Abstract: An optical waveguide sensor includes a substrate and an optical waveguide. The optical waveguide includes a core and a lateral clad. The core extends in a spiral shape above a surface of the substrate. The lateral clad is disposed in a same layer as the core above the surface of the substrate and is in contact with either side surfaces of the core. At least a part of a surface of the core located opposite from the substrate is a transmission surface from which light leaks and is absorbed by a detected object.

Abstract: A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant “a,” each of the quantum barrier layers has a lattice constant “b,” and the quantum well layer has a lattice constant “c,” the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b<a<c or c<a<b.

Abstract: A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

Abstract: A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

Abstract: An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.

Abstract: A method for manufacturing an optical device having an optical block, through which a light is transmitted, is provided. The method includes steps of: forming a plurality of silicon oxide members, which is disposed on a silicon substrate, wherein the silicon oxide members are arranged in parallel each other by a predetermined clearance between two adjacent silicon oxide members; and pouring a super critical fluid into the clearance so that the clearance is filled with a product formed from a predetermined compound for forming the optical block, wherein the predetermined compound is dissolved in the super critical fluid.

Abstract: A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.

Abstract: A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

Abstract: A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.

Abstract: An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

Abstract: An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.

Abstract: A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Abstract: A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

Abstract: A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.

Abstract: A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.

Abstract: A method for manufacturing an optical device having an optical block, through which a light is transmitted, is provided. The method includes steps of: forming a plurality of silicon oxide members, which is disposed on a silicon substrate, wherein the silicon oxide members are arranged in parallel each other by a predetermined clearance between two adjacent silicon oxide members; and pouring a super critical fluid into the clearance so that the clearance is filled with a product formed from a predetermined compound for forming the optical block, wherein the predetermined compound is dissolved in the super critical fluid.

Abstract: A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.

Abstract: An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen ?m easily. Therefore, connection loss between a light source and the device is reduced.

Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.