Abstract: A non-contact transport apparatus comprises a top plate with a supply port for supplying air thereto, a diffuser plate having a plurality of discharge holes for discharging air, and a sheet-shaped nozzle plate interposed between the top plate and the diffuser plate and having a plurality of nozzles therein. The top plate, the nozzle plate and the diffuser plate are stacked and integrally connected to one another through a plurality of connecting bolts. Air is supplied from the supply port and via flow passages to the plurality of nozzles. Air is directed to the outside from the plurality of discharge holes, via radially formed nozzles oriented in a radially outward direction.

Abstract: A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Abstract: A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other.

Abstract: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space sand between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Abstract: A first narrow rectangular groove having a rectangular cross section and a second narrow rectangular groove substantially orthogonal to the first narrow rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third narrow rectangular groove located at a position facing the first narrow rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second narrow rectangular groove, so that the frequency conversion device is located where the first and second narrow rectangular grooves are orthogonal to each other.

Abstract: A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.

Abstract: An inertia force sensor with a damper. The damper includes a cantilever for a movable part disposed in a movable electrode protruding therefrom, and a cantilever for a fixed part disposed in a support portion for the movable part or a support portion for the fixed part and protruding therefrom. The damper allows the cantilever for the movable part and the cantilever for the fixed part to contact each other before the movable electrode contacts the support portion for the movable part and the support portion for the fixed part. As a result, it is possible to prevent a stopper from being damaged and to improve the reliability of the sensor.

Abstract: An inertia force sensor of the invention is provided with a damper portion. The damper portion includes a cantilever for a movable part disposed in a movable electrode portion so as to protrude therefrom and a cantilever for a fixed part disposed in a support portion for the movable part or a support portion for the fixed part so as to protrude therefrom. The damper portion is formed so that the cantilever for the movable part and the cantilever for the fixed part contact each other before the movable electrode portion contacts the support portion for the movable part and the support portion for the fixed part. As a result, it is possible to prevent a stopper portion from being damaged and improve the reliability of the sensor.

Abstract: In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate having a recessed portion is formed in a surface of the substrate, a first interconnecting conductor is formed on the substrate including at least the recessed portion of the substrate, and a dielectric support film is formed on the substrate above the recessed portion of the substrate with an air space sandwiched between the dielectric support film and the substrate. A second interconnecting conductor is formed on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and a reduced transmission loss and capable of being made by a simple manufacturing process.

Abstract: A silicon device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The silicon device also includes a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and formed on the surface of the insulating substrate at least in a portion right below the cantilever. The conductive film prevents the insulating substrate from being charged thereby significantly suppressing the damage caused on the beam-like structure during dry etching.

Abstract: A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur.

Abstract: A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is su

Abstract: A method of manufacturing YBCO superconducting thin films is obtained which is capable of providing superconducting thin films having excellent crystallinity in a high yield by introducing a new film formation parameter in a hybrid plasma sputtering method. When a Y--Ba--Cu--O type superconducting thin film is formed by using a parallel plate sputtering method, a high-frequency voltage generated by a high-frequency power source is superimposed on a DC voltage generated by a DC power source and applied to the cathode electrode at the same time, an electrically conductive YBCO target is placed on the cathode, and the film formation conditions are controlled on the basis of the difference between the voltage drops in each ion sheath formed on the substrate and directly on the target by applying a DC voltage to a substrate holder from the DC power source.