Patents by Inventor Yukie Suzuki
Yukie Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140240175Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.Type: ApplicationFiled: May 5, 2014Publication date: August 28, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie SUZUKI, Yasuyuki ARAI, Shunpei YAMAZAKI
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Patent number: 8783577Abstract: It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.Type: GrantFiled: March 9, 2006Date of Patent: July 22, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
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Patent number: 8742480Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.Type: GrantFiled: April 7, 2011Date of Patent: June 3, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
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Publication number: 20130265518Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: June 4, 2013Publication date: October 10, 2013Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 8541785Abstract: An object is to reduce an occupied area of a protection circuit. Another object is to increase the reliability of a display device including the protection circuit. The protection circuit includes a first wiring over a substrate, an insulating film over the first wiring, and a second wiring over the insulating film.Type: GrantFiled: February 5, 2009Date of Patent: September 24, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kunio Hosoya, Saishi Fujikawa, Yukie Suzuki
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Patent number: 8462286Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: November 20, 2012Date of Patent: June 11, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Patent number: 8455954Abstract: The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.Type: GrantFiled: April 12, 2012Date of Patent: June 4, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
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Patent number: 8405116Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).Type: GrantFiled: March 12, 2010Date of Patent: March 26, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yasuo Nakamura, Yukie Suzuki, Yoshitaka Moriya
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Patent number: 8334537Abstract: A method of manufacturing, with high mass productivity, light-emitting devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: June 24, 2008Date of Patent: December 18, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara
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Patent number: 8325285Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: December 21, 2011Date of Patent: December 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Patent number: 8258025Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.Type: GrantFiled: August 2, 2010Date of Patent: September 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Yasuyuki Arai, Takayuki Inoue, Erumu Kikuchi
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Publication number: 20120193694Abstract: The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.Type: ApplicationFiled: April 12, 2012Publication date: August 2, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie SUZUKI, Yasuyuki ARAI, Shunpei YAMAZAKI
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Publication number: 20120086012Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: December 21, 2011Publication date: April 12, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 8148259Abstract: The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.Type: GrantFiled: August 23, 2007Date of Patent: April 3, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuyuki Arai, Koichiro Tanaka, Yukie Suzuki
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Patent number: 8111362Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: June 7, 2010Date of Patent: February 7, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Patent number: 8043901Abstract: The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.Type: GrantFiled: August 14, 2008Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yukie Suzuki, Yoshiyuki Kurokawa
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Publication number: 20110180811Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.Type: ApplicationFiled: April 7, 2011Publication date: July 28, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yukie SUZUKI, Yasuyuki ARAI, Shunpei YAMAZAKI
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Patent number: 7928910Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.Type: GrantFiled: March 23, 2006Date of Patent: April 19, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
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Publication number: 20110039402Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.Type: ApplicationFiled: August 2, 2010Publication date: February 17, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Yasuyuki ARAI, Takayuki INOUE, Erumu KIKUCHI
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Patent number: 7888681Abstract: A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.Type: GrantFiled: August 14, 2008Date of Patent: February 15, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yukie Suzuki, Yoshiyuki Kurokawa