Abstract: In a mirror driving apparatus, a pair of beam portions includes: a pair of first beams directly adjacent to a reflector to sandwich the reflector between the first beams; and a pair of second beams each coupled to one side of a corresponding one of the first beams, the one side being opposite to the reflector with respect to the corresponding one of the first beams. A plurality of electrodes are spaced from each other on a main surface of each of the first beams, a piezoelectric material being interposed between the main surface and the plurality of electrodes. The first beams are displaceable crosswise to the main surface in respective directions opposite to each other. The pair of second beams is displaceable in a direction connecting the first beams and the second beams, along the main surface of the second beams.

Abstract: In a mirror driving apparatus, a pair of beam portions includes: a pair of first beams directly adjacent to a reflector to sandwich the reflector between the first beams; and a pair of second beams each coupled to one side of a corresponding one of the first beams, the one side being opposite to the reflector with respect to the corresponding one of the first beams. A plurality of electrodes are spaced from each other on a main surface of each of the first beams, a piezoelectric material being interposed between the main surface and the plurality of electrodes. The first beams are displaceable crosswise to the main surface in respective directions opposite to each other. The pair of second beams is displaceable in a direction connecting the first beams and the second beams, along the main surface of the second beams.

Abstract: Each of a plurality of ceramic substrate members includes a via reaching an other main surface from one main surface. A gap is formed in each of first and second ceramic substrate members of the plurality of stacked ceramic substrate members to penetrate each of the first and second ceramic substrate members, the first ceramic substrate member being arranged at an outermost surface on one side in a stacking direction of the ceramic substrate members, the second ceramic substrate member being arranged at an outermost surface on the other side opposite to the one side in the stacking direction. At least a portion of a side surface and a bottom surface within the gap are covered with a protection layer. The protection layer is made of a material having an etching rate lower than that of the ceramic substrate members.

Abstract: An antenna device includes a ground conductor (1), a dielectric tube (2) containing an ionizing gas and passing through the ground conductor, whose folded-back portion (201) and both ends are disposed in different sides of the ground conductor, first electrodes (3, 4) disposed at both ends of the dielectric tube (2), a plasma excitation power supply connected to the first electrodes, bringing the ionizing gas into a plasma state; a second electrode (6) ring-shaped and disposed at the both ends side of dielectric tube (2) from the ground conductor (1), fitted to and in contact with the dielectric tube outer surface, a high frequency transmitter (7) supplying a high frequency signal to the second electrode (6), and a feed line (8) connecting the second electrode and the high frequency transmitter. Each end of the dielectric tube (2) is larger than the second electrode in the inner diameter.

Abstract: Each of a plurality of ceramic substrate members includes a via reaching an other main surface from one main surface. A gap is formed in each of first and second ceramic substrate members of the plurality of stacked ceramic substrate members to penetrate each of the first and second ceramic substrate members, the first ceramic substrate member being arranged at an outermost surface on one side in a stacking direction of the ceramic substrate members, the second ceramic substrate member being arranged at an outermost surface on the other side opposite to the one side in the stacking direction. At least a portion of a side surface and a bottom surface within the gap are covered with a protection layer. The protection layer is made of a material having an etching rate lower than that of the ceramic substrate members.

Abstract: An antenna device includes a ground conductor (1), a dielectric tube (2) containing an ionizing gas and passing through the ground conductor, whose folded-back portion (201) and both ends are disposed in different sides of the ground conductor, first electrodes (3, 4) disposed at both ends of the dielectric tube (2), a plasma excitation power supply connected to the first electrodes, bringing the ionizing gas into a plasma state; a second electrode (6) ring-shaped and disposed at the both ends side of dielectric tube (2) from the ground conductor (1), fitted to and in contact with the dielectric tube outer surface, a high frequency transmitter (7) supplying a high frequency signal to the second electrode (6), and a feed line (8) connecting the second electrode and the high frequency transmitter. Each end of the dielectric tube (2) is larger than the second electrode in the inner diameter.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: An atmospheric pressure plasma treatment apparatus includes a moving unit configured to relatively move an atmospheric pressure plasma treatment head and member to be treated, gas supply units configured to supply a reaction gas and a curtain gas, and a control unit. When the atmospheric pressure plasma treatment head and the member are relatively moved, the control unit performs control to increase a flow rate of the reaction gas and the curtain gas from an opposite direction side of a relative moving direction of the member with respect to the atmospheric pressure plasma treatment head and reduce a flow rate of the reaction gas and the curtain gas in the relative moving direction side of the member compared with the flow rates of the reaction gas and the curtain gas flowing when the atmospheric pressure plasma treatment head and the member are not relatively moved.

Abstract: In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

Abstract: A plasma generating apparatus irradiates plasma on a treatment object. The plasma is generated under gas pressure equal to or higher than 100 pascals and equal to or lower than atmospheric pressure in an inter-electrode gap between a first electrode to which a power supply is connected and a second electrode arranged to be opposed to the first electrode and grounded. The first electrode has a structure in which the first electrode is retained on a grounded conductive retaining member via a solid dielectric provided on a surface not opposed to the second electrode, and a conductive film is continuously provided on a surface in a predetermined range in contact with the conductive retaining member and a surface in a predetermined range not in contact with the conductive retaining member on a surface of the solid dielectric.

Abstract: There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.

Abstract: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Abstract: A comb-teeth electrode, a frame electrode, and an inter-electrode wire are formed on a first major surface of a substrate made of a ferroelectric material. A back-face electrode is formed on a second major surface of the substrate. A periodically-poled structure is formed by applying a voltage between the frame electrode and the back-face electrode. A region equivalent to the periodically-poled structure is cut from the substrate thereby fabricating an optical functional element. The inter-electrode wire is formed on an insulating layer that is formed on the substrate.

Abstract: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Abstract: A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state.

Abstract: Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Abstract: A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit.

Abstract: There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.