Abstract: A thermal processing device includes a waiting section, a heating section and a transport mechanism. The waiting section includes a plurality of support pins. The transport mechanism includes a transport arm for holding a substrate and transports the substrate between the waiting section and the heating section by moving the transport arm. The transport arm has a plurality of regions and a plurality of cooling water passages for respectively cooling the plurality of regions are provided in the transport arm.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: In a substrate processing apparatus, a storage device, an indexer block, a processing block and an interface block are arranged to line up in this order. The storage device includes a plurality of openers on which a carrier storing a plurality of substrates can be placed. The carrier is carried in the storage device. In the storage device, the carrier is transported among the plurality of openers by a transport device. The transport device includes first and second hands configured to be able to hold the carrier and move in a horizontal direction and a vertical direction. The second hand is provided below the first hand.

Abstract: A treating liquid vaporizing apparatus includes a buffer tank for storing a treating liquid, a vaporizing container connected to the buffer tank for vaporizing the treating liquid, a further vaporizing container connected to the buffer tank in parallel with the vaporizing container for vaporizing the treating liquid, a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the vaporizing container, and a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the further vaporizing container.

Abstract: A substrate treating apparatus includes a treating section for treating substrates. The treating section has a front face and a rear face both connectable to an indexer section for feeding the substrates to the treating section. Such substrate treating apparatus can improve the degree of freedom for arranging the treating section and the indexer section.

Abstract: One processing block is arranged between an indexer block and another processing block. One substrate is transported to a main transport mechanism in the one processing block by a main transport mechanism in the indexer block, transported to a first processing section and a thermal processing section by the main transport mechanism in the one processing block and processing is performed on the substrate. The substrate after the processing is transported to the main transport mechanism in the indexer block by the main transport mechanism in the one processing block. Another substrate is transported to a sub-transport mechanism in a sub-transport chamber by the main transport mechanism in the indexer block, and is transported to a main transport mechanism in another processing block by the sub-transport mechanism in the sub-transport chamber.

Abstract: A substrate is transported to a coating processing unit. An annular region of one surface of the substrate is processed. The substrate is carried into an edge exposure unit. Positions of a peripheral edge of the substrate and an inner edge of the annular region are detected. A position deviation amount of a center of the substrate held by a spin chuck from a rotation center of the spin chuck is calculated. Based on schedule management information, a relationship between orientations of the substrate held by the spin chuck at the time of carrying of the substrate into the coating processing unit and the substrate held by the substrate rotation unit at the time of carrying of the substrate into the edge exposure unit is specified. Based on the relationship, a position deviation direction of the center of the substrate from the rotation center is determined.

Abstract: A substrate treating apparatus includes a front heat-treating block, a front relay block and a solution treating block. The front heat-treating block has heat-treating units and main transport mechanisms. The front relay block has receivers and transport mechanisms. The solution treating block has solution treating units and transport mechanisms for solution treatment. The front heat-treating block and front relay block are connected to be able to transport substrates reciprocally. The front relay block and solution treating block are connected to be able to transport the substrates reciprocally. The front relay block is disposed between the solution treating block and front heat-treating block.

Abstract: One processing block is arranged between an indexer block and another processing block. One substrate is transported to a main transport mechanism in the one processing block by a main transport mechanism in the indexer block, transported to a first processing section and a thermal processing section by the main transport mechanism in the one processing block and processing is performed on the substrate. The substrate after the processing is transported to the main transport mechanism in the indexer block by the main transport mechanism in the one processing block. Another substrate is transported to a sub-transport mechanism in a sub-transport chamber by the main transport mechanism in the indexer block, and is transported to a main transport mechanism in another processing block by the sub-transport mechanism in the sub-transport chamber.

Abstract: A coating method includes a step of forming a film of a coating solution having a larger thickness in a central region of a substrate than in an edge region of the substrate by discharging droplets of the coating solution from a plurality of nozzles formed on an inkjet head to the substrate, and a step of moving the coating solution in the film from the central region toward the edge region of the substrate by rotating the substrate. This reduces a difference in thickness of the film between the central region and the edge region of the substrate, thereby to make the film thickness substantially uniform. At the same time, the movement of the coating solution in the film can make the surface of the film smoother.

