Abstract: There is provided a radiological image detection apparatus having excellent sensitivity. A scintillator has a plurality of columnar crystals formed of thallium-activated cesium iodide, and converts X-rays into visible light and emits the visible light from the distal end of the columnar crystal. A photoelectric conversion panel generates electric charges by detecting the visible light emitted from the scintillator. The molar ratio of thallium to cesium iodide in the scintillator is in a range of 0.1 mol % to 0.55 mol %. The half width of the rocking curve of the (200) plane of the columnar crystal is equal to or less than 3°.

Abstract: There is provided a vacuum film deposition apparatus which forms a film on a substrate by a vacuum film deposition technique, include: substrate holding means for holding the substrate; a deposition preventing member for preventing film deposition at undesired positions within the apparatus; and contacting means for bringing the substrate or the substrate holding means and the deposition preventing member into contact with each other.

Abstract: An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.

Abstract: An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

Abstract: An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

Abstract: There is provided a vacuum film deposition apparatus which forms a film on a substrate by a vacuum film deposition technique, include: substrate holding means for holding the substrate; a deposition preventing member for preventing film deposition at undesired positions within the apparatus; and contacting means for bringing the substrate or the substrate holding means and the deposition preventing member into contact with each other.

Abstract: Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.

Abstract: On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1?p?qN (0?p?1, 0?y?q). A GaN-based semiconductor layer group is formed on the buffer layer.

Abstract: A substrate 6 is provided over at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 in an atmosphere containing gaseous raw material including a carbon source to generate discharge plasma so that a thin film 7 is formed on the substrate 6. The applied pulse voltage includes positive pulse and negative pulses. The positive pulse has a pulse half value width of 1000 nsec or shorter and said negative pulse has a pulse half value width of 1000 nsec or shorter.

Abstract: A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

Abstract: A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

Abstract: A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

Abstract: An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20b of a substrate 20 facing a space 23 formed in the substrate 20. The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20b.

Abstract: An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.

Abstract: An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.

Abstract: A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1×108/cm2 or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.

Abstract: In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.

Abstract: A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

Abstract: A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

Abstract: A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.