Patents by Inventor Yukihiro Takeuchi
Yukihiro Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7158895Abstract: The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising: calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity andType: GrantFiled: February 10, 2005Date of Patent: January 2, 2007Assignee: Denso CorporationInventors: Yukihiro Sano, Yukihiro Takeuchi, Yositugu Abe
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Patent number: 7129176Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.Type: GrantFiled: January 20, 2004Date of Patent: October 31, 2006Assignee: Denso CorporationInventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiro Takeuchi, Toshiyuki Morishita
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Publication number: 20060213268Abstract: An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.Type: ApplicationFiled: March 21, 2006Publication date: September 28, 2006Applicant: DENSO CORPORATIONInventors: Kazushi Asami, Yukihiro Takeuchi, Kenichi Yokoyama
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Patent number: 7107846Abstract: A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.Type: GrantFiled: November 3, 2005Date of Patent: September 19, 2006Assignee: Denso CorporationInventors: Kazuhiko Kano, Tetsuo Yoshioka, Takao Iwaki, Yukihiro Takeuchi
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Publication number: 20060194332Abstract: A more reliable gas sensor includes a support film formed on a surface of a substrate and a heater electrode. Surrounding the heater electrode is a heater electrical insulation layer 4. Detection electrodes are formed above the electrical insulation layer. A flat insulating layer is formed over the heater insulation layer, and surfaces of the detection electrodes are exposed and flush with the upper surface of the flat insulating layer. A sensitive film is formed above the flat insulating layer in contact with the surfaces of the detection electrodes. A hollow cavity is formed in the substrate.Type: ApplicationFiled: April 25, 2006Publication date: August 31, 2006Applicant: DENSO CORPORATIONInventors: Hiroyuki Wado, Makiko Sugiura, Yukihiro Takeuchi, Takao Iwaki
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Publication number: 20060158713Abstract: A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.Type: ApplicationFiled: December 20, 2005Publication date: July 20, 2006Applicant: DENSO CORPORATIONInventors: Yukihiro Takeuchi, Nobuaki Kawahara, Takahiko Yoshida
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Publication number: 20060053890Abstract: A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.Type: ApplicationFiled: November 3, 2005Publication date: March 16, 2006Inventors: Kazuhiko Kano, Tetsuo Yoshioka, Takao Iwaki, Yukihiro Takeuchi
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Patent number: 7004026Abstract: A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.Type: GrantFiled: November 10, 2003Date of Patent: February 28, 2006Assignee: Denso CorporationInventors: Kazuhiko Kano, Tetsuo Yoshioka, Takao Iwaki, Yukihiro Takeuchi
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Publication number: 20050265662Abstract: An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen ?m easily. Therefore, connection loss between a light source and the device is reduced.Type: ApplicationFiled: May 31, 2005Publication date: December 1, 2005Inventors: Junji Oohara, Shinji Yoshihara, Yukihiro Takeuchi
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Publication number: 20050182574Abstract: A method of detecting hydrogen concentration, while maintaining high precision, is provided.Type: ApplicationFiled: February 9, 2005Publication date: August 18, 2005Inventors: Yukihiro Sano, Yukihiro Takeuchi, Yositugu Abe
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Patent number: 6909158Abstract: A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.Type: GrantFiled: November 10, 2003Date of Patent: June 21, 2005Assignee: Denso CorporationInventors: Tetsuo Yoshioka, Yukihiro Takeuchi, Kazuhiko Kano
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Patent number: 6906394Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: GrantFiled: May 30, 2003Date of Patent: June 14, 2005Assignee: Denso CorporationInventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Publication number: 20050054153Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.Type: ApplicationFiled: September 9, 2004Publication date: March 10, 2005Inventors: Kazushi Asami, Junji Oohara, Hiroshi Muto, Kazuhiko Sugiura, Tsuyoshi Fukada, Yukihiro Takeuchi
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Publication number: 20040231421Abstract: A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.Type: ApplicationFiled: April 29, 2004Publication date: November 25, 2004Inventors: Tetsuo Yoshioka, Akihiko Teshigahara, Junji Ohara, Yukihiro Takeuchi, Toshimasa Yamamoto, Kazuhiko Kano
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Publication number: 20040173862Abstract: An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.Type: ApplicationFiled: January 20, 2004Publication date: September 9, 2004Applicant: DENSO CORPORATIONInventors: Junji Oohara, Kazuhiko Kano, Yoshitaka Noda, Yukihiro Takeuchi, Toshiyuki Morishita
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Patent number: 6786089Abstract: An airflow meter has a member that defines a bypass passage. The bypass passage has a sensing passage in which a sensor tip is disposed. The sensing passage is restricted in at least a lateral direction that is a direction perpendicular to both a longitudinal direction of the sensing passage and a perpendicular direction perpendicular to the surface of the sensor tip. This arrangement defines relatively wider distance in the perpendicular direction on the sensor tip.Type: GrantFiled: September 25, 2002Date of Patent: September 7, 2004Assignee: Denso CorporationInventors: Koichi Goto, Yukihiro Takeuchi, Takao Iwaki, Yasushi Goka
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Patent number: 6753201Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: GrantFiled: May 28, 2002Date of Patent: June 22, 2004Assignee: Denso CorporationInventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Publication number: 20040093946Abstract: A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.Type: ApplicationFiled: November 10, 2003Publication date: May 20, 2004Inventors: Kazuhiko Kano, Tetsuo Yoshioka, Takao Iwaki, Yukihiro Takeuchi
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Publication number: 20040094814Abstract: A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.Type: ApplicationFiled: November 10, 2003Publication date: May 20, 2004Inventors: Tetsuo Yoshioka, Yukihiro Takeuchi, Kazuhiko Kano
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Patent number: 6701782Abstract: A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.Type: GrantFiled: July 22, 2002Date of Patent: March 9, 2004Assignee: Denso CorporationInventors: Takao Iwaki, Toshimasa Yamamoto, Hiroyuki Wado, Yukihiro Takeuchi