Abstract: Positions of an outer periphery of a rotating substrate and a processing liquid nozzle are detected. An amplitude of a change with time of the position of the outer periphery of the substrate detected during rotation is acquired. In a direction passing through a rotational center and parallel with the rotating substrate, a relative position of the processing liquid nozzle with respect to the spin chuck is periodically changed at a frequency equal to a rotational frequency of the spin chuck and the acquired amplitude. A difference between a phase of a change with time of the position of the processing liquid nozzle and a phase of a change with time of the position of the outer periphery of the substrate is adjusted to not more than a predetermined value. A processing liquid is discharged from the processing liquid nozzle to a peripheral portion of the rotating substrate.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: A coating head is constructed of a solvent feed mechanism connected to a forward side in a direction of movement of a coating solution feed mechanism, and a gas jet mechanism connected to a rearward side in the direction of movement. While moving the coating head relative to a substrate, a solvent is supplied onto the substrate from the solvent feed mechanism, then a coating solution is supplied onto a film of the solvent from the coating solution feed mechanism, and finally a gas is jetted to an uneven surface of the coating solution from the gas jet mechanism to smooth a thin film surface of the coating solution.

Abstract: In an entire region exposure unit, a platform section and a local transfer mechanism are arranged in one direction. The local transfer mechanism is provided with a local transfer hand. A substrate on which a resist film having a predetermined pattern is formed is held by the local transfer hand. A light-emitting device is attached to the upper portion of the local transfer mechanism. Strip-shaped light is emitted from the light-emitting device toward below. The local transfer mechanism operates such that the local transfer hand is moved relative to the light-emitting device. At this time, the light-emitting device irradiates one surface of the substrate that is moving horizontally with the strip-shaped light. The resist film is modified by the light.

Abstract: In a substrate processing apparatus, a storage device, an indexer block, a processing block and an interface block are arranged to line up in this order. The storage device includes a plurality of openers on which a carrier storing a plurality of substrates can be placed. The carrier is carried in the storage device. In the storage device, the carrier is transported among the plurality of openers by a transport device. The transport device includes first and second hands configured to be able to hold the carrier and move in a horizontal direction and a vertical direction. The second hand is provided below the first hand.

Abstract: In a substrate processing apparatus, a storage device, an indexer block, a processing block and an interface block are arranged to line up in this order. The storage device includes a plurality of openers on which a carrier storing a plurality of substrates can be placed. The carrier is carried in the storage device. In the storage device, the carrier is transported among the plurality of openers by a transport device. The transport device includes first and second hands configured to be able to hold the carrier and move in a horizontal direction and a vertical direction. The second hand is provided below the first hand.

Abstract: One processing block is arranged between an indexer block and another processing block. One substrate is transported to a main transport mechanism in the one processing block by a main transport mechanism in the indexer block, transported to a first processing section and a thermal processing section by the main transport mechanism in the one processing block and processing is performed on the substrate. The substrate after the processing is transported to the main transport mechanism in the indexer block by the main transport mechanism in the one processing block. Another substrate is transported to a sub-transport mechanism in a sub-transport chamber by the main transport mechanism in the indexer block, and is transported to a main transport mechanism in another processing block by the sub-transport mechanism in the sub-transport chamber.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: In an entire region exposure unit, a platform section and a local transfer mechanism are arranged in one direction. The local transfer mechanism is provided with a local transfer hand. A substrate on which a resist film having a predetermined pattern is formed is held by the local transfer hand. A light-emitting device is attached to the upper portion of the local transfer mechanism. Strip-shaped light is emitted from the light-emitting device toward below. The local transfer mechanism operates such that the local transfer hand is moved relative to the light-emitting device. At this time, the light-emitting device irradiates one surface of the substrate that is moving horizontally with the strip-shaped light. The resist film is modified by the light.