Abstract: Exhaust pressure in an exhaust system 15 that evacuates a processing furnace 2 is determined as absolute pressure by using a differential manometer 23, which measures the exhaust pressure as differential pressure, and a barometer, which measures atmospheric pressure as absolute pressure. An opening of a pressure regulating valve 25 is adjusted based on the absolute exhaust pressure thus determined so that pressure in the processing furnace 2 is regulated.

Abstract: A film-forming unit of the invention includes: a processing furnace, gas-supplying means that supplies a process gas into the processing furnace, heating means that heats an inside of the processing furnace to a predetermined process-temperature, and a normal-pressure gas-discharging system for discharging gas from the processing furnace at a predetermined discharging-pressure that is near to an atmospheric pressure. A valve is provided in the normal-pressure gas-discharging system, the valve being adjustably caused to open and close, a pressure of the gas through the valve being also adjustable. A pressure sensor detects a discharging-pressure in the normal-pressure gas-discharging system. A controller controls the valve based on the pressure detected by the pressure sensor. According to the feature, a stable control can be achieved without necessity of introducing atmospheric air or introducing any inert gas.

Abstract: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A member for a semiconductor manufacturing apparatus comprises a steel substrate and a composite oxide film formed on a surface thereof and comprised of silicon oxide-aluminum oxide-chromium oxide and a sintering aid.

Abstract: Exhaust pressure in an exhaust system 15 that evacuates a processing furnace 2 is determined as absolute pressure by using a differential manometer 23, which measures the exhaust pressure as differential pressure, and a barometer, which measures atmospheric pressure as absolute pressure. An opening of a pressure regulating valve 25 is adjusted based on the absolute exhaust pressure thus determined so that pressure in the processing furnace 2 is regulated.

Abstract: A thermal processing unit of the invention includes a processing container that can contain an object to be processed therein, the processing container having a lower end provided with an opening. The opening is opened and closed by a lid. A flange is provided at a peripheral portion of the opening, and a gas-supplying unit is provided at the flange for supplying a gas into the processing container. A heating mechanism can heat the object to be processed contained in the processing container.

Abstract: A thermal processing unit according to the invention includes: a processing furnace; gas-supplying means that supplies a process gas into the processing furnace; heating means that heats an inside of the processing furnace to a predetermined process-temperature; a normal-pressure gas-discharging system for discharging gas from the processing furnace at a predetermined discharging-pressure that is near to an atmospheric pressure; a valve provided in the normal-pressure gas-discharging system, the valve being adjustably caused to open and close, a pressure of the gas through the valve being also adjustable; a pressure sensor that detects a discharging-pressure in the normal-pressure gas-discharging system; and a controller that controls the valve based on the pressure detected by the pressure sensor. In the pressure sensor, a gas-contact surface that may come in contact with the discharged gas is made of a corrosion-resistant material that is not metal.

Abstract: A member for a semiconductor manufacturing apparatus comprises a steel substrate and a composite oxide film formed on a surface thereof and comprised of silicon oxide-aluminum oxide-chromium oxide and a sintering aid.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer on which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipes. The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A semiconductor wafer is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer on which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipes. The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A thermal processing unit of the invention includes a processing container that can contain an object to be processed therein, the processing container having a lower end provided with an opening. The opening is opened and closed by a lid. A flange is provided at a peripheral portion of the opening, and a gas-supplying unit is provided at the flange for supplying a gas into the processing container. A heating mechanism can heat the object to be processed contained in the processing container.

Abstract: In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.

Abstract: A silicon nitride (Si.sub.3 N.sub.4) film and a silicon oxide (SiO.sub.2) film, for example, are successively formed on the surface of semiconductor wafers by the same thermal processing system 3, to form a multilayer insulating structure. A disk trap 5, a valve MV and a water cooled trap 6 are provided in this order in an exhaust gas passage 41 extending from a thermal processing unit 3. A heater 44 is provided to heat the section of the passage 41 upstream of the water-cooled trap 6 as well as the valve MV. Another heater 51 is provided to heat the disk trap 5. A film of Si.sub.3 N.sub.4 is formed on the wafer surface by heating the section of the passage upstream of the water-cooled trap and by heating the disk trap and the valve while cooling the water-cooled trap, to thereby trap a by-product of NH.sub.4 Cl. A film of SiO.sub.2 is then formed on the film of Si.sub.3 O.sub.4 by heating the section of the exhaust passage upstream of the disk trap 5 to trap a by-product of C.sub.x H.sub.y in the disk trap.