, 2014
    Applicant: Sony Corporation
    Inventors: Shoji Kobayashi, Yuki Yanagisawa
  • Patent number: 8797782
    Abstract: An operation method of a semiconductor device, includes providing one or more memory elements each including a first semiconductor layer, second and third semiconductor layers, a dielectric film and a conductive film, a first electrode, a second electrode, and a third electrode, and performing operation of writing information on a memory element to be driven of the one or more memory elements. The operation of writing is performed by forming a filament in a region between the second and third semiconductor layers, which is a conductive path electrically linking these semiconductor layers, the filament being formed by causing a dielectric breakdown of at least a part of the dielectric film, through application of a voltage equal to or higher than a predetermined threshold between the second and third electrodes, thereby causing an electric current to flow between the conductive film and the third semiconductor layer.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: August 5, 2014
    Assignee: Sony Corporation
    Inventors: Shigeru Kanematsu, Yuki Yanagisawa, Matsuo Iwasaki