Abstract: An image forming apparatus that includes an image bearing member to bear a latent electrostatic image, a charging device to charge a surface of the image bearing member, an irradiating device to irradiate the surface of the image bearing member to form the latent electrostatic image thereon, a developing device to develop the latent electrostatic image, an optional cleaning unit to clean the surface of the image bearing member, a transfer device to transfer the developed image to an opaque medium, an optional cleaning device to clean a surface of the transfer device, a fixing device to fix the transferred image on the opaque medium, and an attachment device to attach the fixed image to a transparent medium after the opaque medium is overlaid with the transparent medium, and recording media for use in the image forming apparatus.

Abstract: In an image forming apparatus including an image forming unit that forms an image on a recording medium conveyed from a sheet feeding unit to obtain an image with photographic quality, at least a part of the recording medium has a transparent portion. When an image obtained by reversing an original image is transferred onto the transparent part, sheet-delivery rollers are operable in a direction in which a pressure onto the recording medium is reduced immediately after fixing of the image.

Abstract: A pair of registration rollers align a leading edge of a recording medium having a transparent section and a non-transparent section. A boundary sensor detects a boundary between the transparent section and the non-transparent section. The boundary sensor is provided on a downstream side of a direction of conveying the recording medium by the registration rollers.

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

Abstract: A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm?3 to 5×1019 cm?3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

Abstract: A charger charges a body with a voltage in which an AC voltage is superimposed on a DC voltage. The charger and the body have a small gap therebetween. A sensor measures a humidity in the gap between the charger and the body. A magnitude of the AC voltage to be superimposed on the DC voltage is determined based on the humidity detected.

Abstract: A charge roller that includes a metal core, an elastic member configured wrapped around the metal core, and film members is disclosed. Each of the film members is wrapped around each end of the elastic member in a circumferential direction of the metal core such that at least a part of each of the film members exists at every position around the ends of the elastic member in an axial direction of the metal core. Portions of the film members do not overlap each other in an radial direction of the metal core.

Abstract: A charge roller that includes a metal core, an elastic member configured wrapped around the metal core, and film members is disclosed. Each of the film members is wrapped around each end of the elastic member in a circumferential direction of the metal core such that at least a part of each of the film members exists at every position around the ends of the elastic member in an axial direction of the metal core. Portions of the film members do not overlap each other in an radial direction of the metal core.

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

Abstract: The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.

Abstract: A cleaning device including a brush roller that contacts the surface of a charge roller for cleaning it and an image forming apparatus including the cleaning device are disclosed. The brush roller has a brush contacting the charge roller due to the weight of the brush roller. The brush roller rotates by following the rotation of the charge roller. The cleaning device has a simple configuration while the brush roller has high durability.

Abstract: In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

Abstract: A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.

Abstract: A fixing device including a rotatable fixing member, a first heating device configured to heat the rotatable fixing member, a rotatable pressing member positioned in press-contact with the rotatable fixing member and forming a fixing region through which a sheet-like recording medium having an unfixed image thereon passes to fix the unfixed image by heat and pressure, and a controller configured to turn off the first heating device for a first predetermined time before a trailing edge of a last sheet-like recording medium in a series of a job passes through the fixing region.

Abstract: A charging device, an image forming apparatus including the charging device, an image carrier unit including the charging device and a charging roller, which faces a body to be charged and is applied with a voltage, are disclosed. The charging roller includes a metallic core and an elastic member covering the core. Films are respectively wrapped around and adhered to the opposite end portions of the elastic member. Springs press the charging roller toward a body to be charged, causing the elastic member to deform due to compression. The maximum deformation of the films, which deform along the outer periphery of the elastic member, is selected to be smaller than the thickness of each film in the radial direction of the charge roller. A gap is therefore formed between the elastic member and the body to be charged. This prevents the portion of the elastic member, which corresponds to an image forming region, other than opposite end portions from contacting the surface of the body to be charged.

Abstract: A cleaning device of the present invention includes a brush roller having a brush held in contact with the surface of a body to be cleaned. The brush contacts the surface of the body to be cleaned due to the weight of the brush roller and rotates by following the movement of the above surface. A flicker is held in contact with the brush in order to remove toner deposited on the brush. A casing forms a chamber therein for storing the toner removed by the flicker. The brush roller maintains an expected cleaning ability even when impurities deposited on the brush absorb moisture in a high-humidity environment and cannot be easily removed or when a great amount of toner deposits on the brush at a time.

Abstract: A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating the semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.

Abstract: A charger charges a body with a voltage in which an AC voltage is superimposed on a DC voltage. The charger and the body have a small gap therebetween. A sensor measures a humidity in the gap between the charger and the body. A magnitude of the AC voltage to be superimposed on the DC voltage is determined based on the humidity detected.

Abstract: A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.

Abstract: In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process comprises the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the-surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).