Abstract: Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

Abstract: A charge roller that includes a metal core, an elastic member configured wrapped around the metal core, and film members is disclosed. Each of the film members is wrapped around each end of the elastic member in a circumferential direction of the metal core such that at least a part of each of the film members exists at every position around the ends of the elastic member in an axial direction of the metal core. Portions of the film members do not overlap each other in an radial direction of the metal core.

Abstract: A charging device, an image forming apparatus including the charging device, an image carrier unit including the charging device and a charging roller, which faces a body to be charged and is applied with a voltage, are disclosed. The charging roller includes a metallic core and an elastic member covering the core. Films are respectively wrapped around and adhered to the opposite end portions of the elastic member. Springs press the charging roller toward a body to be charged, causing the elastic member to deform due to compression. The maximum deformation of the films, which deform along the outer periphery of the elastic member, is selected to be smaller than the thickness of each film in the radial direction of the charge roller. A gap is therefore formed between the elastic member and the body to be charged. This prevents the portion of the elastic member, which corresponds to an image forming region, other than opposite end portions from contacting the surface of the body to be charged.

Abstract: Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

Abstract: A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

Abstract: A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.

Abstract: A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure, it is possible to simplify the formation of a bypass diode and therefore provide a solar cell module with high reliability at a low cost.

Abstract: A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

Abstract: A photovoltaic cell in accordance with the present invention includes at least a metal layer, a semiconductive layer and a transparent electrode formed on a substrate. The metal layer is composed of a metal mainly containing aluminum; and has an x-ray diffraction pattern in which a (111) peak intensity is enhanced to at least 2.1 times a (200) peak intensity, at least 4.4 times a (220) peak intensity and at least 4.1 times a (311) peak intensity. The metal layer essentially consists of an aluminum-titanium alloy or an aluminum-magnesium alloy. An interlayer may be provided between the metal layer and the substrate.

Abstract: A charging or image transfer unit for use in an image formation process including the steps of charging, image formation exposure, image development, image transfer, image fixing and cleaning, for applying an electric field to the surface of an electrophotographic photoconductor by coming into contact therewith, and also for controlling surface properties of the electrophotographic photo-conductor. The unit includes an electric field application member applying the electric field to the surface of the electrophotographic photoconductor and a lubricity-imparting member for controlling a friction coefficient of the surface of the electrophotographic photoconductor wherein the electric field application member includes an electrophotoconductive material and a lubricity-imparting member includes a fluoroplastic material.

Abstract: A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.

Abstract: There are provided a method which, in forming a transparent conductive film by sputtering on a semiconductor junction layer provided on a conductive substrate which bears at least the transparent conductive film thereon, comprises steps of electrically insulating the conductive substrate, and maintaining the self bias voltage Vself of the conductive substrate within a range of -50 V.ltoreq.Vself<0 V, and an apparatus therefor. There can also be reduced the damage to the semiconductor layer, induced by the cations such as Ar.sup.+. Thus there can be produced the photovoltaic elements of a high open-circuit voltage and a high photoelectric conversion efficiency in stable manner.

Abstract: An image forming apparatus capable of adequately adjusting the amount of a low friction agent to be applied to the surface of a photoconductive element in accordance with image quality is disclosed. After preselected initialization, an electrophotographic image forming section records a usual image or a particular image for evaluation on a paper. A toner image formed on the photoconductive element and a toner image transferred from the element to a paper are read. Image data representative of such toner images and the initial image data are compared to see if the read images are defective or not. The low friction agent is applied to the photoconductive element in an amount controlled on the basis of the result of the decision.

Abstract: By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.

Abstract: A photovoltaic device comprises a photovoltaic layer, a transparent electrode layer provided on the photovoltaic layer in close contact, and a transparent protective layer further provided in contact therewith, wherein the transparent electrode layer comprises Zn.sub.2 In.sub.2 O.sub.5. This photovoltaic device can prevent reflection of light and improves conversion efficiency.

Abstract: A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.

Abstract: A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.

Abstract: To efficiently mass-produce back reflectors which are inexpensive and have high reflectivity, the invention provides a manufacturing method for a solar cell comprising at least a metal layer having a texture structure and high reflectivity, a transparent layer, a semiconductor layer, and a transparent electrode which are formed on a substrate, wherein the metal layer consists of at least two layers formed as a first metal layer and a second metal layer. The method includes a step of, after forming the first metal layer, annealing the first metal layer before forming the second metal layer. The invention also provides a solar cell manufacturing apparatus having, upstream of a second metal layer forming chamber, a heating chamber in which the first metal layer can be annealed.

Abstract: In an image forming apparatus, a toner collection mode is executed when a series of image formation modes ends and when the image formation mode is continuously repeated a preselected number of times. A toner image sensing mode for sensing a reflection density from a reference toner image is executed every time the image formation mode is repeated a preselected number of times. The apparatus is capable of surely and efficiently removing toner left on an image carrier after image transfer, and collecting the reference toner image with a developing unit. The reference toner image is prevented from contaminating an image transferring unit and a cleaning unit.

Abstract: In an image forming apparatus, during the course of recording, a cleaning roller is rotated together with an image carrier. The roller frictionally charges toner left on the image carrier after image transfer to the same polarity. A cleaning member electrostatically collects the charged toner. At the same time, a voltage is applied to the cleaning member by a voltage applying device in order to cause it to attract the charged toner, thereby cleaning the image carrier. Hence, even when the toner remaining on image carrier is charged partly to the positive polarity and partly to the negative polarity, the toner can be entirely transferred to the cleaning member by a simple construction.